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Borish Moirangthem
Borish Moirangthem
Research Scholar, NIT Nagaland
Bestätigte E-Mail-Adresse bei nitnagaland.ac.in
Titel
Zitiert von
Zitiert von
Jahr
Investigation on structural and photodetection properties of Gd2O3 thin films after annealing
PN Meitei, B Moirangthem, C Ngangbam, MW Alam, NK Singh
Journal of Materials Science: Materials in Electronics 33 (14), 10705-10714, 2022
172022
Forming-free RRAM device based on HfO2 thin film for non-volatile memory application using E-beam evaporation method
B Moirangthem, PN Meitei, AK Debnath, NK Singh
Journal of Materials Science: Materials in Electronics 34 (4), 306, 2023
112023
Fast switching photodetector based on HfO2 thin film deposited using electron beam evaporation technique
B Moirangthem, MW Alam, NK Singh
Applied Physics A 129 (9), 622, 2023
72023
Improved performance for Ag nanoparticles-assisted HfO2 thin film-based memcapacitive device
B Moirangthem, NK Almulhem, MW Alam, NK Singh
Sensors and Actuators A: Physical 370, 115246, 2024
32024
Technology Survey of Pillbox and Design using IoT
MB Moirangthem, MP Tambe, ML Panat, P Chitra, MBP Singh
Technology 6 (02), 2019
22019
Bipolar resistive switching behavior of bilayer β-Ga2O3/WO3 thin film memristor device
MW Alam, A Jamir, B Longkumer, B Souayeh, S Sadaf, B Moirangthem
Journal of Alloys and Compounds 1010, 177032, 2025
2025
Study on Structural and Optical Properties of Ta205 Nanocluster Check for updates
ER Singh, B Moirangthem, NK Singh
Recent Advances in Materials: Select Proceedings of ICSTE 2023 25, 97, 2023
2023
Study on Structural and Optical Properties of Ta2O5 Nanocluster
ER Singh, B Moirangthem, NK Singh
International Conference on Science, Technology and Engineering, 97-102, 2023
2023
Bipolar Resistive Switching Behavior of Bilayer Β-Ga2o3/Wo3 Tf Memristor Device
MW Alam, A Jami, B Longkumer, B Souayeh, S Sadaf, B Moirangthem
Available at SSRN 4910954, 0
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