Nitin Prasad

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Leonard F. RegisterProfessor of Electrical and Computer EngineeringBestätigte E-Mail-Adresse bei austin.utexas.edu
Emanuel TutucProfessor, The University of Texas at AustinBestätigte E-Mail-Adresse bei mer.utexas.edu
Kyounghwan KimAppleBestätigte E-Mail-Adresse bei utexas.edu
Mark StilesFellow, National Institute of Standards and TechnologyBestätigte E-Mail-Adresse bei nist.gov
Advait MadhavanAssistant Research Scientist, University of Maryland, National Institute of Standards and TechnologyBestätigte E-Mail-Adresse bei nist.gov
Sangwoo KangIntel CorporationBestätigte E-Mail-Adresse bei intel.com
Allan H. MacDonaldUniversity of Texas Austin, Indiana University, NRC Canada, U of TorontoBestätigte E-Mail-Adresse bei physics.utexas.edu
Jabez McclellandNISTBestätigte E-Mail-Adresse bei nist.gov
Matthew W. DanielsAlternative Computing Group, National Institute of Standards and TechnologyBestätigte E-Mail-Adresse bei nist.gov
Brian D. HoskinsPhysicist | National Institute of Standards and TechnologyBestätigte E-Mail-Adresse bei nist.gov
Prashansa MukimStaff Engineer, Brookhaven National LaboratoryBestätigte E-Mail-Adresse bei bnl.gov
Anjan ChakravortyAssociate Professor of Electrical Engineering, IIT MadrasBestätigte E-Mail-Adresse bei ee.iitm.ac.in
Jens SaakSenior Scientist, Max Planck Institute for Dynamics of Complex Technical SystemsBestätigte E-Mail-Adresse bei mpi-magdeburg.mpg.de
Dr. Martin KöhlerTechnical associate, Max Planck Institute for Dynamics of Complex Technical SystemsBestätigte E-Mail-Adresse bei mpi-magdeburg.mpg.de

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Nitin Prasad

IBM Research

Bestätigte E-Mail-Adresse bei ibm.com

MRAM Beyond-CMOS technology


Titel Nach Zitationen sortieren Nach Jahr sortieren Nach Titel sortieren	Zitiert von Zitiert von	Jahr
Strongly Enhanced Tunneling at Total Charge Neutrality in Double-Bilayer Graphene- Heterostructures GW Burg, N Prasad, K Kim, T Taniguchi, K Watanabe, AH MacDonald, ... Physical review letters 120 (17), 177702, 2018	145	2018
Coherent Interlayer Tunneling and Negative Differential Resistance with High Current Density in Double Bilayer Graphene–WSe₂ Heterostructures GW Burg, N Prasad, B Fallahazad, A Valsaraj, K Kim, T Taniguchi, ... Nano letters 17 (6), 3919-3925, 2017	72	2017
Effects of electrode layer band structure on the performance of multilayer graphene–hBN–graphene interlayer tunnel field effect transistors S Kang, N Prasad, HCP Movva, A Rai, K Kim, X Mou, T Taniguchi, ... Nano letters 16 (8), 4975-4981, 2016	43	2016
Spin-Conserving Resonant Tunneling in Twist-Controlled WSe₂-hBN-WSe₂ Heterostructures K Kim, N Prasad, HCP Movva, GW Burg, Y Wang, S Larentis, T Taniguchi, ... Nano letters 18 (9), 5967-5973, 2018	39	2018
Conversion of spin current into charge current in a topological insulator: Role of the interface R Dey, N Prasad, LF Register, SK Banerjee Physical Review B 97 (17), 174406, 2018	33	2018
Implementation of a binary neural network on a passive array of magnetic tunnel junctions JM Goodwill, N Prasad, BD Hoskins, MW Daniels, A Madhavan, L Wan, ... Physical Review Applied 18 (1), 014039, 2022	15	2022
ReS2-based interlayer tunnel field effect transistor OB Mohammed, HCP Movva, N Prasad, A Valsaraj, S Kang, CM Corbet, ... Journal of Applied Physics 122 (24), 2017	13	2017
Interlayer tunnel field-effect transistor (ITFET): physics, fabrication and applications S Kang, X Mou, B Fallahazad, N Prasad, X Wu, A Valsaraj, HCP Movva, ... Journal of Physics D: Applied Physics 50 (38), 383002, 2017	11	2017
Unbiased random bitstream generation using injection-locked spin-torque nano-oscillators NT Phan, N Prasad, A Hakam, ASE Valli, L Anghel, L Benetti, ... Physical Review Applied 21 (3), 034063, 2024	10	2024
Quantum lifetime spectroscopy and magnetotunneling in double bilayer graphene heterostructures N Prasad, GW Burg, K Watanabe, T Taniguchi, LF Register, E Tutuc Physical Review Letters 127 (11), 117701, 2021	9	2021
An improved quasi-saturation and charge model for SOI-LDMOS transistors N Prasad, P Sarangapani, KNS Nikhil, N DasGupta, A DasGupta, ... IEEE Transactions on Electron Devices 62 (3), 919-926, 2015	9	2015
Emergence of interlayer coherence in twist-controlled graphene double layers KA Lin, N Prasad, GW Burg, B Zou, K Ueno, K Watanabe, T Taniguchi, ... Physical Review Letters 129 (18), 187701, 2022	8	2022
Associative memories using complex-valued Hopfield networks based on spin-torque oscillator arrays N Prasad, P Mukim, A Madhavan, MD Stiles Neuromorphic Computing and Engineering 2 (3), 034003, 2022	8	2022
A nano-satellite mission to study charged particle precipitation from the Van Allen radiation belts caused due to Seismo-electromagnetic emissions N Sivadas, A Gulati, D Kannapan, AS Yalamarthy, A Dhiman, A Bhagoji, ... arXiv preprint arXiv:1411.6034, 2014	8	2014
Realizing both short-and long-term memory within a single magnetic tunnel junction based synapse N Prasad, T Pramanik, SK Banerjee, LF Register Journal of Applied Physics 127 (9), 2020	5	2020
Characterization of noise in cmos ring oscillators at cryogenic temperatures P Mukim, PR Shrestha, A Madhavan, N Prasad, J Campbell, FD Brewer, ... IEEE Electron Device Letters, 2023	4	2023
Multi-barrier inter-layer tunnel field-effect transistor N Prasad, X Mou, LF Register, SK Banerjee 2016 IEEE International Electron Devices Meeting (IEDM), 30.4. 1-30.4. 4, 2016	4	2016
Neural networks three ways: unlocking novel computing schemes using magnetic tunnel junction stochasticity MW Daniels, WA Borders, N Prasad, A Madhavan, S Gibeault, T Adeyeye, ... Spintronics XVI 12656, 84-94, 2023	3	2023
Numerical solution of large scale sparse matrix equations in python B Baran, M Köhler, N Prasad, J Saak PAMM 14 (1), 959-960, 2014	2	2014
Interfacing CM. ESS with Python B Baran, M Köhler, N Prasad, J Saak Max Planck Institute Magdeburg, 2013	2	2013

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