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Aaryan Oberoi
Aaryan Oberoi
Advanced Device Development Engineer, Intel
Bestätigte E-Mail-Adresse bei intel.com
Titel
Zitiert von
Zitiert von
Jahr
A low-power biomimetic collision detector based on an in-memory molybdenum disulfide photodetector
D Jayachandran, A Oberoi, A Sebastian, TH Choudhury, B Shankar, ...
Nature Electronics 3 (10), 646-655, 2020
1952020
Graphene memristive synapses for high precision neuromorphic computing
TF Schranghamer, A Oberoi, S Das
Nature communications 11 (1), 5474, 2020
1512020
A biomimetic neural encoder for spiking neural network
S Subbulakshmi Radhakrishnan, A Sebastian, A Oberoi, S Das, S Das
Nature communications 12 (1), 2143, 2021
1422021
Stochastic resonance in MoS2 photodetector
A Dodda, A Oberoi, A Sebastian, TH Choudhury, JM Redwing, S Das
Nature communications 11 (1), 4406, 2020
1242020
Low-Power and Ultra-Thin MoS2 Photodetectors on Glass
JR Nasr, N Simonson, A Oberoi, MW Horn, JA Robinson, S Das
ACS nano 14 (11), 15440-15449, 2020
792020
Secure electronics enabled by atomically thin and photosensitive two-dimensional memtransistors
A Oberoi, A Dodda, H Liu, M Terrones, S Das
ACS nano 15 (12), 19815-19827, 2021
662021
Step engineering for nucleation and domain orientation control in WSe2 epitaxy on c-plane sapphire
H Zhu, N Nayir, TH Choudhury, A Bansal, B Huet, K Zhang, AA Puretzky, ...
Nature nanotechnology 18 (11), 1295-1302, 2023
502023
Toward High-Performance p-Type Two-Dimensional Field Effect Transistors: Contact Engineering, Scaling, and Doping
A Oberoi, Y Han, SP Stepanoff, A Pannone, YC Sun, Yongwen, Lin, ...
ACS Nano 17 (20), 19709–19723, 2023
292023
Effective implementation of automated fertilization unit using analog pH sensor and Arduino
A Oberoi, S Basavaraju, S Lekshmi
2017 IEEE International Conference on Computational Intelligence and …, 2017
252017
Monolithic three-dimensional integration of complementary two-dimensional field-effect transistors
R Pendurthi, NU Sakib, MUK Sadaf, Z Zhang, Y Sun, C Chen, ...
Nature nanotechnology 19 (7), 970-977, 2024
162024
High-performance and low parasitic capacitance CNT MOSFET: 1.2 mA/μm at VDS of 0.75 V by self-aligned doping in sub-20 nm spacer
S Li, TA Chao, C Gilardi, N Safron, SK Su, G Zeevi, AD Bechdolt, ...
2023 International Electron Devices Meeting (IEDM), 1-4, 2023
72023
Study of an activity tracking device for rural workers through collaborative design
A Oberoi, H Mohan, S Basavaraju, S Raparthi, S Bhattacharjee, S Cornet
2021 IEEE 9th Region 10 Humanitarian Technology Conference (R10-HTC), 1-6, 2021
42021
Monolithic and heterogeneous three-dimensional integration of two-dimensional materials with high-density vias
S Ghosh, Y Zheng, Z Zhang, Y Sun, TF Schranghamer, NU Sakib, ...
Nature Electronics, 1-12, 2024
22024
ICT-based enhancement of employment schemes: a case study in rural Uttarakhand, India
A Oberoi, S Bandla, H Mohan, S Basavaraju, S Bhattacharjee, S Raparthi, ...
ICT with Intelligent Applications: Proceedings of ICTIS 2021, Volume 1, 643-651, 2022
22022
Vanadium-Doped Molybdenum Disulfide Monolayers with Tunable Electronic and Magnetic Properties: Do Vanadium-Vacancy Pairs Matter?
D Zhou, YTH Pham, DTX Dang, D Sanchez, A Oberoi, K Wang, A Fest, ...
arXiv preprint arXiv:2401.16806, 2024
12024
A stochastic encoder using point defects in two-dimensional materials
H Ravichandran, T Knobloch, S Subbulakshmi Radhakrishnan, ...
Nature communications 15 (1), 1-11, 2024
2024
Engineering Hole Injection and Transport in low-Dimensional Material Transistors
A Oberoi
The Pennsylvania State University, 2024
2024
A stochastic encoder using point defect in two-dimensional materials
S Das, H Ravichandran, T Knobloch, SS Radhakrishnan, S Stepanoff, ...
2023
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