Fine structure of biexciton emission in symmetric and asymmetric CdSe/ZnSe single quantum dots VD Kulakovskii, G Bacher, R Weigand, T Kümmell, A Forchel, ...
Physical Review Letters 82 (8), 1780, 1999
509 1999 Single zero-dimensional excitons in CdSe/ZnSe nanostructures T Kümmell, R Weigand, G Bacher, A Forchel, K Leonardi, D Hommel, ...
Applied physics letters 73 (21), 3105-3107, 1998
158 1998 Spectral diffusion of the exciton transition in a single self-organized quantum dot J Seufert, R Weigand, G Bacher, T Kümmell, A Forchel, K Leonardi, ...
Applied Physics Letters 76 (14), 1872-1874, 2000
153 2000 Size control of InAs quantum dashes A Sauerwald, T Kümmell, G Bacher, A Somers, R Schwertberger, ...
Applied Physics Letters 86 (25), 2005
110 2005 Room temperature single photon emission from an epitaxially grown quantum dot O Fedorych, C Kruse, A Ruban, D Hommel, G Bacher, T Kümmell
Applied Physics Letters 100 (6), 2012
98 2012 Lateral quantization effects in lithographically defined CdZnSe/ZnSe quantum dots and quantum wires M Illing, G Bacher, T Kümmell, A Forchel, TG Andersson, D Hommel, ...
Applied physics letters 67 (1), 124-126, 1995
78 1995 Influence of the strain on the formation of GaInAs/GaAs quantum structures A Löffler, JP Reithmaier, A Forchel, A Sauerwald, D Peskes, T Kümmell, ...
Journal of crystal growth 286 (1), 6-10, 2006
67 2006 Room temperature emission from CdSe∕ ZnSSe∕ MgS single quantum dots R Arians, T Kümmell, G Bacher, A Gust, C Kruse, D Hommel
Applied Physics Letters 90 (10), 2007
64 2007 All-inorganic light emitting device based on ZnO nanoparticles E Neshataeva, T Kümmell, G Bacher, A Ebbers
Applied Physics Letters 94 (9), 2009
62 2009 Scalable Large-Area p–i–n Light-Emitting Diodes Based on WS2 Monolayers Grown via MOCVD D Andrzejewski, H Myja, M Heuken, A Grundmann, H Kalisch, A Vescan, ...
ACS Photonics 6 (8), 1832-1839, 2019
55 2019 Flexible Large‐Area Light‐Emitting Devices Based on WS2 Monolayers D Andrzejewski, R Oliver, Y Beckmann, A Grundmann, M Heuken, ...
Advanced Optical Materials 8 (20), 2000694, 2020
46 2020 Large-area MoS2 deposition via MOVPE M Marx, S Nordmann, J Knoch, C Franzen, C Stampfer, D Andrzejewski, ...
Journal of Crystal Growth 464, 100-104, 2017
44 2017 Metalorganic Vapor-Phase Epitaxy Growth Parameters for Two-Dimensional MoS2 M Marx, A Grundmann, YR Lin, D Andrzejewski, T Kümmell, G Bacher, ...
Journal of Electronic Materials 47, 910-916, 2018
42 2018 Resonant micro-Raman investigations of the ZnSe–LO splitting in II–VI semiconductor quantum wires G Lermann, T Bischof, A Materny, W Kiefer, T Kümmell, G Bacher, ...
Journal of applied physics 81 (3), 1446-1450, 1997
41 1997 Improved luminescence properties of MoS2 monolayers grown via MOCVD: role of pre-treatment and growth parameters D Andrzejewski, M Marx, A Grundmann, O Pfingsten, H Kalisch, A Vescan, ...
Nanotechnology 29 (29), 295704, 2018
40 2018 Buried single CdTe/CdMnTe quantum dots realized by focused ion beam lithography G Bacher, T Kümmell, D Eisert, A Forchel, B König, W Ossau, CR Becker, ...
Applied physics letters 75 (7), 956-958, 1999
36 1999 WS 2 monolayer-based light-emitting devices in a vertical p–n architecture D Andrzejewski, E Hopmann, M John, T Kümmell, G Bacher
Nanoscale 11 (17), 8372-8379, 2019
32 2019 Electrically driven single quantum dot emitter operating at room temperature R Arians, A Gust, T Kümmell, C Kruse, S Zaitsev, G Bacher, D Hommel
Applied Physics Letters 93 (17), 2008
29 2008 Gate control of carrier distribution in T Kümmell, W Quitsch, S Matthis, T Litwin, G Bacher
Physical Review B 91 (12), 125305, 2015
28 2015 Fabrication of CdZnSe/ZnSe quantum dots and quantum wires by electron beam lithography and wet chemical etching M Illing, G Bacher, T Kümmell, A Forchel, D Hommel, B Jobst, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1995
28 1995 