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Nirmaan Shanker
Nirmaan Shanker
Research Scientist, IBM
Bestätigte E-Mail-Adresse bei ibm.com
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Zitiert von
Zitiert von
Jahr
Enhanced ferroelectricity in ultrathin films grown directly on silicon
SS Cheema, D Kwon, N Shanker, R Dos Reis, SL Hsu, J Xiao, H Zhang, ...
Nature 580 (7804), 478-482, 2020
7302020
Ultrathin ferroic HfO2–ZrO2 superlattice gate stack for advanced transistors
SS Cheema*, N Shanker*, LC Wang, CH Hsu, SL Hsu, YH Liao, ...
Nature 604 (7904), 65-71, 2022
2242022
Ferroelectric HfO2 Memory Transistors With High-κ Interfacial Layer and Write Endurance Exceeding 1010 Cycles
AJ Tan, YH Liao, LC Wang, N Shanker, JH Bae, C Hu, S Salahuddin
IEEE Electron Device Letters 42 (7), 994-997, 2021
1712021
Negative Capacitance FET With 1.8-nm-Thick Zr-Doped HfO2 Oxide
D Kwon, S Cheema, N Shanker, K Chatterjee, YH Liao, AJ Tan, C Hu, ...
IEEE Electron Device Letters 40 (6), 993-996, 2019
1402019
Emergent ferroelectricity in subnanometer binary oxide films on silicon
SS Cheema*, N Shanker*, SL Hsu*, Y Rho, CH Hsu, VA Stoica, Z Zhang, ...
Science 376 (6593), 648-652, 2022
1232022
One Nanometer HfO2‐Based Ferroelectric Tunnel Junctions on Silicon
SS Cheema*, N Shanker*, CH Hsu, A Datar, J Bae, D Kwon, ...
Advanced Electronic Materials 8 (6), 2270025, 2022
1082022
Fast read-after-write and depolarization fields in high endurance n-type ferroelectric FETs
M Hoffmann, AJ Tan, N Shanker, YH Liao, LC Wang, JH Bae, C Hu, ...
IEEE Electron Device Letters 43 (5), 717-720, 2022
402022
Giant energy storage and power density negative capacitance superlattices
SS Cheema*, N Shanker*, SL Hsu*, J Schaadt, NM Ellis, M Cook, ...
Nature, 1-3, 2024
282024
Electric field-induced permittivity enhancement in negative-capacitance FET
YH Liao, D Kwon, S Cheema, N Shanker, AJ Tan, MY Kao, LC Wang, ...
IEEE Transactions on Electron Devices 68 (3), 1346-1351, 2021
132021
Write disturb-free ferroelectric FETs with non-accumulative switching dynamics
M Hoffmann, AJ Tan, N Shanker, YH Liao, LC Wang, JH Bae, C Hu, ...
IEEE Electron Device Letters 43 (12), 2097-2100, 2022
112022
Enhancement in Capacitance and Transconductance in 90 nm nFETs with HfO2-ZrO2 Superlattice Gate Stack for Energy-efficient Cryo-CMOS
W Li, LC Wang, SS Cheema, N Shanker, C Hu, S Salahuddin
2022 International Electron Devices Meeting (IEDM), 22.3. 1-22.3. 4, 2022
102022
FeFETs for near-memory and in-memory compute
S Salahuddin, A Tan, S Cheema, N Shanker, M Hoffmann, JH Bae
2021 IEEE International Electron Devices Meeting (IEDM), 19.4. 1-19.4. 4, 2021
102021
CMOS Demonstration of Negative Capacitance HfO2-ZrO2 Superlattice Gate Stack in a Self-Aligned, Replacement Gate Process
N Shanker, M Cook, SS Cheema, W Li, R Rastogi, D Pipitone, C Chen, ...
2022 International Electron Devices Meeting (IEDM), 34.3. 1-34.3. 4, 2022
82022
Demonstration of Low EOT Gate Stack and Record Transconductance on nm nFETs Using 1.8 nm Ferroic HfO2-ZrO2 Superlattice
W Li, LC Wang, SS Cheema, N Shanker, JH Park, YH Liao, SL Hsu, ...
2021 IEEE International Electron Devices Meeting (IEDM), 13.6. 1-13.6. 4, 2021
72021
Quantitative study of EOT lowering in negative capacitance HfO₂-ZrO₂ superlattice gate stacks
M Hoffmann*, SS Cheema*, N Shanker*, W Li, S Salahuddin
2022 International Electron Devices Meeting (IEDM), 13.2. 1-13.2. 4, 2022
52022
On the PBTI Reliability of Low EOT Negative Capacitance 1.8 nm HfO2-ZrO2 Superlattice Gate Stack on Lg=90 nm nFETs
N Shanker, LC Wang, SS Cheema, W Li, N Choudhury, C Hu, ...
2022 Symposium on VLSI Technology, 2022
52022
Record Transconductance in Leff~30 nm Self-Aligned Replacement Gate ETSOI nFETs Using Low EOT Negative Capacitance HfO2-ZrO2 Superlattice Gate Stack
LC Wang, W Li, N Shanker, SS Cheema, SL Hsu, S Volkman, U Sikder, ...
2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2023
42023
Anisotropic Ferroelectricity in Polar Vortices
P Behera, AM Ross, N Shanker, P Meisenheimer, M Manna, CC Lin, ...
Advanced Materials 37 (1), 2410149, 2025
2025
Ultra Thin Body, Short Channel Silicon Transistors Down to 3 nm Si Channel
JH Park, LC Wang, U Sikder, SL Hsu, CC Lee, C Garg, N Shanker, ...
IEEE Electron Device Letters, 2024
2024
Superlattice, ferroic order thin films for use as high/negative-k dielectric
S Salahuddin, SS Cheema, N Shanker, CH Hsu, D Kwon
US Patent App. 18/553,602, 2024
2024
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