| Analysis of processes limiting quantum efficiency of AlGaInN LEDs at high pumping IV Rozhansky, DA Zakheim physica status solidi (a) 204 (1), 227-230, 2007 | 270 | 2007 |
| Analysis of the causes of the decrease in the electroluminescence efficiency of AlGaInN light-emitting-diode heterostructures at high pumping density IV Rozhansky, DA Zakheim Semiconductors 40, 839-845, 2006 | 130 | 2006 |
| Analysis of dependence of electroluminescence efficiency of AlInGaN LED heterostructures on pumping IV Rozhansky, DA Zakheim physica status solidi c 3 (6), 2160-2164, 2006 | 92 | 2006 |
| General theory of the topological Hall effect in systems with chiral spin textures KS Denisov, IV Rozhansky, NS Averkiev, E Lähderanta Physical Review B 98 (19), 195439, 2018 | 68 | 2018 |
| Helicity-driven ratchet effect enhanced by plasmons IV Rozhansky, VY Kachorovskii, MS Shur Physical review letters 114 (24), 246601, 2015 | 63 | 2015 |
| Electron scattering on a magnetic skyrmion in the nonadiabatic approximation KS Denisov, IV Rozhansky, NS Averkiev, E Lähderanta Physical review letters 117 (2), 027202, 2016 | 60 | 2016 |
| Millisecond microwave spikes: statistical study and application for plasma diagnostics IV Rozhansky, GD Fleishman, GL Huang The Astrophysical Journal 681 (2), 1688, 2008 | 43 | 2008 |
| Colossal topological Hall effect at the transition between isolated and lattice-phase interfacial skyrmions M Raju, AP Petrović, A Yagil, KS Denisov, NK Duong, B Göbel, ... Nature communications 12 (1), 2758, 2021 | 41 | 2021 |
| Berry phase mechanism of the anomalous Hall effect in a disordered two-dimensional magnetic semiconductor structure LN Oveshnikov, VA Kulbachinskii, AB Davydov, BA Aronzon, ... Scientific reports 5 (1), 17158, 2015 | 38 | 2015 |
| A nontrivial crossover in topological Hall effect regimes KS Denisov, IV Rozhansky, NS Averkiev, E Lähderanta Scientific Reports 7 (1), 17204, 2017 | 35 | 2017 |
| Temperature dependence of the conductivity of Cu: SiO2 composite films. Experiment and numerical simulation DA Zakheim, IV Rozhansky, IP Smirnova, SA Gurevich Journal of Experimental and Theoretical Physics 91, 553-561, 2000 | 23 | 2000 |
| Spin-dependent tunneling in semiconductor heterostructures with a magnetic layer IV Rozhansky, KS Denisov, NS Averkiev, IA Akimov, E Lähderanta Physical Review B 92 (12), 125428, 2015 | 20 | 2015 |
| Resonant exchange interaction in semiconductors IV Rozhansky, IV Krainov, NS Averkiev, E Lähderanta Physical Review B—Condensed Matter and Materials Physics 88 (15), 155326, 2013 | 19 | 2013 |
| A study of thermal processes in high-power InGaN/GaN flip-chip LEDs by IR thermal imaging microscopy AL Zakgeim, GL Kuryshev, MN Mizerov, VG Polovinkin, IV Rozhansky, ... Semiconductors 44, 373-379, 2010 | 19 | 2010 |
| Topological Hall effect for electron scattering on nanoscale skyrmions in external magnetic field KS Denisov, IV Rozhansky, MN Potkina, IS Lobanov, E Lähderanta, ... Physical Review B 98 (21), 214407, 2018 | 15 | 2018 |
| Dynamic spin injection into a quantum well coupled to a spin-split bound state NS Maslova, IV Rozhansky, VN Mantsevich, PI Arseyev, NS Averkiev, ... Physical Review B 97 (19), 195445, 2018 | 15 | 2018 |
| Resonant enhancement of indirect exchange interaction in semiconductor heterostructures IV Rozhansky, NS Averkiev, IV Krainov, E Lähderanta physica status solidi (a) 211 (5), 1048-1054, 2014 | 14 | 2014 |
| Mechanism of ultrafast spin-polarization switching in nanostructures VN Mantsevich, IV Rozhansky, NS Maslova, PI Arseyev, NS Averkiev, ... Physical Review B 99 (11), 115307, 2019 | 13 | 2019 |
| Indirect exchange interaction between magnetic adatoms in graphene IV Krainov, IV Rozhansky, NS Averkiev, E Lähderanta Physical Review B 92 (15), 155432, 2015 | 13 | 2015 |
| Gate-tunable magnetism of C adatoms on graphene J Nokelainen, IV Rozhansky, B Barbiellini, E Lähderanta, K Pussi Physical Review B 99 (3), 035441, 2019 | 12 | 2019 |