| Single-event burnout mechanisms in SiC power MOSFETs AF Witulski, DR Ball, KF Galloway, A Javanainen, JM Lauenstein, ... IEEE Transactions on Nuclear Science 65 (8), 1951-1955, 2018 | 151 | 2018 |
| Ion-induced energy pulse mechanism for single-event burnout in high-voltage SiC power MOSFETs and junction barrier Schottky diodes DR Ball, KF Galloway, RA Johnson, ML Alles, AL Sternberg, BD Sierawski, ... IEEE Transactions on Nuclear Science 67 (1), 22-28, 2019 | 112 | 2019 |
| Single-event burnout of SiC junction barrier Schottky diode high-voltage power devices AF Witulski, R Arslanbekov, A Raman, RD Schrimpf, AL Sternberg, ... IEEE Transactions on Nuclear Science 65 (1), 256-261, 2017 | 98 | 2017 |
| Heavy ion induced degradation in SiC Schottky diodes: Bias and energy deposition dependence A Javanainen, KF Galloway, C Nicklaw, AL Bosser, V Ferlet-Cavrois, ... IEEE Transactions on Nuclear Science 64 (1), 415-420, 2016 | 86 | 2016 |
| Heavy-ion microbeam studies of single-event leakage current mechanism in SiC VD-MOSFETs C Martinella, T Ziemann, R Stark, A Tsibizov, KO Voss, RG Alia, Y Kadi, ... IEEE Transactions on Nuclear Science 67 (7), 1381-1389, 2020 | 64 | 2020 |
| Heavy-ion-induced degradation in SiC Schottky diodes: Incident angle and energy deposition dependence A Javanainen, M Turowski, KF Galloway, C Nicklaw, V Ferlet-Cavrois, ... IEEE Transactions on Nuclear Science 64 (8), 2031-2037, 2017 | 60 | 2017 |
| Linear energy transfer of heavy ions in silicon A Javanainen, T Malkiewicz, J Perkowski, WH Trzaska, A Virtanen, ... IEEE Transactions on Nuclear Science 54 (4), 1158-1162, 2007 | 53 | 2007 |
| Estimating terrestrial neutron-induced SEB cross sections and FIT rates for high-voltage SiC power MOSFETs DR Ball, BD Sierawski, KF Galloway, RA Johnson, ML Alles, AL Sternberg, ... IEEE Transactions on Nuclear Science 66 (1), 337-343, 2018 | 50 | 2018 |
| Energy loss measurement of protons in liquid water T Siiskonen, H Kettunen, K Peräjärvi, A Javanainen, M Rossi, WH Trzaska, ... Physics in Medicine & Biology 56 (8), 2367, 2011 | 49 | 2011 |
| Current transport mechanism for heavy-ion degraded SiC MOSFETs C Martinella, R Stark, T Ziemann, RG Alía, Y Kadi, U Grossner, ... IEEE Transactions on Nuclear Science 66 (7), 1702-1709, 2019 | 48 | 2019 |
| Impact of terrestrial neutrons on the reliability of SiC VD-MOSFET technologies C Martinella, RG Alía, R Stark, A Coronetti, C Cazzaniga, M Kastriotou, ... IEEE Transactions on Nuclear Science 68 (5), 634-641, 2021 | 47 | 2021 |
| Failure estimates for SiC power MOSFETs in space electronics KF Galloway, AF Witulski, RD Schrimpf, AL Sternberg, DR Ball, ... Aerospace 5 (3), 67, 2018 | 45 | 2018 |
| Influence of beam conditions and energy for SEE testing V Ferlet-Cavrois, JR Schwank, S Liu, M Muschitiello, T Beutier, ... IEEE Transactions on Nuclear Science 59 (4), 1149-1160, 2012 | 45 | 2012 |
| Dynamic test methods for COTS SRAMs G Tsiligiannis, L Dilillo, V Gupta, A Bosio, P Girard, A Virazel, H Puchner, ... IEEE Transactions on Nuclear Science 61 (6), 3095-3102, 2014 | 41 | 2014 |
| Upgrades for the RADEF facility A Virtanen, R Harboe-Sorensen, A Javanainen, H Kettunen, H Koivisto, ... 2007 IEEE Radiation Effects Data Workshop, 38-41, 2007 | 40 | 2007 |
| Enhanced charge collection in SiC power MOSFETs demonstrated by pulse-laser two-photon absorption SEE experiments RA Johnson, AF Witulski, DR Ball, KF Galloway, AL Sternberg, E Zhang, ... IEEE Transactions on Nuclear Science 66 (7), 1694-1701, 2019 | 39 | 2019 |
| Assessment of proton direct ionization for the radiation hardness assurance of deep submicron SRAMs used in space applications A Coronetti, RG Alìa, J Wang, M Tali, M Cecchetto, C Cazzaniga, ... IEEE Transactions on Nuclear Science 68 (5), 937-948, 2021 | 38 | 2021 |
| Unifying concepts for ion-induced leakage current degradation in silicon carbide Schottky power diodes RA Johnson, AF Witulski, DR Ball, KF Galloway, AL Sternberg, RA Reed, ... IEEE Transactions on Nuclear Science 67 (1), 135-139, 2019 | 36 | 2019 |
| Charge transport mechanisms in heavy-ion driven leakage current in silicon carbide Schottky power diodes A Javanainen, KF Galloway, V Ferlet-Cavrois, JM Lauenstein, ... IEEE Transactions on Device and Materials Reliability 16 (2), 208-212, 2016 | 35 | 2016 |
| Heavy-ion induced charge yield in MOSFETs A Javanainen, JR Schwank, MR Shaneyfelt, R Harboe-Sorensen, ... IEEE Transactions on Nuclear Science 56 (6), 3367-3371, 2009 | 32 | 2009 |
Ron SchrimpfProfessor of Electrical Engineering, Vanderbilt UniversityBestätigte E-Mail-Adresse bei vanderbilt.edu
