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Marcelo Fabian Goffman
Marcelo Fabian Goffman
Quantronics group
Bestätigte E-Mail-Adresse bei cea.fr
Titel
Zitiert von
Zitiert von
Jahr
First order phase transition at the irreversibility line of
H Pastoriza, MF Goffman, A Arribere, F De La Cruz
Physical review letters 72 (18), 2951, 1994
3121994
Coherent manipulation of Andreev states in superconducting atomic contacts
C Janvier, L Tosi, L Bretheau, ÇÖ Girit, M Stern, P Bertet, P Joyez, D Vion, ...
Science 349 (6253), 1199-1202, 2015
2792015
Optoelectronic switch and memory devices based on polymer‐functionalized carbon nanotube transistors
J Borghetti, V Derycke, S Lenfant, P Chenevier, A Filoramo, M Goffman, ...
Advanced materials 18 (19), 2535-2540, 2006
1922006
Multiple-charge-quanta shot noise in superconducting atomic contacts
R Cron, MF Goffman, D Esteve, C Urbina
Physical review letters 86 (18), 4104, 2001
1812001
Spin-orbit splitting of Andreev states revealed by microwave spectroscopy
L Tosi, C Metzger, MF Goffman, C Urbina, H Pothier, S Park, AL Yeyati, ...
Physical Review X 9 (1), 011010, 2019
1802019
Chemical optimization of self-assembled carbon nanotube transistors
S Auvray, V Derycke, M Goffman, A Filoramo, O Jost, JP Bourgoin
Nano Letters 5 (3), 451-455, 2005
1662005
Tunneling spectroscopy of a single quantum dot coupled to a superconductor: From Kondo ridge to Andreev bound states
JD Pillet, P Joyez, R Žitko, MF Goffman
Physical Review B—Condensed Matter and Materials Physics 88 (4), 045101, 2013
1602013
Intrinsic current gain cutoff frequency of 30GHz with carbon nanotube transistors
A Le Louarn, F Kapche, JM Bethoux, H Happy, G Dambrine, V Derycke, ...
Applied physics letters 90 (23), 2007
1482007
Self-assembled switches based on electroactuated multiwalled nanotubes
E Dujardin, V Derycke, MF Goffman, R Lefevre, JP Bourgoin
Applied Physics Letters 87 (19), 2005
1412005
Gigahertz frequency flexible carbon nanotube transistors
N Chimot, V Derycke, MF Goffman, JP Bourgoin, H Happy, G Dambrine
Applied physics letters 91 (15), 2007
1292007
Synthesis of thin and highly conductive DNA‐based palladium nanowires
K Nguyen, M Monteverde, A Filoramo, L Goux‐Capes, S Lyonnais, ...
Advanced Materials 20 (6), 1099-1104, 2008
1242008
Supercurrent in atomic point contacts and Andreev states
MF Goffman, R Cron, AL Yeyati, P Joyez, MH Devoret, D Esteve, C Urbina
Physical review letters 85 (1), 170, 2000
1132000
Fabrication and characterization of sub-3 nm gaps for single-cluster and single-molecule experiments
MF Lambert, MF Goffman, JP Bourgoin, P Hesto
Nanotechnology 14 (7), 772, 2003
852003
An 8-GHz f/sub t/carbon nanotube field-effect transistor for gigahertz range applications
JM Bethoux, H Happy, G Dambrine, V Derycke, M Goffman, JP Bourgoin
IEEE Electron Device Letters 27 (8), 681-683, 2006
822006
Vortex phase diagram of -axis superconducting correlation in the different vortex phases
MF Goffman, JA Herbsommer, F De la Cruz, TW Li, PH Kes
Physical Review B 57 (6), 3663, 1998
801998
Conduction channels of an InAs-Al nanowire Josephson weak link
MF Goffman, C Urbina, H Pothier, J Nygård, CM Marcus, P Krogstrup
New Journal of Physics 19 (9), 092002, 2017
642017
Carbon nanotube transistor optimization by chemical control of the nanotube–metal interface
S Auvray, J Borghetti, MF Goffman, A Filoramo, V Derycke, JP Bourgoin, ...
Applied physics letters 84 (25), 5106-5108, 2004
612004
Optically-configurable nanotube or nanowire semiconductor device
J Borghetti, JP Bourgoin, P Mordant, V Derycke, A Filoramo, M Goffman
US Patent 7,323,730, 2008
572008
Scaling law in carbon nanotube electromechanical devices
R Lefèvre, MF Goffman, V Derycke, C Miko, L Forró, JP Bourgoin, P Hesto
Physical review letters 95 (18), 185504, 2005
562005
Carbon nanotube chemistry and assembly for electronic devices
V Derycke, S Auvray, J Borghetti, CL Chung, R Lefèvre, ...
Comptes Rendus Physique 10 (4), 330-347, 2009
432009
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