Folgen
Baishun Yang
Baishun Yang
CNR-SPIN
Bestätigte E-Mail-Adresse bei mails.jlu.edu.cn
Titel
Zitiert von
Zitiert von
Jahr
Tuning magnetism of monolayer MoS2 by doping vacancy and applying strain
H Zheng, B Yang, D Wang, R Han, X Du, Y Yan
Applied Physics Letters 104 (13), 2014
2532014
Magnon Valve Effect between Two Magnetic Insulators
XFH H. Wu, L. Huang, C. Fang, B. S. Yang, C. H. Wan, G. Q. Yu, J. F. Feng, H ...
PHYSICAL REVIEW LETTERS 120, 097205, 2018
1482018
Strain induced enhancement of perpendicular magnetic anisotropy in Co/graphene and Co/BN heterostructures
BS Yang, J Zhang, LN Jiang, WZ Chen, P Tang, XG Zhang, Y Yan, ...
Physical Review B 95 (17), 174424, 2017
1162017
A first-principles study on the magnetic properties of nonmetal atom doped phosphorene monolayers
H Zheng, J Zhang, B Yang, X Du, Y Yan
Physical Chemistry Chemical Physics 17 (25), 16341-16350, 2015
972015
Giant Enhancements of Perpendicular Magnetic Anisotropy and Spin‐Orbit Torque by a MoS2 Layer
Q Xie, W Lin, B Yang, X Shu, S Chen, L Liu, X Yu, MBH Breese, T Zhou, ...
Advanced Materials 31 (21), 1900776, 2019
832019
Curvature-enhanced spin-orbit coupling and spinterface effect in fullerene-based spin valves
S Liang, R Geng, B Yang, W Zhao, R Chandra Subedi, X Li, X Han, ...
Scientific reports 6 (1), 19461, 2016
722016
Large magnetic anisotropy and strain induced enhancement of magnetic anisotropy in monolayer TaTe 2
J Zhang, B Yang, H Zheng, X Han, Y Yan
Physical Chemistry Chemical Physics 19 (35), 24341-24347, 2017
582017
Emergent phenomena in magnetic two-dimensional materials and van der Waals heterostructures
Y Li, B Yang, S Xu, B Huang, W Duan
ACS Applied Electronic Materials 4 (7), 3278-3302, 2022
522022
Tuning the magnetism of a ZrS 2 monolayer by substitutional doping
B Yang, H Zheng, R Han, X Du, Y Yan
RSC Advances 4 (97), 54335-54343, 2014
522014
Giant enhancement of perpendicular magnetic anisotropy and induced quantum anomalous Hall effect in graphene/ heterostructures via tuning the van der …
Q Cui, J Liang, B Yang, Z Wang, P Li, P Cui, H Yang
Physical Review B 101 (21), 214439, 2020
502020
Nonmetallic atoms induced magnetic anisotropy in monolayer chromium trihalides
B Yang, X Zhang, H Yang, X Han, Y Yan
The Journal of Physical Chemistry C 123 (1), 691-697, 2018
482018
Strain controlling transport properties of heterostructure composed of monolayer CrI3
B Yang, X Zhang, H Yang, X Han, Y Yan
Applied Physics Letters 114 (19), 2019
402019
Perpendicular magnetic anisotropy and Dzyaloshinskii-Moriya interaction at an oxide/ferromagnetic metal interface
W Lin, B Yang, AP Chen, X Wu, R Guo, S Chen, L Liu, Q Xie, X Shu, Y Hui, ...
Physical Review Letters 124 (21), 217202, 2020
372020
Realization of semiconducting layered multiferroic heterojunctions via asymmetrical magnetoelectric coupling
B Yang, B Shao, J Wang, Y Li, CY Yam, S Zhang, B Huang
Physical Review B 103 (20), L201405, 2021
362021
Reversible control of Dzyaloshinskii-Moriya interaction at the graphene/Co interface via hydrogen absorption
B Yang, Q Cui, J Liang, M Chshiev, H Yang
Physical Review B 101 (1), 014406, 2020
312020
Ultrahigh tunneling magnetoresistance ratio in nitride based perpendicular magnetic tunnel junctions
B Yang, L Tao, L Jiang, W Chen, P Tang, Y Yan
Phys. Rev. Applied 9, 054019, 2018
312018
Four distinct resistive states in van der Waals full magnetic 1T-VSe2/CrI3/1T-VSe2 tunnel junction
F Li, B Yang, Y Zhu, X Han, Y Yan
Applied Surface Science 505, 144648, 2020
282020
Ultrahigh tunneling magnetoresistance in van der Waals and lateral magnetic tunnel junctions formed by intrinsic ferromagnets Li0. 5CrI3 and CrI3
F Li, B Yang, Y Zhu, X Han, Y Yan
Applied Physics Letters 117 (2), 2020
252020
First-principles study of perpendicular magnetic anisotropy in ferrimagnetic D22-Mn3X (X= Ga, Ge) on MgO and SrTiO3
BS Yang, LN Jiang, WZ Chen, P Tang, J Zhang, XG Zhang, Y Yan, ...
Applied Physics Letters 112 (14), 2018
252018
Tunable dielectric properties induced by optical fields in barium strontium titanate/manganite heterostructures
KX Jin, B Yang, Y Zhang, BC Luo, LY Chen, CL Chen
Scripta Materialia 112, 62-66, 2016
242016
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