| Electrical characterization of 2D materials-based field-effect transistors SB Mitta, MS Choi, A Nipane, F Ali, C Kim, JT Teherani, J Hone, WJ Yoo 2D Materials 8 (1), 012002, 2020 | 180 | 2020 |
| Resonant tunnelling diodes based on twisted black phosphorus homostructures PK Srivastava, Y Hassan, DJP de Sousa, Y Gebredingle, M Joe, F Ali, ... Nature Electronics 4 (4), 269-276, 2021 | 56 | 2021 |
| Gate-Modulated Ultrasensitive Visible and Near-Infrared Photodetection of Oxygen Plasma-Treated WSe2 Lateral pn-Homojunctions SB Mitta, F Ali, Z Yang, I Moon, F Ahmed, TJ Yoo, BH Lee, WJ Yoo ACS Applied Materials & Interfaces 12 (20), 23261-23271, 2020 | 51 | 2020 |
| Dielectric dispersion and high field response of multilayer hexagonal boron nitride F Ahmed, S Heo, Z Yang, F Ali, CH Ra, HI Lee, T Taniguchi, J Hone, ... Advanced Functional Materials 28 (40), 1804235, 2018 | 50 | 2018 |
| Fermi‐level pinning free high‐performance 2D CMOS inverter fabricated with van der Waals bottom contacts TD Ngo, Z Yang, M Lee, F Ali, I Moon, DG Kim, T Taniguchi, K Watanabe, ... Advanced Electronic Materials 7 (5), 2001212, 2021 | 49 | 2021 |
| Control of the Schottky Barrier and Contact Resistance at Metal–WSe2 Interfaces by Polymeric Doping TD Ngo, M Lee, Z Yang, F Ali, I Moon, WJ Yoo Advanced Electronic Materials 6 (10), 2000616, 2020 | 33 | 2020 |
| Phase-engineered molybdenum telluride/black phosphorus Van der Waals heterojunctions for tunable multivalued logic Y Hassan, PK Srivastava, B Singh, MS Abbas, F Ali, WJ Yoo, C Lee ACS Applied Materials & Interfaces 12 (12), 14119-14124, 2020 | 29 | 2020 |
| Selective Electron Beam Patterning of Oxygen‐Doped WSe2 for Seamless Lateral Junction Transistors TD Ngo, MS Choi, M Lee, F Ali, Y Hassan, N Ali, S Liu, C Lee, J Hone, ... Advanced Science 9 (26), 2202465, 2022 | 25 | 2022 |
| Traps at the hBN/WSe2 interface and their impact on polarity transition in WSe2 F Ali, F Ahmed, M Taqi, SB Mitta, TD Ngo, DJ Eom, K Watanabe, ... 2D Materials 8 (3), 035027, 2021 | 25 | 2021 |
| Energy dissipation in black phosphorus heterostructured devices F Ali, F Ahmed, Z Yang, I Moon, M Lee, Y Hassan, C Lee, WJ Yoo Advanced Materials Interfaces 6 (2), 1801528, 2019 | 17 | 2019 |
| Anomalously persistent p-type behavior of WSe 2 field-effect transistors by oxidized edge-induced Fermi-level pinning TD Ngo, MS Choi, M Lee, F Ali, WJ Yoo Journal of Materials Chemistry C 10 (3), 846-853, 2022 | 14 | 2022 |
| Metal–Insulator Transition Driven by Traps in 2D WSe2 Field‐Effect Transistor F Ali, N Ali, M Taqi, TD Ngo, M Lee, H Choi, WK Park, E Hwang, WJ Yoo Advanced Electronic Materials 8 (9), 2200046, 2022 | 13 | 2022 |
| Strain Engineering for Enhancing Carrier Mobility in MoTe2 Field‐Effect Transistors AM Shafi, MG Uddin, X Cui, F Ali, F Ahmed, M Radwan, S Das, ... Advanced Science 10 (29), 2303437, 2023 | 12 | 2023 |
| Modulation of Contact Resistance of Dual‐Gated MoS2 FETs Using Fermi‐Level Pinning‐Free Antimony Semi‐Metal Contacts TD Ngo, T Huynh, H Jung, F Ali, J Jeon, MS Choi, WJ Yoo Advanced Science 10 (21), 2301400, 2023 | 11 | 2023 |
| Self‐Powered 2D MoS2/WOx/WSe2 Heterojunction Photodetector Realized by Oxygen Plasma Treatment H Shin, M Taqi, F Ali, S Lee, MS Choi, C Kim, BH Lee, X Liu, J Sun, B Oh, ... Advanced Materials Interfaces 9 (32), 2201785, 2022 | 9 | 2022 |
| Ultrahigh anisotropic transport properties of black phosphorus field effect transistors realized by edge contact M Lee, N Ali, F Ali, K Watanabe, T Taniguchi, WJ Yoo Advanced Electronic Materials 8 (3), 2100988, 2022 | 9 | 2022 |
| Broadening spectral responses and achieving environmental stability in SnS 2/Ag-NPs/HfO 2 flexible phototransistors MF Khan, S Sadaqat, MA Khan, S Rehman, WS Subhani, M Ouladsmane, ... Nanoscale 16 (7), 3622-3630, 2024 | 6 | 2024 |
| Probing Intrinsic Defect-Induced Trap States and Hopping Transport in Two-Dimensional PdSe2 Semiconductor Devices Z Wang, N Ali, F Ali, H Choi, H Shin, WJ Yoo ACS Applied Materials & Interfaces 14 (50), 55787-55794, 2022 | 5 | 2022 |
| Percolation-Based Metal–Insulator Transition in Black Phosphorus Field Effect Transistors N Ali, M Lee, F Ali, TD Ngo, H Park, H Shin, WJ Yoo ACS Applied Materials & Interfaces 15 (10), 13299-13306, 2023 | 3 | 2023 |
| Interface state density and barrier height improvement in ammonium sulfide treated Al2O3/Si interfaces K Agrawal, V Patil, F Ali, M Rabelo, WJ Yoo, EC Cho, J Yi Current Applied Physics 26, 83-89, 2021 | 3 | 2021 |
Won Jong YooProfessor of Sungkyunkwan UniversityBestätigte E-Mail-Adresse bei skku.edu
