The germanium quantum information route G Scappucci, C Kloeffel, FA Zwanenburg, D Loss, M Myronov, JJ Zhang, ...
Nature Reviews Materials, 1-18, 2020
347 2020 Band engineering and growth of tensile strained Ge/(Si) GeSn heterostructures for tunnel field effect transistors S Wirths, AT Tiedemann, Z Ikonic, P Harrison, B Holländer, T Stoica, ...
Applied physics letters 102 (19), 192103, 2013
196 2013 Ohmic contacts to n-type germanium with low specific contact resistivity K Gallacher, P Velha, DJ Paul, I MacLaren, M Myronov, DR Leadley
Applied Physics Letters 100 (2), 022113, 2012
124 2012 Experimental Demonstration of Room-Temperature Spin Transport in S Dushenko, M Koike, Y Ando, T Shinjo, M Myronov, M Shiraishi
Physical review letters 114 (19), 196602, 2015
112 2015 Ultra-high hole mobility exceeding one million in a strained germanium quantum well A Dobbie, M Myronov, RJH Morris, AHA Hassan, MJ Prest, VA Shah, ...
Applied Physics Letters 101 (17), 172108, 2012
110 2012 Ge-on-Si single-photon avalanche diode detectors: design, modeling, fabrication, and characterization at wavelengths 1310 and 1550 nm RE Warburton, G Intermite, M Myronov, P Allred, DR Leadley, K Gallacher, ...
IEEE Transactions on Electron Devices 60 (11), 3807-3813, 2013
108 2013 Reverse graded relaxed buffers for high Ge content SiGe virtual substrates VA Shah, A Dobbie, M Myronov, DJF Fulgoni, LJ Nash, DR Leadley
Applied Physics Letters 93 (19), 192103, 2008
108 2008 Reverse graded SiGe/Ge/Si buffers for high-composition virtual substrates VA Shah, A Dobbie, M Myronov, DR Leadley
Journal of Applied Physics 107 (6), 064304, 2010
103 2010 Modelling the inhomogeneous SiC Schottky interface PM Gammon, A Pérez-Tomás, VA Shah, O Vavasour, E Donchev, ...
Journal of Applied Physics 114 (22), 223704, 2013
100 2013 Mobility spectrum computational analysis using a maximum entropy approach S Kiatgamolchai, M Myronov, OA Mironov, VG Kantser, EHC Parker, ...
Physical Review E 66 (3), 036705, 2002
95 2002 High quality relaxed Ge layers grown directly on a Si (0 0 1) substrate VA Shah, A Dobbie, M Myronov, DR Leadley
Solid-State Electronics 62 (1), 189-194, 2011
83 2011 Uprooting defects to enable high-performance III–V optoelectronic devices on silicon YA Bioud, A Boucherif, M Myronov, A Soltani, G Patriarche, N Braidy, ...
Nature communications 10 (1), 1-12, 2019
74 2019 Modulation of the absorption coefficient at 1.3 μm in Ge/SiGe multiple quantum well heterostructures on silicon L Lever, Y Hu, M Myronov, X Liu, N Owens, FY Gardes, IP Marko, ...
Optics letters 36 (21), 4158-4160, 2011
73 2011 Extremely high room-temperature two-dimensional hole gas mobility in p -type modulation-doped heterostructures M Myronov, T Irisawa, OA Mironov, S Koh, Y Shiraki, TE Whall, ...
Applied physics letters 80 (17), 3117-3119, 2002
68 2002 Observation of Rashba zero-field spin splitting in a strained germanium 2D hole gas C Morrison, P Wiśniewski, SD Rhead, J Foronda, DR Leadley, M Myronov
Applied Physics Letters 105 (18), 182401, 2014
60 2014 Hole density dependence of effective mass, mobility and transport time in strained Ge channel modulation-doped heterostructures T Irisawa, M Myronov, OA Mironov, EHC Parker, K Nakagawa, M Murata, ...
Applied Physics Letters 82 (9), 1425-1427, 2003
59 2003 Temperature-dependent photoluminescence characteristics of GeSn epitaxial layers F Pezzoli, A Giorgioni, D Patchett, M Myronov
Acs Photonics 3 (11), 2004-2009, 2016
58 2016 Effect of layer thickness on structural quality of Ge epilayers grown directly on Si (001) VA Shah, A Dobbie, M Myronov, DR Leadley
Thin Solid Films 519 (22), 7911-7917, 2011
57 2011 Observation of two-dimensional hole gas with mobility and carrier density exceeding those of two-dimensional electron gas at room temperature in the SiGe heterostructures M Myronov, K Sawano, Y Shiraki, T Mouri, KM Itoh
Applied Physics Letters 91 (8), 082108, 2007
51 2007 Temperature dependence of the breakdown of the quantum Hall effect studied by induced currents AJ Matthews, KV Kavokin, A Usher, ME Portnoi, M Zhu, JD Gething, ...
Physical Review B 70 (7), 075317, 2004
51 2004 