| Monolithic integration of AlGaN/GaN HEMT on LED by MOCVD ZJ Liu, T Huang, J Ma, C Liu, KM Lau IEEE Electron Device Letters 35 (3), 330-332, 2014 | 118 | 2014 |
| High Performance Tri-Gate GaN Power MOSHEMTs on Silicon Substrate J Ma, E Matioli IEEE Electron Device Letters 38 (3), 367-370, 2017 | 87 | 2017 |
| Slanted Tri-Gates for High-Voltage GaN Power Devices J Ma, E Matioli IEEE Electron Device Letters 38 (9), 1305-1308, 2017 | 75 | 2017 |
| Multi-channel nanowire devices for efficient power conversion L Nela, J Ma, C Erine, P Xiang, TH Shen, V Tileli, T Wang, K Cheng, ... Nature Electronics 4 (4), 284-290, 2021 | 74 | 2021 |
| Metal-interconnection-free integration of InGaN/GaN light emitting diodes with AlGaN/GaN high electron mobility transistors C Liu, Y Cai, Z Liu, J Ma, KM Lau Applied Physics Letters 106 (18), 2015 | 71 | 2015 |
| Multi-channel tri-gate normally-on/off AlGaN/GaN MOSHEMTs on Si substrate with high breakdown voltage and low ON-resistance J Ma, C Erine, P Xiang, K Cheng, E Matioli Applied Physics Letters 113 (24), 2018 | 65 | 2018 |
| Multi-channel tri-gate GaN power Schottky diodes with low ON-resistance J Ma, G Kampitsis, P Xiang, K Cheng, E Matioli IEEE Electron Device Letters 40 (2), 275-278, 2018 | 57 | 2018 |
| Selective epitaxial growth of monolithically integrated GaN-based light emitting diodes with AlGaN/GaN driving transistors Z Liu, J Ma, T Huang, C Liu, K May Lau Applied Physics Letters 104 (9), 2014 | 56 | 2014 |
| 2 kV slanted tri-gate GaN-on-Si Schottky barrier diodes with ultra-low leakage current J Ma, E Matioli Applied Physics Letters 112, 052101, 2018 | 55 | 2018 |
| High-Voltage and Low-Leakage AlGaN/GaN Tri-Anode Schottky Diodes With Integrated Tri-Gate Transistors J Ma, E Matioli IEEE Electron Device Letters 38 (1), 83-86, 2016 | 53 | 2016 |
| Improved GaN-based LED grown on silicon (111) substrates using stress/dislocation-engineered interlayers J Ma, X Zhu, KM Wong, X Zou, KM Lau Journal of crystal growth 370, 265-268, 2013 | 51 | 2013 |
| Low trap states in in situ SiNx/AlN/GaN metal-insulator-semiconductor structures grown by metal-organic chemical vapor deposition X Lu, J Ma, H Jiang, C Liu, KM Lau Applied Physics Letters 105 (10), 2014 | 47 | 2014 |
| 900 V Reverse-Blocking GaN-on-Si MOSHEMTs with a Hybrid Tri-anode Schottky Drain J Ma, M Zhu, E Matioli IEEE Electron Device Letters 38 (12), 1704-1707, 2017 | 40 | 2017 |
| DC and RF performance of gate-last AlN/GaN MOSHEMTs on Si with regrown source/drain T Huang, ZJ Liu, X Zhu, J Ma, X Lu, KM Lau IEEE Transactions on Electron Devices 60 (10), 3019-3024, 2013 | 40 | 2013 |
| High-voltage normally-off recessed tri-gate GaN power MOSFETs with low on-resistance M Zhu, J Ma, L Nela, C Erine, E Matioli IEEE Electron Device Letters 40 (8), 1289-1292, 2019 | 39 | 2019 |
| Ultra-compact, high-frequency power integrated circuits based on GaN-on-Si Schottky barrier diodes L Nela, R Van Erp, G Kampitsis, HK Yildirim, J Ma, E Matioli IEEE Transactions on Power Electronics 36 (2), 1269-1273, 2020 | 38 | 2020 |
| High-performance nanowire-based E-mode power GaN MOSHEMTs with large work-function gate metal L Nela, M Zhu, J Ma, E Matioli IEEE Electron Device Letters 40 (3), 439-442, 2019 | 35 | 2019 |
| Field Plate Design for Low Leakage Current in Lateral GaN Power Schottky Diodes: Role of the Pinch-off Voltage J Ma, D Zanuz, E Matioli IEEE Electron Device Letters 38 (9), 1298-1301, 2017 | 35 | 2017 |
| 1200 V multi-channel power devices with 2.8 Ω• mm ON-resistance J Ma, C Erine, M Zhu, N Luca, P Xiang, K Cheng, E Matioli 2019 IEEE International Electron Devices Meeting (IEDM), 4.1. 1-4.1. 4, 2019 | 34 | 2019 |
| Impact of fin width on tri-gate GaN MOSHEMTs J Ma, G Santoruvo, L Nela, T Wang, E Matioli IEEE Transactions on Electron Devices 66 (9), 4068-4074, 2019 | 32 | 2019 |
Elison MatioliEcole Polytechnique Fédérale de Lausanne (EPFL)Bestätigte E-Mail-Adresse bei epfl.ch