Batch-fabricated high-performance graphene Hall elements H Xu, Z Zhang, R Shi, H Liu, Z Wang, S Wang, LM Peng
Scientific reports 3 (1), 1207, 2013
113 2013 High RF Performance Enhancement-Mode Al2 O3 /AlGaN/GaN MIS-HEMTs Fabricated With High-Temperature Gate-Recess Technique S Huang, X Liu, J Zhang, K Wei, G Liu, X Wang, Y Zheng, H Liu, Z Jin, ...
IEEE Electron Device Letters 36 (8), 754-756, 2015
65 2015 Kinetic study of GeO disproportionation into a GeO2/Ge system using x-ray photoelectron spectroscopy S Kai Wang, HG Liu, A Toriumi
Applied Physics Letters 101 (6), 2012
60 2012 High-temperature low-damage gate recess technique and ozone-assisted ALD-grown Al2 O3 gate dielectric for high-performance normally-off GaN MIS-HEMTs S Huang, Q Jiang, K Wei, G Liu, J Zhang, X Wang, Y Zheng, B Sun, ...
2014 IEEE International Electron Devices Meeting, 17.4. 1-17.4. 4, 2014
53 2014 Surface recombination currents in" Type-II" NpN InP-GaAsSb-InP self-aligned DHBTs NGM Tao, H Liu, CR Bolognesi
IEEE transactions on electron devices 52 (6), 1061-1066, 2005
44 2005 600 GHz InP/GaAsSb/InP DHBTs Grown by MOCVD with a Ga(As,Sb) Graded-Base and fT x BVCEO ≫ 2.5 THz-V at Room Temperature HG Liu, O Ostinelli, Y Zeng, CR Bolognesi
2007 IEEE International Electron Devices Meeting, 667-670, 2007
43 2007 15-nm base type-II InP/GaAsSb/InP DHBTs with F/sub T/= 384 GHz and a 6-V BV/sub CEO HG Liu, SP Watkins, CR Bolognesi
IEEE transactions on electron devices 53 (3), 559-561, 2006
39 2006 Extraction of the average collector velocity in high-speed" Type-II" InP-GaAsSb-InP DHBTs HG Liu, N Tao, SP Watkins, CR Bolognesi
IEEE electron device letters 25 (12), 769-771, 2004
37 2004 A modified wrinkle-free MoS2 film transfer method for large area high mobility field-effect transistor X Liu, K Huang, M Zhao, F Li, H Liu
Nanotechnology 31 (5), 055707, 2019
33 2019 Scalable Fabrication of Ambipolar Transistors and Radio‐Frequency Circuits Using Aligned Carbon Nanotube Arrays Z Wang, S Liang, Z Zhang, H Liu, H Zhong, LH Ye, S Wang, W Zhou, J Liu, ...
Advanced Materials 26 (4), 645-652, 2014
33 2014 Physical modeling based on hydrodynamic simulation for the design of InGaAs/InP double heterojunction bipolar transistors J Ge, HG Liu, YB Su, YX Cao, Z Jin
Chinese Physics B 21 (5), 058501, 2012
32 2012 High-Current-Gain InP/GaInP/GaAsSb/InP DHBTs With HG Liu, O Ostinelli, YP Zeng, CR Bolognesi
IEEE electron device letters 28 (10), 852-855, 2007
28 2007 Impact of surface state modeling on the characteristics of InP/GaAsSb/InP DHBTs NG Tao, HG Liu, CR Bolognesi
Solid-state electronics 51 (6), 995-1001, 2007
26 2007 High performance GaN-based LEDs on patterned sapphire substrate with patterned composite SiO2 /Al2 O3 passivation layers and TiO2 /Al2 O3 DBR backside … H Guo, X Zhang, H Chen, P Zhang, H Liu, H Chang, W Zhao, Q Liao, ...
Optics Express 21 (18), 21456-21465, 2013
25 2013 High-performance InP/GaAsSb/InP DHBTs grown by MOCVD on 100 mm InP substrates using PH3 and AsH3 HG Liu, JQ Wu, N Tao, AV Firth, EM Griswold, TW MacElwee, ...
Journal of crystal growth 267 (3-4), 592-597, 2004
24 2004 Enhanced performance of GaN-based light-emitting diodes by using Al mirror and atomic layer deposition-TiO2/Al2O3 distributed Bragg reflector backside reflector with patterned … H Chen, H Guo, P Zhang, X Zhang, H Liu, S Wang, Y Cui
Appl. Phys. Express 6 (2), 022101-1-022101-4, 2013
23 2013 The impact of HCl precleaning and sulfur passivation on the Al2O3/Ge interface in Ge metal-oxide-semiconductor capacitors BQ Xue, HD Chang, B Sun, SK Wang, HG Liu
Chinese Physics Letters 29 (4), 046801, 2012
22 2012 Comparative technology assessment of future InP HBT ultrahigh-speed digital circuits JM Ruiz-Palmero, U Hammer, H Jäckel, H Liu, CR Bolognesi
Solid-state electronics 51 (6), 842-859, 2007
22 2007 Al2O3/GeOx gate stack on germanium substrate fabricated by in situ cycling ozone oxidation method X Yang, SK Wang, X Zhang, B Sun, W Zhao, HD Chang, ZH Zeng, H Liu
Applied Physics Letters 105 (9), 2014
21 2014 Hf₀. ₅Zr₀. ₅O₂ Ferroelectric Embedded Dual-Gate MoS₂ Field Effect Transistors for Memory Merged Logic Applications K Huang, M Zhai, X Liu, B Sun, H Chang, J Liu, C Feng, H Liu
IEEE Electron Device Letters 41 (10), 1600-1603, 2020
19 2020 
Prof. Dr. Colombo BolognesiETH Zurich, Chair, Millimeter-Wave ElectronicsBestätigte E-Mail-Adresse bei mwe.ee.ethz.ch
