Fermi-level pinning and charge neutrality level in germanium A Dimoulas, P Tsipas, A Sotiropoulos, EK Evangelou
Applied physics letters 89 (25), 2006
740 2006 Evidence for graphite-like hexagonal AlN nanosheets epitaxially grown on single crystal Ag (111) P Tsipas, S Kassavetis, D Tsoutsou, E Xenogiannopoulou, E Golias, ...
Applied Physics Letters 103 (25), 2013
321 2013 Silicene: a review of recent experimental and theoretical investigations M Houssa, A Dimoulas, A Molle
Journal of Physics: Condensed Matter 27 (25), 253002, 2015
258 2015 HfO2 high-κ gate dielectrics on Ge (100) by atomic oxygen beam deposition A Dimoulas, G Mavrou, G Vellianitis, E Evangelou, N Boukos, M Houssa, ...
Applied Physics Letters 86 (3), 2005
185 2005 High-quality, large-area MoSe 2 and MoSe 2/Bi 2 Se 3 heterostructures on AlN (0001)/Si (111) substrates by molecular beam epitaxy E Xenogiannopoulou, P Tsipas, KE Aretouli, D Tsoutsou, SA Giamini, ...
Nanoscale 7 (17), 7896-7905, 2015
166 2015 BJ v. Wees, TM Klapwijk, W. vd Graaf, and G. Borghs A Dimoulas, JP Heida
Phys. Rev. Lett 74, 602, 1995
157 1995 Two-dimensional semiconductor HfSe2 and MoSe2/HfSe2 van der Waals heterostructures by molecular beam epitaxy KE Aretouli, P Tsipas, D Tsoutsou, J Marquez-Velasco, ...
Applied Physics Letters 106 (14), 2015
151 2015 Electrical properties of La2O3 and HfO2∕ La2O3 gate dielectrics for germanium metal-oxide-semiconductor devices G Mavrou, S Galata, P Tsipas, A Sotiropoulos, Y Panayiotatos, ...
Journal of Applied Physics 103 (1), 2008
142 2008 Evidence for hybrid surface metallic band in (4× 4) silicene on Ag (111) D Tsoutsou, E Xenogiannopoulou, E Golias, P Tsipas, A Dimoulas
Applied Physics Letters 103 (23), 2013
139 2013 Structural and electrical quality of the high-k dielectric A Dimoulas, G Vellianitis, A Travlos, V Ioannou-Sougleridis, ...
Journal of Applied Physics 92 (1), 426-431, 2002
138 2002 Modeling of negatively charged states at the Ge surface and interfaces P Tsipas, A Dimoulas
Applied Physics Letters 94 (1), 2009
131 2009 Advanced gate stacks for high-mobility semiconductors A Dimoulas, E Gusev, M Heyns, PC McIntyre
Springer 27, 229, 2007
126 2007 Epitaxial 2D SnSe2 / 2D WSe2 van der Waals Heterostructures KE Aretouli, D Tsoutsou, P Tsipas, J Marquez-Velasco, ...
ACS applied materials & interfaces 8 (35), 23222-23229, 2016
123 2016 Strain-induced changes to the electronic structure of germanium H Tahini, A Chroneos, RW Grimes, U Schwingenschlögl, A Dimoulas
Journal of Physics: Condensed Matter 24 (19), 195802, 2012
119 2012 Massless Dirac Fermions in ZrTe2 Semimetal Grown on InAs(111) by van der Waals Epitaxy P Tsipas, D Tsoutsou, S Fragkos, R Sant, C Alvarez, H Okuno, G Renaud, ...
ACS nano 12 (2), 1696-1703, 2018
118 2018 Inorganic–organic core–shell titania nanoparticles for efficient visible light activated photocatalysis NG Moustakas, AG Kontos, V Likodimos, F Katsaros, N Boukos, ...
Applied Catalysis B: Environmental 130, 14-24, 2013
117 2013 Strain dependence of band gaps and exciton energies in pure and mixed transition-metal dichalcogenides RK Defo, S Fang, SN Shirodkar, GA Tritsaris, A Dimoulas, E Kaxiras
Physical Review B 94 (15), 155310, 2016
114 2016 Silicene and germanene: Silicon and germanium in the “flatland” A Dimoulas
Microelectronic engineering 131, 68-78, 2015
106 2015 Interface engineering for Ge metal-oxide–semiconductor devices A Dimoulas, DP Brunco, S Ferrari, JW Seo, Y Panayiotatos, ...
Thin Solid Films 515 (16), 6337-6343, 2007
106 2007 2D materials for nanoelectronics M Houssa, A Dimoulas, A Molle
CRC press, 2016
97 2016 