Deep-level characterization in GaN HEMTs-Part I: Advantages and limitations of drain current transient measurements D Bisi, M Meneghini, C De Santi, A Chini, M Dammann, P Brueckner, ...
IEEE Transactions on electron devices 60 (10), 3166-3175, 2013
446 2013 Buffer traps in Fe-doped AlGaN/GaN HEMTs: Investigation of the physical properties based on pulsed and transient measurements M Meneghini, I Rossetto, D Bisi, A Stocco, A Chini, A Pantellini, C Lanzieri, ...
IEEE Transactions on Electron Devices 61 (12), 4070-4077, 2014
194 2014 Reliability and parasitic issues in GaN-based power HEMTs: A review G Meneghesso, M Meneghini, I Rossetto, D Bisi, S Stoffels, M Van Hove, ...
Semiconductor Science and Technology 31 (9), 093004, 2016
159 2016 Temperature-Dependent Dynamic M Meneghini, P Vanmeerbeek, R Silvestri, S Dalcanale, A Banerjee, ...
IEEE transactions on electron devices 62 (3), 782-787, 2015
140 2015 Trapping phenomena in AlGaN/GaN HEMTs: A study based on pulsed and transient measurements G Meneghesso, M Meneghini, D Bisi, I Rossetto, A Cester, UK Mishra, ...
Semiconductor science and technology 28 (7), 074021, 2013
129 2013 Negative bias-induced threshold voltage instability in GaN-on-Si power HEMTs M Meneghini, I Rossetto, D Bisi, M Ruzzarin, M Van Hove, S Stoffels, ...
IEEE Electron Device Letters 37 (4), 474-477, 2016
127 2016 Kinetics of Buffer-Related RON -Increase in GaN-on-Silicon MIS-HEMTs D Bisi, M Meneghini, FA Marino, D Marcon, S Stoffels, M Van Hove, ...
IEEE Electron Device Letters 35 (10), 1004-1006, 2014
127 2014 Trapping and reliability assessment in D-mode GaN-based MIS-HEMTs for power applications M Meneghini, D Bisi, D Marcon, S Stoffels, M Van Hove, TL Wu, ...
IEEE Transactions on Power Electronics 29 (5), 2199-2207, 2013
109 2013 Trapping mechanisms in GaN‐based MIS‐HEMTs grown on silicon substrate D Bisi, M Meneghini, M Van Hove, D Marcon, S Stoffels, TL Wu, ...
physica status solidi (a) 212 (5), 1122-1129, 2015
99 2015 Trapping in GaN-based metal-insulator-semiconductor transistors: Role of high drain bias and hot electrons M Meneghini, D Bisi, D Marcon, S Stoffels, M Van Hove, TL Wu, ...
Applied Physics Letters 104 (14), 2014
84 2014 Degradation of AlGaN/GaN HEMT devices: Role of reverse-bias and hot electron stress G Meneghesso, M Meneghini, A Stocco, D Bisi, C de Santi, I Rossetto, ...
Microelectronic engineering 109, 257-261, 2013
75 2013 On trapping mechanisms at oxide-traps in Al2O3/GaN metal-oxide-semiconductor capacitors D Bisi, SH Chan, X Liu, R Yeluri, S Keller, M Meneghini, G Meneghesso, ...
Applied Physics Letters 108 (11), 2016
58 2016 Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate G Meneghesso, M Meneghini, D Bisi, I Rossetto, TL Wu, M Van Hove, ...
Microelectronics Reliability 58, 151-157, 2016
52 2016 Hot-electron degradation of AlGaN/GaN high-electron mobility transistors during RF operation: Correlation with GaN buffer design D Bisi, A Chini, F Soci, A Stocco, M Meneghini, A Pantellini, A Nanni, ...
IEEE Electron Device Letters 36 (10), 1011-1014, 2015
50 2015 1200V GaN switches on sapphire substrate G Gupta, M Kanamura, B Swenson, D Bisi, B Romanczyk, C Neufeld, ...
2022 IEEE 34th International Symposium on Power Semiconductor Devices and …, 2022
45 2022 Reliability and failure physics of GaN HEMT, MIS-HEMT and p-gate HEMTs for power switching applications: Parasitic effects and degradation due to deep level effects and time … E Zanoni, M Meneghini, G Meneghesso, D Bisi, I Rossetto, A Stocco
2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2015
45 2015 Improved Dynamic RON of GaN Vertical Trench MOSFETs (OG-FETs) Using TMAH Wet Etch D Ji, W Li, A Agarwal, SH Chan, J Haller, D Bisi, M Labrecque, C Gupta, ...
IEEE Electron Device Letters 39 (7), 1030-1033, 2018
38 2018 High-voltage double-pulsed measurement system for GaN-based power HEMTs D Bisi, A Stocco, M Meneghini, F Rampazzo, A Cester, G Meneghesso, ...
2014 IEEE International Reliability Physics Symposium, CD. 11.1-CD. 11.4, 2014
36 2014 Metalorganic chemical vapor deposition and characterization of (Al, Si) O dielectrics for GaN-based devices SH Chan, M Tahhan, X Liu, D Bisi, C Gupta, O Koksaldi, H Li, T Mates, ...
Japanese Journal of Applied Physics 55 (2), 021501, 2016
32 2016 Proton induced trapping effect on space compatible GaN HEMTs A Stocco, S Gerardin, D Bisi, S Dalcanale, F Rampazzo, M Meneghini, ...
Microelectronics Reliability 54 (9-10), 2213-2216, 2014
31 2014 
Enrico ZanoniProfessor, Electronics, University of PadovaBestätigte E-Mail-Adresse bei dei.unipd.it