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Sebastian Krause
Sebastian Krause
Research Associate GaN Technologies
Bestätigte E-Mail-Adresse bei iaf.fraunhofer.de - Startseite
Titel
Zitiert von
Zitiert von
Jahr
AlScN/GaN HEMTs grown by metal-organic chemical vapor deposition with 8.4 W/mm output power and 48% power-added efficiency at 30 GHz
S Krause, I Streicher, P Waltereit, L Kirste, P Brückner, S Leone
IEEE Electron Device Letters 44 (1), 17-20, 2022
472022
High‐power microwave GaN/AlGaN HEMTs and MMICs on SiC and silicon substrates for modern radio communication
R Quay, D Schwantuschke, E Ture, F van Raay, C Friesicke, S Krause, ...
physica status solidi (a) 215 (9), 1700655, 2018
292018
First demonstration of G-band broadband GaN power amplifier MMICs operating beyond 200 GHz
M Ćwikliński, P Brückner, S Leone, S Krause, C Friesicke, H Maßler, ...
2020 IEEE/MTT-S International Microwave Symposium (IMS), 1117-1120, 2020
202020
Investigations of active antenna Doherty power amplifier modules under beam-steering mismatch
B Gashi, S Krause, R Quay, C Fager, O Ambacher
IEEE Microwave and Wireless Components Letters 28 (10), 930-932, 2018
182018
QFN-packaged highly-linear cascode GaN LNA MMIC from 0.5 to 3 GHz
S Maroldt, B Aja, F van Raay, S Krause, P Brueckner, R Quay
2013 European Microwave Conference, 1399-1402, 2013
172013
High-power-density AlGaN/GaN technology for 100-V operation at L-band frequencies
S Krause, P Brueckner, M Dammann, R Quay
2019 IEEE International Electron Devices Meeting (IEDM), 17.4. 1-17.4. 4, 2019
132019
Advances in GaN Devices and Circuits at Higher mm-Wave Frequencies
P Neininger, M Mikulla, P Döring, M Dammann, F Thome, S Krause, ...
e-Prime-Advances in Electrical Engineering, Electronics and Energy 4, 100177, 2023
122023
A sequential power amplifier at 3.5 GHz for 5G applications
P Neininger, C Friesicke, S Krause, D Meder, R Lozar, T Merkle, R Quay, ...
2017 47th European microwave conference (EuMC), 284-287, 2017
102017
Voltage-margin limiting mechanisms of AlScN-based HEMTs
P Döring, S Krause, P Waltereit, P Brückner, S Leone, I Streicher, ...
Applied Physics Letters 123 (3), 2023
92023
Deep Submicron III-N HEMTs–Technological Development and Reliability
R Quay, M Dammann, T Kemmer, P Brueckner, M Cwiklinski, ...
2019 IEEE International Electron Devices Meeting (IEDM), 17.1. 1-17.1. 4, 2019
82019
Efficiency and Linearity of Digital" Class-C Like" Transmitters
DPN Mul, RJ Bootsman, Q Bruinsma, Y Shen, S Krause, R Quay, MJ Pelk, ...
2020 50th European Microwave Conference (EuMC), 1-4, 2021
62021
Theoretical limits of the matching bandwidth and output power of AlScN-based hemts
P Döring, S Krause, C Friesicke, R Quay
IEEE Transactions on Electron Devices, 2023
52023
A 2.5W/mm High-Power Density V-Band Power Amplifier Using 150 nm GaN Technology Beyond fT
B Cimbili, C Friesicke, S Krause, F Van Raay, R Quay
2023 18th European Microwave Integrated Circuits Conference (EuMIC), 161-164, 2023
42023
Reliability and Failure Analysis of 100 nm AlGaN/GaN HEMTs under DC and RF Stress
M Dammann, M Baeumler, T Kemmer, H Konstanzer, P Brückner, ...
2021 IEEE International Reliability Physics Symposium (IRPS), 1-7, 2021
42021
100-V GaN HEMT Technology with record-high efficiency at C-Band frequencies
S Krause, P Brückner, R Quay
32022
Dynamic load modulated low-voltage GaN PA using novel low-loss GaN varactors
R Amirpour, S Krause, R Quay, O Ambacher
2018 48th European Microwave Conference (EuMC), 5-8, 2018
32018
Broadband Low-Noise Ka-Band Front-End MMIC in a 0.15-µm GaN-on-SiC HEMT Technology
F Thome, P Neininger, S Krause, P Brückner, R Quay
2024 IEEE/MTT-S International Microwave Symposium-IMS 2024, 243-246, 2024
22024
Targeting the C-band with ultra-high-voltage HEMTs
S Krause
22022
Design and evaluation of realizable and compact low-impedance transmission lines for two top-metal-layer semiconductor processes
P Pahl, S Diebold, S Krause, H Gulan, M Pauli, H Massler, A Leuther, ...
2014 Asia-Pacific Microwave Conference, 52-54, 2014
22014
V-band GaN power amplifier MMICs with high power-bandwidth and low gain compression for RF inter-satellite links
C Friesicke, F Van Raay, S Krause, B Cimbili, P Bruckner, R Quay, ...
2024 IEEE/MTT-S International Microwave Symposium-IMS 2024, 854-857, 2024
12024
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