| Low-Temperature Ohmic Contact to Monolayer MoS2 by van der Waals Bonded Co/h-BN Electrodes X Cui, EM Shih, LA Jauregui, SH Chae, YD Kim, B Li, D Seo, K Pistunova, ... Nano letters 17 (8), 4781-4786, 2017 | 320 | 2017 |
| Ultrafast graphene light emitters YD Kim, Y Gao, RJ Shiue, L Wang, B Aslan, MH Bae, H Kim, D Seo, ... Nano letters 18 (2), 934-940, 2018 | 144 | 2018 |
| Thermal conductivity of VLS-grown rough Si nanowires with various surface roughnesses and diameters YH Park, J Kim, H Kim, I Kim, KY Lee, D Seo, HJ Choi, W Kim Applied Physics A 104, 7-14, 2011 | 67 | 2011 |
| Two-dimensionally grown single-crystal silicon nanosheets with tunable visible-light emissions SW Kim, J Lee, JH Sung, D Seo, I Kim, MH Jo, BW Kwon, WK Choi, ... ACS nano 8 (7), 6556-6562, 2014 | 62 | 2014 |
| Electrostatic Screening of Charged Defects in Monolayer MoS2 TL Atallah, J Wang, M Bosch, D Seo, RA Burke, O Moneer, J Zhu, ... The journal of physical chemistry letters 8 (10), 2148-2152, 2017 | 56 | 2017 |
| High-performance monolayer MoS2 field-effect transistor with large-scale nitrogen-doped graphene electrodes for Ohmic contact D Seo, DY Lee, J Kwon, JJ Lee, T Taniguchi, K Watanabe, GH Lee, ... Applied Physics Letters 115 (1), 2019 | 47 | 2019 |
| Hopping conduction in p-type MoS2 near the critical regime of the metal-insulator transition TE Park, J Suh, D Seo, J Park, DY Lin, YS Huang, HJ Choi, J Wu, C Jang, ... Applied Physics Letters 107 (22), 2015 | 30 | 2015 |
| Growth of silicon nanosheets under diffusion-limited aggregation environments J Lee, SW Kim, I Kim, D Seo, HJ Choi Nanoscale research letters 10, 1-6, 2015 | 23 | 2015 |
| Graphene-based plasmonic waveguide devices for electronic-photonic integrated circuit JT Kim, JH Choe, JS Kim, D Seo, YD Kim, KH Chung Optics & Laser Technology 106, 76-86, 2018 | 22 | 2018 |
| Multioperation‐mode light‐emitting field‐effect transistors based on van der Waals heterostructure J Kwon, JC Shin, H Ryu, JY Lee, D Seo, K Watanabe, T Taniguchi, ... Advanced Materials 32 (43), 2003567, 2020 | 17 | 2020 |
| Achieving near-perfect light absorption in atomically thin transition metal dichalcogenides through band nesting S Lee, D Seo, SH Park, N Izquierdo, EH Lee, R Younas, G Zhou, M Palei, ... Nature communications 14 (1), 3889, 2023 | 16 | 2023 |
| Large-Scale Self-Limiting Synthesis of Monolayer MoS2 via Proximity Evaporation from Mo Films HJ Choi, YS Jung, SM Lee, S Kang, D Seo, H Kim, HJ Choi, GH Lee, ... Crystal Growth & Design 20 (4), 2698-2705, 2020 | 14 | 2020 |
| Structural modulation of silicon nanowires by combining a high gas flow rate with metal catalysts D Seo, J Lee, SW Kim, I Kim, J Na, MH Hong, HJ Choi Nanoscale Research Letters 10, 1-7, 2015 | 11 | 2015 |
| Extension of the T-bridge method for measuring the thermal conductivity of two-dimensional materials J Kim, DJ Seo, H Park, H Kim, HJ Choi, W Kim Review of Scientific Instruments 88 (5), 2017 | 10 | 2017 |
| Phosphorus doping of Si nanosheets by spin-on dopant proximity JM Yang, J Lee, TE Park, D Seo, JM Park, S Park, J Na, J Kwon, HJ Lee, ... Electronic Materials Letters 15, 208-215, 2019 | 7 | 2019 |
| Stabilization of Chemical-Vapor-Deposition-Grown WS2 Monolayers at Elevated Temperature with Hexagonal Boron Nitride Encapsulation X Hua, D Zhang, B Kim, D Seo, K Kang, EH Yang, J Hu, X Chen, H Liang, ... ACS applied materials & interfaces 13 (26), 31271-31278, 2021 | 5 | 2021 |
| Magnetic In x Ga1 - xN nanowires at room temperature using Cu dopant and annealing YH Park, R Ha, TE Park, SW Kim, D Seo, HJ Choi Nanoscale Research Letters 10, 1-5, 2015 | 5 | 2015 |
| Vertical Conductivity and Topography in Electrostrictive Germanium Sulfide Microribbon via Conductive Atomic Force Microscopy Z Chen, AT Hoang, W Hwang, D Seo, M Cho, YD Kim, L Yang, A Soon, ... Nano letters 22 (18), 7636-7643, 2022 | 4 | 2022 |
| Topography dependence of conductivity in electrostrictive germanium sulfide nanoribbons Z Chen, AT Hoang, D Seo, M Cho, YD Kim, L Yang, JH Ahn, HJ Choi 2D Materials 9 (4), 045008, 2022 | 4 | 2022 |
| Plasma-Doped Si Nanosheets for Transistor and p–n Junction Application J Lee, J Kwon, D Seo, J Na, S Park, HJ Lee, SW Lee, KY Lee, TE Park, ... ACS applied materials & interfaces 11 (45), 42512-42519, 2019 | 2 | 2019 |
Heon-Jin ChoiDepartment of Materials Science and Engineering, Yonsei UniversityBestätigte E-Mail-Adresse bei yonsei.ac.kr