High-Voltage (> 1.2 kV) AlGaN/GaN Monolithic Bidirectional HEMTs With Low On-Resistance (2.54 mΩ⋅ cm2) MT Alam, J Chen, R Bai, SS Pasayat, C Gupta
IEEE Transactions on Electron Devices 71 (1), 733-738, 2024
6 2024 MOCVD of InGaN on ScAlMgO4 on Al2 O3 Substrates with Improved Surface Morphology and Crystallinity G Wang, Y Li, J Kirch, Y Han, J Chen, S Marks, S Mukhopadhyay, R Liu, ...
Crystals 13 (3), 446, 2023
2 2023 Crack-Free High-Composition (> 35%) Thick-Barrier (> 30 nm) AlGaN/AlN/GaN High-Electron-Mobility Transistor on Sapphire with Low Sheet Resistance (< 250 Ω/□) S Mukhopadhyay, C Liu, J Chen, M Tahmidul Alam, S Sanyal, R Bai, ...
Crystals 13 (10), 1456, 2023
1 2023 64% AIGaN channel HFET with high Johnson’s Figure of Merit (> 6THz∙ V) J Chen, P Seshadri, K Stephenson, MA Mamun, R Bai, Z Wang, A Khan, ...
IEEE Electron Device Letters, 2025
2025 2 kV Al0.64 Ga0.36 N-channel HEMTs with Passivation and Field-Plates MT Alam, J Chen, K Stephenson, A Mamun, AAM Mazumder, SS Pasayat, ...
Applied Physics Express, 2024
2024 376 nm High-Power UV-A Laser Diodes with GaN Waveguide Q Lin, C Liu, G Wang, S Sanyal, M Dwyer, M Seitz, J Chen, Y Li, T Earles, ...
IEEE Photonics Technology Letters, 2024
2024 Demonstration of Effective Intrinsic Electron Velocity P Seshadri, J Chen, K Stephenson, MA Mamun, R Bai, Z Wang, ...
IEEE Transactions on Electron Devices, 2024
2024 Al0.87 Ga0.13 N/Al0.64 Ga0.36 N HFET with fT >17 GHz and Vbr > 360 V J Chen, K Stephenson, MA Mamun, Z Wang, P Seshadri, A Khan, ...
2024 Device Research Conference (DRC), 1-2, 2024
2024 
Chirag GuptaAssistant Professor, UW MadisonBestätigte E-Mail-Adresse bei wisc.edu
