Analysis of negative bias temperature instability degradation in p-type low-temperature polycrystalline silicon thin-film transistors of different grain sizes HY Tu, YC Tsao, MC Tai, TC Chang, YL Tsai, SP Huang, YZ Zheng, ...
IEEE Electron Device Letters 40 (11), 1768-1771, 2019
29 2019 Inhibiting the kink effect and hot-carrier stress degradation using dual-gate low-temperature poly-Si TFTs HC Chen, SP Huang, YF Tu, CW Kuo, KJ Zhou, JJ Chen, YS Shih, ...
IEEE Electron Device Letters 41 (1), 54-57, 2019
13 2019 A novel structure to reduce degradation under mechanical bending in foldable low temperature polysilicon TFTs fabricated on polyimide YX Wang, TC Chang, SP Huang, MC Tai, YZ Zheng, CC Wu, YS Shih, ...
IEEE Electron Device Letters 41 (5), 725-728, 2020
10 2020 Improving reliability of high-performance ultraviolet sensor in a-InGaZnO thin-film transistors YL Tsai, YC Chien, TC Chang, YC Tsao, MC Tai, HY Tu, JJ Chen, ...
IEEE Electron Device Letters 40 (9), 1455-1458, 2019
10 2019 Performance enhancement of InGaZnO top-gate thin film transistor with low-temperature high-pressure fluorine treatment YT Chien, YL Tsai, KJ Zhou, YZ Zheng, MC Tai, HY Tu, CW Kuo, ...
IEEE Electron Device Letters 42 (11), 1611-1614, 2021
8 2021 Reliability test integrating electrical and mechanical stress at high temperature for a-InGaZnO thin film transistors YC Tsao, TC Chang, SP Huang, YL Tsai, YC Chien, MC Tai, HY Tu, ...
IEEE Transactions on Device and Materials Reliability 19 (2), 433-436, 2019
7 2019 Improving breakdown voltage in AlGaN/GaN metal-insulator-semiconductor HEMTs through electric-field dispersion layer material selection YL Tsai, TC Chang, YC Tsao, MC Tai, HY Tu, YT Chien, FY Jin, HX Zheng, ...
IEEE Transactions on Device and Materials Reliability 21 (3), 320-323, 2021
6 2021 Effects of Ultraviolet Light on the Dual-Sweep 4 Thin-Film Transistor YC Tsao, TC Chang, SP Huang, YL Tsai, MC Tai, HY Tu, HC Chen, ...
IEEE Transactions on Electron Devices 66 (4), 1772-1777, 2019
6 2019 Improving Reliability of a-InGaZnO TFTs With Optimal Location of Al2 O3 Passivation in Moist Environment YF Tu, CL Chiang, TC Chang, YH Hung, LC Sun, CW Kuo, HY Tu, ...
IEEE Transactions on Electron Devices 69 (6), 3181-3185, 2022
5 2022 Abnormal on-current degradation under non-conductive stress in contact field plate lateral double-diffused metal-oxide-semiconductor transistor with 0.13-μm bipolar-CMOS-DMOS … WC Hung, YF Tu, TC Chang, MC Tai, YF Tan, KH Chen, CH Yeh, HY Tu, ...
IEEE Electron Device Letters 43 (5), 769-772, 2022
5 2022 Abnormal two-stage degradation on P-type low-temperature polycrystalline-silicon thin-film transistor under hot carrier conditions HY Tu, TC Chang, YC Tsao, MC Tai, YZ Zheng, YF Tu, CW Kuo, CC Wu, ...
IEEE Electron Device Letters 43 (5), 721-724, 2022
5 2022 Impact of AC stress in low temperature polycrystalline silicon thin film transistors produced with different excimer laser annealing energies YZ Zheng, CC Wu, PH Chen, TC Chang, KJ Zhou, HY Tu, YF Tu, YA Chen, ...
IEEE Electron Device Letters 42 (6), 847-850, 2021
5 2021 Abnormal hysteresis formation in hump region after positive gate bias stress in low-temperature poly-silicon thin film transistors HY Tu, TC Chang, YC Tsao, MC Tai, YL Tsai, SP Huang, YZ Zheng, ...
Journal of Physics D: Applied Physics 53 (40), 405104, 2020
5 2020 Enhancing Reliability and 2 mm-Axial Mechanical Bending Endurance by Gate Insulator Improvements in Flexible Polycrystalline Silicon TFTs YZ Zheng, PH Chen, TC Chang, TM Tsai, KJ Zhou, YF Tu, YX Wang, ...
IEEE Transactions on Electron Devices 69 (5), 2423-2429, 2022
4 2022 On the optimization of performance and reliability in a-InGaZnO thin-film transistors by versatile light shielding design CW Kuo, TC Chang, YC Chien, YL Tsai, HY Tu, YC Tsao, YT Chien, ...
IEEE Transactions on Electron Devices 68 (4), 1654-1658, 2021
4 2021 Effect of a-InGaZnO TFT Channel Thickness under Self-Heating Stress MC Tai, PW Chang, TC Chang, YC Tsao, YL Tsai, HY Tu, YX Wang, ...
ECS Journal of Solid State Science and Technology 8 (10), Q185, 2019
4 2019 Dynamic switching-induced back-carrier-injection in a-InGaZnO thin film transistors MC Tai, YC Tsao, YX Wang, CC Lin, YL Tsai, HY Tu, BS Huang, ...
Journal of Physics D: Applied Physics 54 (2), 025111, 2020
3 2020 Interface defect shielding of electron trapping in a-InGaZnO thin film transistors CC Lin, MC Tai, TC Chang, YC Tsao, YX Wang, YL Tsai, HY Tu, IN Lu, ...
IEEE Transactions on Electron Devices 67 (9), 3645-3649, 2020
3 2020 Abnormal degradation behaviors under negative bias stress in flexible p-Channel low-temperature polycrystalline silicon thin-film transistors after laser lift-off process CC Wu, WCY Ma, TC Chang, YX Wang, MC Tai, YF Tu, YA Chen, HY Tu, ...
IEEE Transactions on Electron Devices 70 (3), 1079-1084, 2023
2 2023 Effect of Different a-InGaZnO TFTs' Channel Thickness upon Self-Heating Stress MC Tai, PW Chang, TC Chang, YC Tsao, YL Tsai, HY Tu, YX Wang, ...
ECS Transactions 90 (1), 121, 2019
1 2019 