Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates W Guo, Z Bryan, J Xie, R Kirste, S Mita, I Bryan, L Hussey, M Bobea, ...
Journal of Applied Physics 115 (10), 2014
72 2014 Direct observation of recombination-enhanced dislocation glide in heteroepitaxial GaAs on silicon PG Callahan, BB Haidet, D Jung, GGE Seward, K Mukherjee
Physical Review Materials 2 (8), 081601, 2018
52 2018 Sapphire decomposition and inversion domains in N-polar aluminum nitride L Hussey, RM White, R Kirste, S Mita, I Bryan, W Guo, K Osterman, ...
Applied Physics Letters 104 (3), 2014
39 2014 High temperature and low pressure chemical vapor deposition of silicon nitride on AlGaN: Band offsets and passivation studies P Reddy, S Washiyama, F Kaess, M Hayden Breckenridge, ...
Journal of Applied Physics 119 (14), 2016
32 2016 Growth and Magnetotransport in Thin‐Film α‐Sn on CdTe O Vail, P Taylor, P Folkes, B Nichols, B Haidet, K Mukherjee, G de Coster
physica status solidi (b) 257 (1), 1800513, 2020
28 2020 Interface structure and luminescence properties of epitaxial PbSe films on InAs (111) A BB Haidet, L Nordin, AJ Muhowski, KD Vallejo, ET Hughes, J Meyer, ...
Journal of Vacuum Science & Technology A 39 (2), 2021
24 2021 Nucleation control and interface structure of rocksalt PbSe on (001) zincblende III-V surfaces BB Haidet, ET Hughes, K Mukherjee
Physical Review Materials 4 (3), 033402, 2020
24 2020 Nonlinear analysis of vanadium-and titanium-based contacts to Al-rich n-AlGaN BB Haidet, B Sarkar, P Reddy, I Bryan, Z Bryan, R Kirste, R Collazo, ...
Japanese Journal of Applied Physics 56 (10), 100302, 2017
24 2017 Performance improvement of ohmic contacts on Al-rich n-AlGaN grown on single crystal AlN substrate using reactive ion etching surface treatment B Sarkar, BB Haidet, P Reddy, R Kirste, R Collazo, Z Sitar
Applied Physics Express 10 (7), 071001, 2017
20 2017 A conduction model for contacts to Si-doped AlGaN grown on sapphire and single-crystalline AlN BB Haidet, I Bryan, P Reddy, Z Bryan, R Collazo, Z Sitar
Journal of Applied Physics 117 (24), 2015
15 2015 Pipe-diffusion-enriched dislocations and interfaces in SnSe/PbSe heterostructures ET Hughes, BB Haidet, B Bonef, W Cai, K Mukherjee
Physical Review Materials 5 (7), 073402, 2021
9 2021 Plasma enhanced chemical vapor deposition of SiO2 and SiNx on AlGaN: Band offsets and interface studies as a function of Al composition P Reddy, S Washiyama, W Mecouch, LH Hernandez-Balderrama, ...
Journal of Vacuum Science & Technology A 36 (6), 2018
8 2018 Bright mid-infrared photoluminescence from high dislocation density epitaxial PbSe films on GaAs J Meyer, AJ Muhowski, L Nordin, E Hughes, B Haidet, D Wasserman, ...
APL Materials 9 (11), 2021
7 2021 Development of lattice-mismatched gainasp for radiation hardness RM France, P Espinet-Gonzalez, BB Haidet, K Mukherjee, HL Guthrey, ...
IEEE Journal of Photovoltaics 10 (1), 103-108, 2019
7 2019 Material considerations for the development of III-nitride power devices B Sarkar, P Reddy, F Kaess, B Haidet, J Tweedie, S Mita, R Kirste, E Kohn, ...
ECS Transactions 80 (7), 29, 2017
7 2017 Epitaxial Integration and Defect Structure of Layered SnSe Films on PbSe/III–V Substrates BB Haidet, E Hughes, K Mukherjee
Crystal Growth & Design 22 (6), 3824-3833, 2022
6 2022 Versatile strain relief pathways in epitaxial films of PbSe on III-V substrates BB Haidet, J Meyer, P Reddy, ET Hughes, K Mukherjee
Physical Review Materials 7 (2), 024602, 2023
1 2023 Advances in heteroepitaxial integration of III-V and IV-VI semiconductors with electron channeling contrast imaging E Hughes, B Haidet, B Bonef, J Selvidge, C Shang, J Norman, J Bowers, ...
Microscopy and Microanalysis 27 (S1), 908-910, 2021
2021 Heteroepitaxy and defect characterization in infrared III-V and IV-VI semiconductors B Haidet
University of California, Santa Barbara, 2021
2021 On contacts to III-nitride deep-UV emitters B Sarkar, P Reddy, A Klump, R Rounds, MR Breckenridge, BB Haidet, ...
2018 3rd International Conference on Microwave and Photonics (ICMAP), 1-2, 2018
2018