| Deep-level traps in AlGaN/GaN-and AlInN/GaN-based HEMTs with different buffer doping technologies PV Raja, M Bouslama, S Sarkar, KR Pandurang, JC Nallatamby, ... IEEE Transactions on Electron Devices 67 (6), 2304-2310, 2020 | 63 | 2020 |
| Trapping effects on AlGaN/GaN HEMT characteristics PV Raja, JC Nallatamby, N DasGupta, A DasGupta Solid-State Electronics 176, 107929, 2021 | 47 | 2021 |
| Spectroscopic performance studies of 4H-SiC detectors for fusion alpha-particle diagnostics PV Raja, J Akhtar, CVS Rao, S Vala, M Abhangi, NVLN Murty Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2017 | 29 | 2017 |
| Identification of Buffer and Surface Traps in Fe-Doped AlGaN/GaN HEMTs Using Y21 Frequency Dispersion Properties PV Raja, NK Subramani, F Gaillard, M Bouslama, R Sommet, ... Electronics 10 (24), 3096, 2021 | 24 | 2021 |
| Effects of oxygen plasma treatment on Cd1− xZnxTe material and devices A Brovko, O Amzallag, A Adelberg, L Chernyak, PV Raja, A Ruzin Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2021 | 19 | 2021 |
| Thermally stimulated capacitance in gamma irradiated epitaxial 4H-SiC Schottky barrier diodes P Vigneshwara Raja, NVL Narasimha Murty Journal of Applied Physics 123 (16), 2018 | 15 | 2018 |
| Thermal annealing studies in epitaxial 4H-SiC Schottky barrier diodes over wide temperature range PV Raja, NVLN Murty Microelectronics Reliability 87, 213-221, 2018 | 12 | 2018 |
| Estimation of trapping induced dynamic reduction in 2DEG density of GaN-based HEMTs by gate-lag DCT technique PV Raja, E Dupouy, M Bouslama, R Sommet, JC Nallatamby IEEE Transactions on Electron Devices 69 (9), 4864-4869, 2022 | 11 | 2022 |
| Investigation of electron trapping in AlGaN/GaN HEMT with Fe-doped buffer through DCT characterization and TCAD device simulations M Bouslama, PV Raja, F Gaillard, R Sommet, JC Nallatamby AIP Advances 11 (12), 2021 | 10 | 2021 |
| Comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes PV Raja, C Raynaud, C Sonneville, AJE N'Dohi, H Morel, LV Phung, ... Microelectronics Journal 128, 105575, 2022 | 8 | 2022 |
| Electrically active defects in neutron-irradiated HPSI 4H-SiC X-ray detectors investigated by ZB-TSC technique PV Raja, NVLN Murty IEEE Transactions on Nuclear Science 64 (8), 2377-2385, 2017 | 8 | 2017 |
| D–T Neutron and60Co-Gamma Irradiation Effects on HPSI 4H-SiC Photoconductors PV Raja, NVLN Murty IEEE Transactions on Nuclear Science 65 (1), 558-565, 2017 | 7 | 2017 |
| Thermally annealed gamma irradiated Ni/4H-SiC Schottky barrier diode characteristics PV Raja, NVLN Murty Journal of Semiconductors 40 (2), 022804, 2019 | 5 | 2019 |
| Simulation of self-heating and bulk trapping effects on drain current static and transient characteristics of AlGaN/GaN HEMTs PV Raja, N DasGupta, A DasGupta 2018 4th IEEE International Conference on Emerging Electronics (ICEE), 1-6, 2018 | 5 | 2018 |
| Numerical simulation of 60Co-gamma irradiation effects on electrical characteristics of n-type FZ silicon X-ray detectors PV Raja, CVS Rao, NVLN Murty Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2016 | 5 | 2016 |
| Numerical simulation of 14.1 MeV neutron irradiation effects on electrical characteristics of PIPS detector for plasma X-ray tomography PV Raja, NVLN Murty, CVS Rao, M Abhangi IEEE Transactions on Nuclear Science 62 (4), 1634-1641, 2015 | 5 | 2015 |
| Performance of epitaxial and HPSI 4H-SiC detectors for plasma X-ray imaging systems PV Raja, J Akhtar, S Vala, M Abhangic, N Murtya Journal of Instrumentation 12, P08006, 2017 | 4 | 2017 |
| Investigation of X-ray spectral response of DT fusion produced neutron irradiated PIPS detectors for plasma X-ray diagnostics PV Raja, NVLN Murty, CVS Rao, M Abhangi Journal of Instrumentation 10 (10), P10018, 2015 | 4 | 2015 |
| HTRB Stress Effects on 0.15 µm AlGaN/GaN HEMT Performance PV Raja, JC Nallatamby, M Bouslama, JC Jacquet, R Sommet, C Chang, ... 2022 IEEE MTT-S International Conference on Numerical Electromagnetic and …, 2022 | 3 | 2022 |
| Trap characterization in InAlN/GaN and AlN/GaN based HEMTs with Fe-and C-doped buffers E Dupouy, PV Raja, F Gaillard, R Sommet, JC Nallatamby 2021 16th European Microwave Integrated Circuits Conference (EuMIC), 197-200, 2022 | 3 | 2022 |
