| Methods of forming a semiconductor device with low-k spacers and the resulting device X Cai, R Xie, X Zhang US Patent 9,064,948, 2015 | 515 | 2015 |
| Integrated circuits and methods for fabricating integrated circuits with reduced parasitic capacitance R Xie, X Cai, X Zhang US Patent 9,190,486, 2015 | 483 | 2015 |
| Uniformity tuning of variable-height features formed in trenches R Xie US Patent 10,332,963, 2019 | 289 | 2019 |
| Silicide protection during contact metallization and resulting semiconductor structures VK Kamineni, R Xie, R Miller US Patent 9,111,907, 2015 | 204 | 2015 |
| A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels R Xie, P Montanini, K Akarvardar, N Tripathi, B Haran, S Johnson, T Hook, ... 2016 IEEE international electron devices meeting (IEDM), 2.7. 1-2.7. 4, 2016 | 194 | 2016 |
| Multi-channel gate-all-around FET Q Liu, R Xie, CC Yeh, X Cai US Patent 9,502,518, 2016 | 184 | 2016 |
| Scaling challenges for advanced CMOS devices AP Jacob, R Xie, MG Sung, L Liebmann, RTP Lee, B Taylor International Journal of High Speed Electronics and Systems 26 (01n02), 1740001, 2017 | 142 | 2017 |
| Integrated circuits including FINFET devices with lower contact resistance and reduced parasitic capacitance and methods for fabricating the same X Cai, R Xie, A Khakifirooz, K Cheng US Patent 8,921,191, 2014 | 141 | 2014 |
| Directed self-assembly of block copolymers for 7 nanometre FinFET technology and beyond CC Liu, E Franke, Y Mignot, R Xie, CW Yeung, J Zhang, C Chi, C Zhang, ... Nature Electronics 1 (10), 562-569, 2018 | 120 | 2018 |
| Methods of forming single and double diffusion breaks on integrated circuit products comprised of FinFET devices and the resulting products R Xie, KY Lim, MG Sung, RRH Kim US Patent 9,412,616, 2016 | 117 | 2016 |
| FinFET semiconductor devices with improved source/drain resistance and methods of making same R Xie, M Raymond, R Miller US Patent 9,147,765, 2015 | 116 | 2015 |
| A 10nm platform technology for low power and high performance application featuring FINFET devices with multi workfunction gate stack on bulk and SOI KI Seo, B Haran, D Gupta, D Guo, T Standaert, R Xie, H Shang, E Alptekin, ... 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical …, 2014 | 112 | 2014 |
| Effects of sulfur passivation on germanium MOS capacitors with HfON gate dielectric R Xie, C Zhu IEEE electron device letters 28 (11), 976-979, 2007 | 101 | 2007 |
| High-k gate stack on germanium substrate with fluorine incorporation R Xie, M Yu, MY Lai, L Chan, C Zhu Applied physics letters 92 (16), 2008 | 100 | 2008 |
| Methods of Forming Replacement Gate Structures for Semiconductor Devices R Xie, X Cai, R Miller, A Knorr US Patent App. 13/354,844, 2013 | 92 | 2013 |
| Methods of forming nanosheet transistor with dielectric isolation of source-drain regions and related structure J Frougier, MG Sung, R Xie, C Park, S Bentley US Patent 9,947,804, 2018 | 84 | 2018 |
| Defect-free strain relaxed buffer layer P Morin, K Cheng, J Fronheiser, X Cai, J Li, S Mochizuki, R Xie, H He, ... US Patent App. 14/588,221, 2016 | 84 | 2016 |
| Methods of forming diffusion breaks on integrated circuit products comprised of FinFET devices and the resulting products R Xie, MG Sung, RRH Kim, KY Lim, C Park US Patent 9,362,181, 2016 | 82 | 2016 |
| Full bottom dielectric isolation to enable stacked nanosheet transistor for low power and high performance applications J Zhang, J Frougier, A Greene, X Miao, L Yu, R Vega, P Montanini, ... 2019 IEEE International Electron Devices Meeting (IEDM), 11.6. 1-11.6. 4, 2019 | 81 | 2019 |
| Methods of forming replacement gate structures for transistors and the resulting devices R Xie, K Choi, SC Fan, S Ponoth US Patent 9,257,348, 2016 | 81 | 2016 |
Julien FrougierIBM ResearchBestätigte E-Mail-Adresse bei ibm.com