Enhanced ferroelectricity in ultrathin films grown directly on silicon SS Cheema, D Kwon, N Shanker, R Dos Reis, SL Hsu, J Xiao, H Zhang, ...
Nature 580 (7804), 478-482, 2020
730 2020 Ultrathin ferroic HfO2–ZrO2 superlattice gate stack for advanced transistors SS Cheema*, N Shanker*, LC Wang, CH Hsu, SL Hsu, YH Liao, ...
Nature 604 (7904), 65-71, 2022
224 2022 Ferroelectric HfO2 Memory Transistors With High-κ Interfacial Layer and Write Endurance Exceeding 1010 Cycles AJ Tan, YH Liao, LC Wang, N Shanker, JH Bae, C Hu, S Salahuddin
IEEE Electron Device Letters 42 (7), 994-997, 2021
171 2021 Negative Capacitance FET With 1.8-nm-Thick Zr-Doped HfO2 Oxide D Kwon, S Cheema, N Shanker, K Chatterjee, YH Liao, AJ Tan, C Hu, ...
IEEE Electron Device Letters 40 (6), 993-996, 2019
140 2019 Emergent ferroelectricity in subnanometer binary oxide films on silicon SS Cheema*, N Shanker*, SL Hsu*, Y Rho, CH Hsu, VA Stoica, Z Zhang, ...
Science 376 (6593), 648-652, 2022
123 2022 One Nanometer HfO2‐Based Ferroelectric Tunnel Junctions on Silicon SS Cheema*, N Shanker*, CH Hsu, A Datar, J Bae, D Kwon, ...
Advanced Electronic Materials 8 (6), 2270025, 2022
108 2022 Fast read-after-write and depolarization fields in high endurance n-type ferroelectric FETs M Hoffmann, AJ Tan, N Shanker, YH Liao, LC Wang, JH Bae, C Hu, ...
IEEE Electron Device Letters 43 (5), 717-720, 2022
40 2022 Giant energy storage and power density negative capacitance superlattices SS Cheema*, N Shanker*, SL Hsu*, J Schaadt, NM Ellis, M Cook, ...
Nature, 1-3, 2024
28 2024 Electric field-induced permittivity enhancement in negative-capacitance FET YH Liao, D Kwon, S Cheema, N Shanker, AJ Tan, MY Kao, LC Wang, ...
IEEE Transactions on Electron Devices 68 (3), 1346-1351, 2021
13 2021 Write disturb-free ferroelectric FETs with non-accumulative switching dynamics M Hoffmann, AJ Tan, N Shanker, YH Liao, LC Wang, JH Bae, C Hu, ...
IEEE Electron Device Letters 43 (12), 2097-2100, 2022
11 2022 Enhancement in Capacitance and Transconductance in 90 nm nFETs with HfO2 -ZrO2 Superlattice Gate Stack for Energy-efficient Cryo-CMOS W Li, LC Wang, SS Cheema, N Shanker, C Hu, S Salahuddin
2022 International Electron Devices Meeting (IEDM), 22.3. 1-22.3. 4, 2022
10 2022 FeFETs for near-memory and in-memory compute S Salahuddin, A Tan, S Cheema, N Shanker, M Hoffmann, JH Bae
2021 IEEE International Electron Devices Meeting (IEDM), 19.4. 1-19.4. 4, 2021
10 2021 CMOS Demonstration of Negative Capacitance HfO2 -ZrO2 Superlattice Gate Stack in a Self-Aligned, Replacement Gate Process N Shanker, M Cook, SS Cheema, W Li, R Rastogi, D Pipitone, C Chen, ...
2022 International Electron Devices Meeting (IEDM), 34.3. 1-34.3. 4, 2022
8 2022 Demonstration of Low EOT Gate Stack and Record Transconductance on nm nFETs Using 1.8 nm Ferroic HfO2-ZrO2 Superlattice W Li, LC Wang, SS Cheema, N Shanker, JH Park, YH Liao, SL Hsu, ...
2021 IEEE International Electron Devices Meeting (IEDM), 13.6. 1-13.6. 4, 2021
7 2021 Quantitative study of EOT lowering in negative capacitance HfO₂-ZrO₂ superlattice gate stacks M Hoffmann*, SS Cheema*, N Shanker*, W Li, S Salahuddin
2022 International Electron Devices Meeting (IEDM), 13.2. 1-13.2. 4, 2022
5 2022 On the PBTI Reliability of Low EOT Negative Capacitance 1.8 nm HfO2-ZrO2 Superlattice Gate Stack on Lg=90 nm nFETs N Shanker, LC Wang, SS Cheema, W Li, N Choudhury, C Hu, ...
2022 Symposium on VLSI Technology, 2022
5 2022 Record Transconductance in Leff ~30 nm Self-Aligned Replacement Gate ETSOI nFETs Using Low EOT Negative Capacitance HfO2 -ZrO2 Superlattice Gate Stack LC Wang, W Li, N Shanker, SS Cheema, SL Hsu, S Volkman, U Sikder, ...
2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2023
4 2023 Anisotropic Ferroelectricity in Polar Vortices P Behera, AM Ross, N Shanker, P Meisenheimer, M Manna, CC Lin, ...
Advanced Materials 37 (1), 2410149, 2025
2025 Ultra Thin Body, Short Channel Silicon Transistors Down to 3 nm Si Channel JH Park, LC Wang, U Sikder, SL Hsu, CC Lee, C Garg, N Shanker, ...
IEEE Electron Device Letters, 2024
2024 Superlattice, ferroic order thin films for use as high/negative-k dielectric S Salahuddin, SS Cheema, N Shanker, CH Hsu, D Kwon
US Patent App. 18/553,602, 2024
2024