Cryptocurrencies and stock market indices. Are they related? LA Gil-Alana, EJA Abakah, MFR Rojo
Research in International Business and Finance 51, 101063, 2020
346 2020 Anisotropic absorption and emission of bulk M Feneberg, MF Romero, M Röppischer, C Cobet, N Esser, B Neuschl, ...
Physical Review B 87 (23), 235209, 2013
82 2013 Simple and accurate method to estimate channel temperature and thermal resistance in AlGaN/GaN HEMTs S Martin-Horcajo, A Wang, MF Romero, MJ Tadjer, F Calle
IEEE Transactions on Electron Devices 60 (12), 4105-4111, 2013
79 2013 Volatility persistence in cryptocurrency markets under structural breaks EJA Abakah, LA Gil-Alana, G Madigu, F Romero-Rojo
International Review of Economics & Finance 69, 680-691, 2020
71 2020 Direct comparison of traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors using constant drain current deep level transient spectroscopy A Sasikumar, AR Arehart, S Martin-Horcajo, MF Romero, Y Pei, D Brown, ...
Applied Physics Letters 103 (3), 033509, 2013
70 2013 Effects of MF Romero, A JimÉnezJimenez, J Miguel-SÁnchezMiguel-Sanchez, ...
IEEE Electron Device Letters 29 (3), 209-211, 2008
57 2008 The impact of geopolitical risk on the behavior of oil prices and freight rates M Monge, MFR Rojo, LA Gil-Alana
Energy 269, 126779, 2023
54 2023 Physics-based analytical model for input, output, and reverse capacitance of a GaN HEMT with the field-plate structure D Čučak, M Vasić, O García, JA Oliver, P Alou, JA Cobos, A Wang, ...
IEEE Transactions on Power Electronics 32 (3), 2189-2202, 2017
40 2017 Compound Semiconductor Devices-Impact of N2 Plasma Power Discharge on AlGaN/GaN HEMT Performance MF Romero, A Jímenez, F González-Posada Flores, S Martin-Horcajo, ...
IEEE Transactions on Electron Devices 59 (2), 374, 2012
38 * 2012 High-temperature microwave performance of submicron AlGaN/GaN HEMTs on SiC R Cuerdo, E Sillero, MF Romero, MJ Uren, MA di Forte Poisson, E Muñoz, ...
IEEE Electron Device Letters 30 (8), 808-810, 2009
33 2009 Negative spin-exchange splitting in the exciton fine structure of AlN M Feneberg, M Fátima Romero, B Neuschl, K Thonke, M Röppischer, ...
Applied Physics Letters 102 (5), 052112, 2013
25 2013 Impact of device geometry at different ambient temperatures on the self-heating of GaN-based HEMTs S Martin-Horcajo, A Wang, MF Romero, MJ Tadjer, AD Koehler, ...
Semiconductor Science and Technology 29 (11), 115013, 2014
23 2014 Effects of Gd2 O3 Gate Dielectric on Proton-Irradiated AlGaN/GaN HEMTs Z Gao, MF Romero, A Redondo-Cubero, MA Pampillón, E San Andrés, ...
IEEE Electron Device Letters 38 (5), 611-614, 2017
22 2017 Thermal and Electrical Stability Assessment of AlGaN/GaN Metal–Oxide–Semiconductor High-Electron Mobility Transistors (MOS-HEMTs) With HfO2 Gate Dielectric Z Gao, MF Romero, F Calle
IEEE Transactions on Electron Devices 65 (8), 3142-3148, 2018
21 2018 Trapping phenomena in AlGaN and InAlN barrier HEMTs with different geometries S Martin-Horcajo, A Wang, A Bosca, MF Romero, MJ Tadjer, AD Koehler, ...
Semiconductor Science and Technology 30 (3), 035015, 2015
21 2015 Thermal Assessment of AlGaN/GaN MOS-HEMTs on Si Substrate Using Gd2 O3 as Gate Dielectric Z Gao, MF Romero, MÁ Pampillón, E San Andrés, F Calle
IEEE Transactions on Electron Devices 63 (7), 2729-2734, 2016
18 2016 Luminescence from two-dimensional electron gases in InAlN/GaN heterostructures with different In content MF Romero, M Feneberg, P Moser, C Berger, J Bläsing, A Dadgar, ...
Applied Physics Letters 100 (21), 212101, 2012
16 2012 Etching of AIGaN/GaN HEMT structures by Cl2 -based ICP Z Gao, MF Romero, F Calle
Electron Devices (CDE), 2013 Spanish Conference on, 29-32, 2013
9 2013 Temperature dependent dielectric function and reflectivity spectra of nonpolar wurtzite AlN M Feneberg, MF Romero, B Neuschl, K Thonke, M Röppischer, C Cobet, ...
Thin Solid Films 571, 502-505, 2014
8 2014 Optical properties of magnesium doped Alx 1− x x ≤ 0.73) M Feneberg, S Osterburg, MF Romero, B Garke, R Goldhahn, ...
Journal of applied physics 116 (14), 143103, 2014
8 2014 