| Transport properties of polarization-induced 2D electron gases in epitaxial AlScN/GaN heterojunctions J Casamento, TS Nguyen, Y Cho, C Savant, T Vasen, S Afroz, D Hannan, ... Applied Physics Letters 121 (19), 192101, 2022 | 25 | 2022 |
| FerroHEMTs: High-Current and High-Speed All-Epitaxial AlScN/GaN Ferroelectric Transistors J Casamento, K Nomoto, TS Nguyen, H Lee, C Savant, L Li, A Hickman, ... 2022 International Electron Devices Meeting (IEDM), 11.1.1-11.1.4, 2022 | 16 | 2022 |
| Epitaxial lattice-matched AlScN/GaN distributed Bragg reflectors L van Deurzen, TS Nguyen, J Casamento, HG Xing, D Jena Applied Physics Letters 123 (24), 241104, 2023 | 11 | 2023 |
| AlScN High Electron Mobility Transistors: Integrating High Piezoelectric, High K Dielectric, and Ferroelectric Functionality J Casamento, K Nomoto, TS Nguyen, H Lee, C Savant, L Li, A Hickman, ... 2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and …, 2023 | 2 | 2023 |
| Lattice-matched multiple channel AlScN/GaN heterostructures TS Nguyen, N Pieczulewski, C Savant, JJP Cooper, J Casamento, ... APL Materials 12 (10), 2024 | 1 | 2024 |
| Ferroelectric AlBN films by molecular beam epitaxy C Savant, V Gund, K Nomoto, T Maeda, S Jadhav, J Lee, M Ramesh, ... Applied Physics Letters 125 (7), 2024 | 1 | 2024 |
| AlScN/GaN HEMTs with 4 A/mm on-current and maximum oscillation frequency> 130 GHz K Nomoto, JA Casamento, TS Nguyen, L Li, H Lee, CP Savant, ... Applied Physics Express, 2025 | | 2025 |
| Self-activated epitaxial growth of ScN films from molecular nitrogen at low temperatures CP Savant, A Verma, TS Nguyen, L van Deurzen, YH Chen, Z He, ... APL Materials 12 (11), 2024 | | 2024 |
| Epitaxial AlBN/β‐Nb2N Ferroelectric/Superconductor Heterostructures C Savant, TS Nguyen, S Vishwakarma, J Lee, A Ithepalli, YH Chen, ... physica status solidi (RRL)–Rapid Research Letters, 2400157, 2024 | | 2024 |
| Growth of wurtzite AlScN thin films on commercial Silicon and SOI (111) substrates using PAMBE R Singh, TS Nguyen, A Ithepalli, D Jena, HG Xing Bulletin of the American Physical Society, 2024 | | 2024 |
| Toward new ferroelectric nitride materials and devices: Aluminum boron nitride and aluminum scandium nitride ferroelectric high electron mobility transistors (FerroHEMTs) J Casamento, J Hayden, S Trolier-McKinstry, JP Maria, TS Nguyen, ... Semiconductors and Semimetals 114, 119-136, 2023 | | 2023 |
| Transport Properties of Polarization-Induced 2D Electron Gases in Epitaxial AlScN/GaN Heterojunctions TS Nguyen, J Casamento, C Savant, Y Cho, HG Xing, D Jena APS March Meeting Abstracts 2023, Y40. 007, 2023 | | 2023 |
| Transport properties of heavily Si doped high Al mole fraction AlxGa1-xN grown by MBE on single-crystal AlN substrates C Savant, R Page, TS Nguyen, K Lee, V Protasenko, HG Xing, D Jena APS March Meeting Abstracts 2023, G41. 010, 2023 | | 2023 |
| Ion beam channeling studies of scandium incorporation into ScAlN E Ozdemir, J Cooper, TS Nguyen, J Casamento, D Jena, HG Xing, ... APS March Meeting Abstracts 2023, G41. 009, 2023 | | 2023 |
| PLEASE CITE THIS ARTICLE AS DOI: 10.1063/5.0176707 L van Deurzen, TS Nguyen, J Casamento, HG Xing, D Jena | | |
| Momentum-space imaging and chemical gating of the novel polarization induced two-dimensional electron and hole gases on AlN single crystals E Della Valle, D Jena, G Khalsa, TS Nguyen, Z Zhang, V Strokov | | |
Debdeep JenaCornell UniversityBestätigte E-Mail-Adresse bei cornell.edu