| Flexible low-temperature polycrystalline silicon thin-film transistors TC Chang, YC Tsao, PH Chen, MC Tai, SP Huang, WC Su, GF Chen Materials Today Advances 5, 100040, 2020 | 83 | 2020 |
| Attaining resistive switching characteristics and selector properties by varying forming polarities in a single HfO2-based RRAM device with a vanadium electrode CY Lin, PH Chen, TC Chang, KC Chang, SD Zhang, TM Tsai, CH Pan, ... Nanoscale 9 (25), 8586-8590, 2017 | 75 | 2017 |
| Adaptive synaptic memory via lithium ion modulation in RRAM devices CY Lin, J Chen, PH Chen, TC Chang, Y Wu, JK Eshraghian, J Moon, ... Small 16 (42), 2003964, 2020 | 66 | 2020 |
| Bulk Oxygen–Ion Storage in Indium–Tin–Oxide Electrode for Improved Performance of HfO2-Based Resistive Random Access Memory PH Chen, KC Chang, TC Chang, TM Tsai, CH Pan, TJ Chu, MC Chen, ... IEEE Electron Device Letters 37 (3), 280-283, 2016 | 51 | 2016 |
| Integrated design and realization of a hubless rim-driven thruster MF Hsieh, JH Chen, YH Yeh, CL Lee, PH Chen, YC Hsu, YH Chen IECON 2007-33rd Annual Conference of the IEEE Industrial Electronics Society …, 2007 | 48 | 2007 |
| A method to reduce forming voltage without degrading device performance in hafnium oxide-based 1T1R resistive random access memory YT Su, HW Liu, PH Chen, TC Chang, TM Tsai, TJ Chu, CH Pan, CH Wu, ... IEEE Journal of the Electron Devices Society 6, 341-345, 2018 | 47 | 2018 |
| Stabilizing Resistive Switching Characteristics by Inserting Indium-Tin-Oxide Layer as Oxygen Ion Reservoir in HfO2-Based Resistive Random Access Memory PH Chen, YT Su, FC Chang IEEE Transactions on Electron Devices 66 (3), 1276-1280, 2019 | 44 | 2019 |
| Resistive switching mechanism of oxygen-rich indium tin oxide resistance random access memory TM Tsai, KC Chang, TC Chang, R Zhang, T Wang, CH Pan, KH Chen, ... IEEE Electron Device Letters 37 (4), 408-411, 2016 | 40 | 2016 |
| Low operation voltage of nitride-based LEDs with Al-doped ZnO transparent contact layer CH Kuo, CL Yeh, PH Chen, WC Lai, CJ Tun, JK Sheu, GC Chi Electrochemical and Solid-State Letters 11 (9), H269, 2008 | 39 | 2008 |
| Galvanic effect of Au–Ag electrodes for conductive bridging resistive switching memory CC Kuo, IC Chen, CC Shih, KC Chang, CH Huang, PH Chen, TC Chang, ... IEEE Electron Device Letters 36 (12), 1321-1324, 2015 | 38 | 2015 |
| The demonstration of increased selectivity during experimental measurement in filament-type vanadium oxide-based selector CK Chen, CY Lin, PH Chen, TC Chang, CC Shih, YT Tseng, HX Zheng, ... IEEE Transactions on Electron Devices 65 (10), 4622-4627, 2018 | 34 | 2018 |
| Resistance Switching Characteristics Induced by O2 Plasma Treatment of an Indium Tin Oxide Film for Use as an Insulator in Resistive Random Access Memory PH Chen, TC Chang, KC Chang, TM Tsai, CH Pan, MC Chen, YT Su, ... ACS Applied Materials & Interfaces 9 (3), 3149-3155, 2017 | 34 | 2017 |
| Investigation of the capacitance–voltage electrical characteristics of thin-film transistors caused by hydrogen diffusion under negative bias stress in a moist environment HC Chen, CW Kuo, TC Chang, WC Lai, PH Chen, GF Chen, SP Huang, ... ACS applied materials & interfaces 11 (43), 40196-40203, 2019 | 30 | 2019 |
| Improving Performance by Doping Gadolinium Into the Indium-Tin–Oxide Electrode in HfO2-Based Resistive Random Access Memory PH Chen, KC Chang, TC Chang, TM Tsai, CH Pan, CY Lin, FY Jin, ... IEEE Electron Device Letters 37 (5), 584-587, 2016 | 30 | 2016 |
| A novel heat dissipation structure for inhibiting hydrogen diffusion in top-gate a-InGaZnO TFTs HC Chen, GF Chen, PH Chen, SP Huang, JJ Chen, KJ Zhou, CW Kuo, ... IEEE Electron Device Letters 40 (9), 1447-1450, 2019 | 24 | 2019 |
| Solving the Scaling Issue of Increasing Forming Voltage in Resistive Random Access Memory Using High‐k Spacer Structure YT Tseng, PH Chen, TC Chang, KC Chang, TM Tsai, CC Shih, HC Huang, ... Advanced Electronic Materials 3 (9), 1700171, 2017 | 24 | 2017 |
| Engineering interface-type resistance switching based on forming current compliance in ITO/Ga2O3: ITO/TiN resistance random access memory: Conduction mechanisms, temperature … CH Pan, TC Chang, TM Tsai, KC Chang, PH Chen, SW Chang-Chien, ... Applied Physics Letters 109 (18), 2016 | 24 | 2016 |
| Low temperature defect passivation technology for semiconductor electronic devices—Supercritical fluids treatment process TC Chang, PH Chen, CY Lin, CC Shih Materials Today Physics 14, 100225, 2020 | 22 | 2020 |
| Effects of plasma treatment time on surface characteristics of indium-tin-oxide film for resistive switching storage applications PH Chen, TC Chang, KC Chang, TM Tsai, CH Pan, CC Shih, CH Wu, ... Applied Surface Science 414, 224-229, 2017 | 22 | 2017 |
| Analysis and comparison of operational characteristics of electric vehicle traction units combining two different types of motors TA Huynh, PH Chen, MF Hsieh IEEE Transactions on Vehicular Technology 71 (6), 5727-5742, 2022 | 21 | 2022 |
Chih-Cheng Shih國立中山大學材料與光電科學研究所 博士Bestätigte E-Mail-Adresse bei student.nsysu.edu.tw
