Few-Layer MoS2 p -Type Devices Enabled by Selective Doping Using Low Energy Phosphorus Implantation A Nipane, D Karmakar, N Kaushik, S Karande, S Lodha
ACS nano 10 (2), 2128-2137, 2016
403 2016 Modulation-doped β-(Al0. 2Ga0. 8) 2O3/Ga2O3 field-effect transistor S Krishnamoorthy, Z Xia, C Joishi, Y Zhang, J McGlone, J Johnson, ...
Applied Physics Letters 111 (2), 2017
336 2017 Schottky barrier heights for Au and Pd contacts to MoS2 N Kaushik, A Nipane, F Basheer, S Dubey, S Grover, MM Deshmukh, ...
Applied Physics Letters 105 (11), 2014
300 2014 High performance 32nm logic technology featuring 2nd generation high-k + metal gate transistors P Packan, S Akbar, M Armstrong, D Bergstrom, M Brazier, H Deshpande, ...
2009 IEEE international electron devices meeting (IEDM), 1-4, 2009
294 2009 A 32nm logic technology featuring 2nd -generation high-k + metal-gate transistors, enhanced channel strain and 0.171μm2 SRAM cell size in a 291Mb array S Natarajan, M Armstrong, M Bost, R Brain, M Brazier, CH Chang, ...
2008 IEEE International Electron Devices Meeting, 1-3, 2008
288 2008 Near-Direct Bandgap WSe2/ReS2 Type-II pn Heterojunction for Enhanced Ultrafast Photodetection and High-Performance Photovoltaics A Varghese, D Saha, K Thakar, V Jindal, S Ghosh, N Medhekar, S Ghosh, ...
Nano Letters 20 (3), 1707-1717, 2020
205 2020 Demonstration of β-(AlxGa1-x) 2O3/Ga2O3 double heterostructure field effect transistors Y Zhang, C Joishi, Z Xia, M Brenner, S Lodha, S Rajan
Applied physics letters 112 (23), 2018
187 2018 2 O3 Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHzZ Xia, H Xue, C Joishi, J Mcglone, NK Kalarickal, SH Sohel, M Brenner, ...
IEEE Electron Device Letters 40 (7), 1052-1055, 2019
171 2019 Low-pressure CVD-grown β-Ga2O3 bevel-field-plated Schottky barrier diodes C Joishi, S Rafique, Z Xia, L Han, S Krishnamoorthy, Y Zhang, S Lodha, ...
Applied Physics Express 11 (3), 031101, 2018
168 2018 Delta Doped Z Xia, C Joishi, S Krishnamoorthy, S Bajaj, Y Zhang, M Brenner, S Lodha, ...
IEEE Electron Device Letters 39 (4), 568-571, 2018
158 2018 Interfacial n-Doping Using an Ultrathin TiO2 Layer for Contact Resistance Reduction in MoS2 N Kaushik, D Karmakar, A Nipane, S Karande, S Lodha
ACS applied materials & interfaces 8 (1), 256-263, 2016
153 2016 Fermi-level unpinning and low resistivity in contacts to n-type Ge with a thin ZnO interfacial layer P Paramahans Manik, R Kesh Mishra, V Pavan Kishore, P Ray, A Nainani, ...
Applied Physics Letters 101 (18), 2012
137 2012 Contact resistivity reduction through interfacial layer doping in metal-interfacial layer-semiconductor contacts S Gupta, P Paramahans Manik, R Kesh Mishra, A Nainani, MC Abraham, ...
Journal of Applied Physics 113 (23), 2013
125 2013 Optoelectronic and photonic devices based on transition metal dichalcogenides K Thakar, S Lodha
Materials Research Express 7 (1), 014002, 2020
124 2020 Trapping Effects in Si2 O3 MESFETs on an Fe-Doped2 O3 Substrate JF McGlone, Z Xia, Y Zhang, C Joishi, S Lodha, S Rajan, SA Ringel, ...
IEEE Electron Device Letters 39 (7), 1042-1045, 2018
115 2018 Punchthrough-diode-based bipolar RRAM selector by Si epitaxy VSS Srinivasan, S Chopra, P Karkare, P Bafna, S Lashkare, P Kumbhare, ...
IEEE Electron Device Letters 33 (10), 1396-1398, 2012
115 2012 Breakdown Characteristics of 0.22 Ga0.78 )2 O3 /Ga2 O3 Field-Plated Modulation-Doped Field-Effect Transistors C Joishi, Y Zhang, Z Xia, W Sun, AR Arehart, S Ringel, S Lodha, S Rajan
IEEE Electron Device Letters 40 (8), 1241-1244, 2019
114 2019 Reversible hysteresis inversion in MoS2 field effect transistors N Kaushik, DMA Mackenzie, K Thakar, N Goyal, B Mukherjee, P Boggild, ...
npj 2D Materials and Applications 1 (1), 34, 2017
112 2017 Multilayer ReS2 Photodetectors with Gate Tunability for High Responsivity and High-Speed Applications K Thakar, B Mukherjee, S Grover, N Kaushik, M Deshmukh, S Lodha
ACS applied materials & interfaces 10 (42), 36512-36522, 2018
102 2018 Enhanced responsivity and detectivity of fast WSe2 phototransistor using electrostatically tunable in-plane lateral p-n homojunction S Ghosh, A Varghese, K Thakar, S Dhara, S Lodha
Nature communications 12 (1), 3336, 2021
97 2021 
Chandan JoishiResearch Scientist, The Ohio State UniversityBestätigte E-Mail-Adresse bei osu.edu