| Self-Selective Multi-Terminal Memtransistor Crossbar Array for In-Memory Computing X Feng, S Li, SL Wong, S Tong, L Chen, P Zhang, L Wang, X Fong, D Chi, ... ACS nano, 2021 | 124 | 2021 |
| A review for compact model of graphene field-effect transistors N Lu, L Wang, L Li, M Liu Chinese Physics B 26 (3), 036804, 2017 | 52 | 2017 |
| Progress in flexible organic thin-film transistors and integrated circuits C Lu, Z Ji, G Xu, W Wang, L Wang, Z Han, L Li, M Liu Science Bulletin 61 (14), 1081-1096, 2016 | 42 | 2016 |
| A new surface potential and physics based compact model for a-IGZO TFTs at multinanoscale for high retention and low-power DRAM application J Guo, K Han, S Subhechha, X Duan, Q Chen, D Geng, S Huang, L Xu, ... 2021 IEEE International Electron Devices Meeting (IEDM), 8.5. 1-8.5. 4, 2021 | 28 | 2021 |
| Analytical carrier density and quantum capacitance for graphene L Wang, W Wang, G Xu, Z Ji, N Lu, L Li, M Liu Applied Physics Letters 108 (1), 2016 | 28 | 2016 |
| A physics-based compact model for transition-metal dichalcogenides transistors with the band-tail effect L Wang, Y Li, X Gong, AVY Thean, G Liang IEEE Electron Device Letters 39 (5), 761-764, 2018 | 22 | 2018 |
| Scaling Dual-Gate Ultra-thin a-IGZO FET to 30 nm Channel Length with Record-high Gm,max of 559 µS/µm at VDS=1 V, Record-low DIBL of 10 mV/V and Nearly … K Chen, J Niu, G Yang, M Liu, W Lu, F Liao, K Huang, XL Duan, C Lu, ... 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022 | 21 | 2022 |
| Investigation of asymmetric characteristics of novel vertical channel-all-around (CAA) In-Ga-Zn-O field effect transistors Q Chen, L Wang, X Duan, J Guo, Z Wang, K Huang, J Feng, Y Sun, G Jiao, ... IEEE Electron Device Letters 43 (6), 894-897, 2022 | 19 | 2022 |
| Surface-potential-based physical compact model for graphene field effect transistor L Wang, S Peng, W Wang, G Xu, Z Ji, N Lu, L Li, Z Jin, M Liu Journal of Applied Physics 120 (8), 2016 | 17 | 2016 |
| Compact Modeling of IGZO-based CAA-FETs with Time-zero-instability and BTI Impact on Device and Capacitor-less DRAM Retention Reliability J Guo, Y Sun, L Wang, X Duan, K Huang, Z Wang, J Feng, Q Chen, ... 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022 | 15 | 2022 |
| A unified surface potential based physical compact model for both unipolar and ambipolar 2D-FET: Experimental verification and circuit demonstration L Wang, Y Li, X Feng, KW Ang, X Gong, A Thean, G Liang 2017 IEEE International Electron Devices Meeting (IEDM), 31.4. 1-31.4. 4, 2017 | 14 | 2017 |
| Geometric variability aware quantum potential based quasi-ballistic compact model for stacked 6 nm-thick silicon nanosheet GAA-FETs S Huang, Z Wu, H Xu, J Guo, L Xu, XL Duan, Q Chen, G Yang, Q Zhang, ... 2021 IEEE International Electron Devices Meeting (IEDM), 18.5. 1-18.5. 4, 2021 | 13 | 2021 |
| A hardware neural network for handwritten digits recognition using binary RRAM as synaptic weight element W Wang, Y Li, M Wang, L Wang, Q Liu, W Banerjee, L Li, M Liu 2016 IEEE Silicon Nanoelectronics Workshop (SNW), 50-51, 2016 | 12 | 2016 |
| Overview of emerging semiconductor device model methodologies: From device physics to machine learning engines X Li, Z Wu, G Rzepa, M Karner, H Xu, Z Wu, W Wang, G Yang, Q Luo, ... Fundamental Research, 2024 | 10 | 2024 |
| MOSFET physics-based compact model mass-produced: An artificial neural network approach S Huang, L Wang Micromachines 14 (2), 386, 2023 | 10 | 2023 |
| A surface potential based compact model for ferroelectric a-InGaZnO-TFTs toward temperature dependent device characterization L Xu, J Guo, C Sun, Z Zheng, Y Xu, S Huang, K Han, W Wei, Z Guo, ... IEEE Electron Device Letters 44 (3), 412-415, 2023 | 10 | 2023 |
| A surface potential based compact model for two-dimensional field effect transistors with disorders induced transition behaviors L Wang, Y Li, X Feng, KW Ang, X Gong, AVY Thean, G Liang Journal of Applied Physics 124 (3), 2018 | 10 | 2018 |
| A unified physical BTI compact model in variability-aware DTCO flow: Device characterization and circuit evaluation on reliability of scaling technology nodes Y Zhao, L Wang, Z Wu, F Schanovsky, X Xu, H Yang, H Yu, J Lai, D Liu, ... 2021 Symposium on VLSI Technology, 1-2, 2021 | 9 | 2021 |
| Percolation theory based statistical resistance model for resistive random access memory L Wang, AVY Thean, G Liang Applied Physics Letters 112 (25), 2018 | 6 | 2018 |
| An improved cut-off frequency model with a modified small-signal equivalent circuit in graphene field-effect transistors L Wang, L Li, N Lu, Z Ji, W Wang, Z Zong, G Xu, M Liu IEEE Electron Device Letters 36 (12), 1351-1354, 2015 | 6 | 2015 |
Wei WangScientist, Peng Cheng LaboratoryBestätigte E-Mail-Adresse bei pcl.ac.cn
