| Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO2 RRAM via TiN bottom electrode and interface engineering Z Yong, KM Persson, MS Ram, G D'Acunto, Y Liu, S Benter, J Pan, Z Li, ... Applied Surface Science 551, 149386, 2021 | 89 | 2021 |
| Dopingless PNPN tunnel FET with improved performance: design and analysis MS Ram, DB Abdi Superlattices and Microstructures 82, 430-437, 2015 | 62 | 2015 |
| High-density logic-in-memory devices using vertical indium arsenide nanowires on silicon MS Ram, KM Persson, A Irish, A Jönsson, R Timm, LE Wernersson Nature Electronics 4 (12), 914-920, 2021 | 40 | 2021 |
| Cross‐Point Arrays with Low‐Power ITO‐HfO2 Resistive Memory Cells Integrated on Vertical III‐V Nanowires KM Persson, MS Ram, OP Kilpi, M Borg, LE Wernersson Advanced Electronic Materials 6 (6), 2000154, 2020 | 28 | 2020 |
| Submicrometer top-gate self-aligned a-IGZO TFTs by substrate conformal imprint lithography MS Ram, L De Kort, J De Riet, R Verbeek, T Bel, G Gelinck, ... IEEE Transactions on Electron Devices 66 (4), 1778-1782, 2019 | 25 | 2019 |
| Single grain boundary tunnel field effect transistors on recrystallized polycrystalline silicon: Proposal and investigation MS Ram, DB Abdi IEEE Electron Device Letters 35 (10), 989-991, 2014 | 24 | 2014 |
| Low-power resistive memory integrated on III–V vertical nanowire MOSFETs on silicon MS Ram, KM Persson, M Borg, LE Wernersson IEEE Electron Device Letters 41 (9), 1432-1435, 2020 | 23 | 2020 |
| Single grain boundary dopingless PNPN tunnel FET on recrystallized polysilicon: Proposal and theoretical analysis MS Ram, DB Abdi IEEE Journal of the Electron Devices Society 3 (3), 291-296, 2015 | 19 | 2015 |
| Ultra-Scaled AlOx Diffusion Barriers for Multibit HfOx RRAM Operation KM Persson, MS Ram, LE Wernersson IEEE Journal of the Electron Devices Society 9, 564-569, 2021 | 18 | 2021 |
| Increased breakdown voltage in vertical heterostructure III-V nanowire MOSFETs with a field plate OP Kilpi, S Andrić, J Svensson, MS Ram, E Lind, LE Wernersson IEEE Electron Device Letters 42 (11), 1596-1598, 2021 | 12 | 2021 |
| Low-frequency noise in vertical InAs/InGaAs gate-all-around MOSFETs at 15 K for cryogenic applications MS Ram, J Svensson, S Skog, S Johannesson, LE Wernersson IEEE Electron Device Letters 43 (12), 2033-2036, 2022 | 11 | 2022 |
| Dopingless tunnel FET with a hetero-material gate: Design and analysis MS Ram, DB Abdi 2014 IEEE 2nd International Conference on Emerging Electronics (ICEE), 1-4, 2014 | 9 | 2014 |
| Performance investigation of single grain boundary junctionless field effect transistor MS Ram, DB Abdi IEEE Journal of the Electron Devices Society 4 (6), 480-484, 2016 | 7 | 2016 |
| Effects of Interface Oxidation on Noise Properties and Performance in III–V Vertical Nanowire Memristors M Saketh Ram, J Svensson, LE Wernersson ACS Applied Materials & Interfaces 15 (15), 19085-19091, 2023 | 5 | 2023 |
| A 4F2 Vertical Gate-all-around Nanowire Compute-in-memory Device Integrated in (1T1R) Cross-Point Arrays on Silicon MS Ram, KM Persson, LE Wernersson 2022 IEEE Silicon Nanoelectronics Workshop (SNW), 1-2, 2022 | 4 | 2022 |
| Self-Heating in Gate-All-Around Vertical III-V InAs/InGaAs MOSFETs G Rangasamy, MS Ram, LO Fhager, LE Wernersson IEEE Electron Device Letters 44 (7), 1212-1215, 2023 | 3 | 2023 |
| Investigation of reverse filament formation in ITO/HfO2-based RRAM KM Persson, MS Ram, M Borg, LE Wernersson 2019 Device Research Conference (DRC), 91-92, 2019 | 3 | 2019 |
| Performance, analysis, and modeling of III-V vertical nanowire MOSFETs on Si at higher voltages S Andrić, OP Kilpi, MS Ram, J Svensson, E Lind, LE Wernersson IEEE Transactions on Electron Devices 69 (6), 3055-3060, 2022 | 2 | 2022 |
| Optimization of Platinum dioxide properties by plasma oxidation of sputtered PtOx N Basu, NS Sterin, SR Mamidala, A Shenoy, N Bhat Materialia 8, 100477, 2019 | 2 | 2019 |
| Read Noise Analysis in Analog Conductive-Metal-Oxide/HfOx ReRAM Devices DGF Lombardo, MS Ram, T Stecconi, W Choi, A La Porta, DF Falcone, ... 2024 Device Research Conference (DRC), 1-2, 2024 | 1 | 2024 |
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