Folgen
M. Hong
M. Hong
Natl Taiwan Univ. Bell Laboratories
Bestätigte E-Mail-Adresse bei phys.ntu.edu.tw
Titel
Zitiert von
Zitiert von
Jahr
Ga2O3 films for electronic and optoelectronic applications
M Passlack, EF Schubert, WS Hobson, M Hong, N Moriya, SNG Chu, ...
Journal of applied physics 77 (2), 686-693, 1995
5311995
Epitaxial cubic gadolinium oxide as a dielectric for gallium arsenide passivation
M Hong, J Kwo, AR Kortan, JP Mannaerts, AM Sergent
Science 283 (5409), 1897-1900, 1999
5201999
Surface passivation of III-V compound semiconductors using atomic-layer-deposition-grown Al2O3
ML Huang, YC Chang, CH Chang, YJ Lee, P Chang, J Kwo, TB Wu, ...
Applied Physics Letters 87 (25), 2005
4842005
Observation of a magnetic antiphase domain structure with long-range order in a synthetic Gd-Y superlattice
CF Majkrzak, JW Cable, J Kwo, M Hong, DB McWhan, Y Yafet, ...
Physical review letters 56 (25), 2700, 1986
4611986
Cubic HfO {sub 2} doped with Y {sub 2} O {sub 3} epitaxial films on GaAs (001) of enhanced dielectric constant
ZK Yang, WC Lee, YJ Lee, P Chang, ML Huang, M Hong, CH Hsu, J Kwo
Applied Physics Letters 90 (15), 2007
4342007
GaAs metal–oxide–semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition
PD Ye, GD Wilk, B Yang, J Kwo, SNG Chu, S Nakahara, HJL Gossmann, ...
Applied Physics Letters 83 (1), 180-182, 2003
4172003
Crystal structure of the 80 K superconductor YBa2Cu4O8
P Marsh, RM Fleming, ML Mandich, AM DeSantolo, J Kwo, M Hong, ...
Nature 334 (6178), 141-143, 1988
4041988
Properties of high κ gate dielectrics and for Si
J Kwo, M Hong, AR Kortan, KL Queeney, YJ Chabal, RL Opila Jr, ...
Journal of Applied Physics 89 (7), 3920-3927, 2001
4032001
High ε gate dielectrics and for silicon
J Kwo, M Hong, AR Kortan, KT Queeney, YJ Chabal, JP Mannaerts, ...
Applied Physics Letters 77 (1), 130-132, 2000
3972000
Evidence for weak link and anisotropy limitations on the transport critical current in bulk polycrystalline Y1Ba2Cu3Ox
JW Ekin, AI Braginski, AJ Panson, MA Janocko, DW Capone, NJ Zaluzec, ...
Journal of applied physics 62 (12), 4821-4828, 1987
3771987
GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition
PD Ye, GD Wilk, J Kwo, B Yang, HJL Gossmann, M Frei, SNG Chu, ...
IEEE Electron Device Letters 24 (4), 209-211, 2003
3422003
Optical properties of gallium oxide thin films
M Rebien, W Henrion, M Hong, JP Mannaerts, M Fleischer
Applied physics letters 81 (2), 250-252, 2002
3032002
Quasistatic and high frequency capacitance–voltage characterization of Ga2O3–GaAs structures fabricated by in situ molecular beam epitaxy
M Passlack, M Hong, JP Mannaerts
Applied physics letters 68 (8), 1099-1101, 1996
2971996
Structural and superconducting properties of orientation-ordered Y 1 Ba 2 Cu 3 O 7− x films prepared by molecular-beam epitaxy
J Kwo, TC Hsieh, RM Fleming, M Hong, SH Liou, BA Davidson, ...
Physical Review B 36 (7), 4039, 1987
2851987
Effect of temperature on metal–oxide–semiconductor field-effect transistors
F Ren, M Hong, SNG Chu, MA Marcus, MJ Schurman, A Baca, SJ Pearton, ...
Applied Physics Letters 73 (26), 3893-3895, 1998
2831998
III–V compound semiconductor transistors—from planar to nanowire structures
H Riel, LE Wernersson, M Hong, JA Del Alamo
Mrs Bulletin 39 (8), 668-677, 2014
2742014
Energy-band parameters of atomic-layer-deposition Al2O3∕ InGaAs heterostructure
ML Huang, YC Chang, CH Chang, TD Lin, J Kwo, TB Wu, M Hong
Applied physics letters 89 (1), 2006
2452006
Magnetic and structural properties of single-crystal rare-earth Gd-Y superlattices
J Kwo, EM Gyorgy, DB McWhan, M Hong, FJ DiSalvo, C Vettier, JE Bower
Physical review letters 55 (13), 1402, 1985
2441985
Dielectric properties of electron‐beam deposited Ga2O3 films
M Passlack, NEJ Hunt, EF Schubert, GJ Zydzik, M Hong, JP Mannaerts, ...
Applied physics letters 64 (20), 2715-2717, 1994
2361994
Magnetic rare earth superlattices
CF Majkrzak, J Kwo, M Hong, Y Yafet, D Gibbs, CL Chien, J Bohr
Advances in Physics 40 (2), 99-189, 1991
2361991
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