From large‐size to micro‐LEDs: scaling trends revealed by modeling SS Konoplev, KA Bulashevich, SY Karpov physica status solidi (a) 215 (10), 1700508, 2018 | 156 | 2018 |
Impact of surface recombination on efficiency of III‐nitride light‐emitting diodes KA Bulashevich, SY Karpov physica status solidi (RRL)–Rapid Research Letters 10 (6), 480-484, 2016 | 154 | 2016 |
Is Auger recombination responsible for the efficiency rollover in III‐nitride light‐emitting diodes? KA Bulashevich, SY Karpov physica status solidi c 5 (6), 2066-2069, 2008 | 150 | 2008 |
Simulation of visible and ultra-violet group-III nitride light emitting diodes KA Bulashevich, VF Mymrin, SY Karpov, IA Zhmakin, AI Zhmakin Journal of Computational Physics 213 (1), 214-238, 2006 | 86 | 2006 |
Modelling study of MQW LED operation VF Mymrin, KA Bulashevich, NI Podolskaya, IA Zhmakin, SY Karpov, ... physica status solidi (c) 2 (7), 2928-2931, 2005 | 73 | 2005 |
Efficiency droop suppression in InGaN‐based blue LEDs: Experiment and numerical modelling DA Zakheim, AS Pavluchenko, DA Bauman, KA Bulashevich, ... physica status solidi (a) 209 (3), 456-460, 2012 | 71 | 2012 |
Nanotube devices: a microscopic model KA Bulashevich, SV Rotkin Journal of Experimental and Theoretical Physics Letters 75, 205-209, 2002 | 66 | 2002 |
Optimal ways of colour mixing for high‐quality white‐light LED sources KA Bulashevich, AV Kulik, SY Karpov physica status solidi (a) 212 (5), 914-919, 2015 | 61 | 2015 |
Current spreading and thermal effects in blue LED dice KA Bulashevich, IY Evstratov, VF Mymrin, SY Karpov physica status solidi c 4 (1), 45-48, 2007 | 58 | 2007 |
Effect of die shape and size on performance of III-nitride micro-LEDs: A modeling study KA Bulashevich, SS Konoplev, SY Karpov Photonics 5 (4), 41, 2018 | 54 | 2018 |
Coupled modeling of current spreading, thermal effects and light extraction in III-nitride light-emitting diodes MV Bogdanov, KA Bulashevich, IY Evstratov, AI Zhmakin, SY Karpov Semiconductor Science and Technology 23 (12), 125023, 2008 | 51 | 2008 |
Effect of free-carrier absorption on performance of 808 nm AlGaAs-based high-power laser diodes KA Bulashevich, VF Mymrin, SY Karpov, DM Demidov, ... Semiconductor science and technology 22 (5), 502, 2007 | 50 | 2007 |
Simulation of light-emitting diodes for new physics understanding and device design KA Bulashevich, OV Khokhlev, IY Evstratov, SY Karpov Light-Emitting Diodes: Materials, Devices, and Applications for Solid State …, 2012 | 41 | 2012 |
Bandgap engineering of electronic and optoelectronic devices on native AlN and GaN substrates: a modelling insight VF Mymrin, KA Bulashevich, NI Podolskaya, SY Karpov Journal of crystal growth 281 (1), 115-124, 2005 | 39 | 2005 |
Experimental and theoretical study of electrical, thermal, and optical characteristics of InGaN/GaN high‐power flip‐chip LEDs AE Chernyakov, KA Bulashevich, SY Karpov, AL Zakgeim physica status solidi (a) 210 (3), 466-469, 2013 | 38 | 2013 |
Current crowding effect on light extraction efficiency of thin‐film LEDs MV Bogdanov, KA Bulashevich, OV Khokhlev, IY Evstratov, MS Ramm, ... physica status solidi c 7 (7‐8), 2124-2126, 2010 | 38 | 2010 |
Analytical model for the quantum‐confined Stark effect including electric field screening by non‐equilibrium carriers KA Bulashevich, SY Karpov, RA Suris physica status solidi (b) 243 (7), 1625-1629, 2006 | 34 | 2006 |
Atomistic capacitance of a nanotube electromechanical device SV Rotkin, V Shrivastava, KA Bulashevich, NR Aluru International Journal of Nanoscience 1 (03n04), 337-346, 2002 | 32 | 2002 |
Strain-effect transistors: Theoretical study on the effects of external strain on III-nitride high-electron-mobility transistors on flexible substrates S Shervin, SH Kim, M Asadirad, S Ravipati, KH Lee, K Bulashevich, ... Applied physics letters 107 (19), 2015 | 30 | 2015 |
Hybrid ZnO/III‐nitride light‐emitting diodes: modelling analysis of operation KA Bulashevich, IY Evstratov, SY Karpov physica status solidi (a) 204 (1), 241-245, 2007 | 30 | 2007 |