Comprehensive Schottky barrier height behavior and reliability instability with Ni/Au and Pt/Ti/Pt/Au on AlGaN/GaN high-electron-mobility transistors S Chakraborty, TW Kim
Micromachines 13 (1), 84, 2022
22 2022 Explicit Thermal Resistance Model of Self-Heating Effects of AlGaN/GaN HEMTs with Linear and Non-Linear Thermal Conductivity S Chakraborty, W Amir, JW Shin, KY Shin, CY Cho, JM Kim, T Hoshi, ...
Materials 15 (23), 8415, 2022
11 2022 Performance enhancement of AlGaN/GaN HEMT via trap-state improvement using O2 plasma treatment W Amir, JW Shin, KY Shin, S Chakraborty, CY Cho, JM Kim, ST Lee, ...
IEEE Transactions on Electron Devices 70 (6), 2988-2993, 2023
10 2023 Investigation of mean-time-to-failure measurements from AlGaN/GaN high-electron-mobility transistors using Eyring model S Chakraborty, TW Kim
Electronics 10 (24), 3052, 2021
6 2021 Reliability Assessment of On-Wafer AlGaN/GaN HEMTs: The Impact of Electric Field Stress on the Mean Time to Failure S Chakraborty, TW Kim
Micromachines 14 (10), 1833, 2023
3 2023 Trap Behavior of Metamorphic HEMTs with Pulsed IV and KY Shin, JW Shin, S Chakraborty, W Amir, CS Shin, TW Kim
ESSDERC 2022-IEEE 52nd European Solid-State Device Research Conference …, 2022
3 2022 New Methodology for Parasitic Resistance Extraction and Capacitance Correction in RF AlGaN/GaN High Electron Mobility Transistors S Chakraborty, W Amir, HM Kwon, TW Kim
Electronics 12 (14), 3044, 2023
2 2023 Impact of Charge-Trapping Effects on Reliability Instability in Alx Ga1−x N/GaN High-Electron-Mobility Transistors with Various Al Compositions W Amir, S Chakraborty, HM Kwon, TW Kim
Materials 16 (12), 4469, 2023
2 2023 An Explicit Thermal Resistance Model Regarding Self-Heating Effect of AlGaN/GaN High Electron Mobility Transistor S Chakraborty, JW Shin, W Amir, KY Shin, TW Kim
Materials Science Forum 1074, 125-131, 2022
2 2022 Precise channel temperature prediction in AlGaN/GaN HEMTs via closed-form empirical expression S Chakraborty, JW Shin, W Amir, KY Shin, T Hoshi, T Tsutsumi, ...
Solid-State Electronics 210, 108788, 2023
1 2023 Reliability Instability Assessment with Interfacial Trapping Analysis for the Optimization of Al Composition in Alx 1−x N/GaN High Electron Mobility Transistors W Amir, JW Shin, S Chakraborty, KY Shin, T Hoshi, T Tsutsumi, ...
physica status solidi (a) 221 (13), 2300597, 2024
2024 Effect of stress voltage and temperature on the reliability of AlGaN/GaN HEMTs for RF and Microwave application S Chakraborty, W Amir, T Hoshi, T Tsutsumi, H Sugiyama, TW Kim
physica status solidi (a), 2023
2023 Effect of Trap Behavior on the Reliability Instability of Metamorphic Buffer in InAlAs/InGaAs MHEMT on GaAs KY Shin, JW Shin, W Amir, S Chakraborty, JP Shim, ST Lee, H Jang, ...
Materials 16 (18), 6138, 2023
2023 
Taewoo KimTexas Tech UniversityBestätigte E-Mail-Adresse bei ttu.edu