Common fabrication of different semiconductor devices with different threshold voltages H Kim, K Choi, JY Lee
US Patent App. 14/134,358, 2015
385 2015 Semiconductor gate structure for threshold voltage modulation and method of making same H Kim, K Choi
US Patent 8,932,923, 2015
384 2015 Enabling enhanced reliability and mobility for replacement gate planar and finfet structures T Ando, EA Cartier, K Choi, WL Lai, V Narayanan, R Ramachandran
US Patent App. 14/696,015, 2015
368 2015 Dipole model explaining high-k/metal gate field effect transistor threshold voltage tuning PD Kirsch, P Sivasubramani, J Huang, CD Young, MA Quevedo-Lopez, ...
Applied Physics Letters 92 (9), 2008
215 2008 Method of forming a semiconductor device M Hargrove, RJ Carter, YH Tsang, G Kluth, K Choi
US Patent 8,048,791, 2011
161 2011 Fundamental aspects of HfO2 -based high-k metal gate stack reliability and implications on tinv -scaling E Cartier, A Kerber, T Ando, MM Frank, K Choi, S Krishnan, B Linder, ...
2011 International Electron Devices Meeting, 18.4. 1-18.4. 4, 2011
127 2011 H Harris, K Choi, N Mehta, A Chandolu, N Biswas, G Kipshidze, ...
Applied physics letters 81 (6), 1065-1067, 2002
118 2002 Understanding mobility mechanisms in extremely scaled HfO2 (EOT 0.42 nm) using remote interfacial layer scavenging technique and Vt -tuning dipoles with gate … T Ando, MM Frank, K Choi, C Choi, J Bruley, M Hopstaken, M Copel, ...
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
116 2009 Methods of forming gate structures with multiple work functions and the resulting products K Choi, H Kim
US Patent 9,012,319, 2015
111 2015 Methods of forming replacement gate structures for transistors and the resulting devices R Xie, K Choi, SC Fan, S Ponoth
US Patent 9,257,348, 2016
81 2016 Intrinsic characteristics of high-k devices and implications of fast transient charging effects (FTCE) BH Lee, CD Young, R Choi, JH Sim, G Bersuker, CY Kang, R Harris, ...
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004
78 2004 Extremely scaled gate-first high-k/metal gate stack with EOT of 0.55 nm using novel interfacial layer scavenging techniques for 22nm technology node and beyond K Choi, H Jagannathan, C Choi, L Edge, T Ando, M Frank, P Jamison, ...
2009 Symposium on VLSI Technology, 138-139, 2009
77 * 2009 Origin of the Flatband-Voltage Roll-Off Phenomenon in Metal/High- G Bersuker, CS Park, HC Wen, K Choi, J Price, P Lysaght, HH Tseng, ...
IEEE transactions on electron devices 57 (9), 2047-2056, 2010
75 2010 Metal gate work function engineering using AlNx interfacial layers HN Alshareef, HF Luan, K Choi, HR Harris, HC Wen, MA Quevedo-Lopez, ...
Applied Physics Letters 88 (11), 2006
69 2006 Growth mechanism of TiN film on dielectric films and the effects on the work function K Choi, P Lysaght, H Alshareef, C Huffman, HC Wen, R Harris, H Luan, ...
Thin Solid Films 486 (1-2), 141-144, 2005
65 2005 Comparison of effective work function extraction methods using capacitance and current measurement techniques HC Wen, R Choi, GA Brown, T BosckeBoscke, K Matthews, HR Harris, ...
IEEE Electron Device Letters 27 (7), 598-601, 2006
62 2006 Decoupling the Fermi-level pinning effect and intrinsic limitations on p-type effective work function metal electrodes HC Wen, P Majhi, K Choi, CS Park, HN Alshareef, HR Harris, H Luan, ...
Microelectronic Engineering 85 (1), 2-8, 2008
61 2008 Methods of forming gate structures for semiconductor devices using a replacement gate technique and the resulting devices R Xie, K Choi
US Patent 9,093,467, 2015
59 2015 The effect of metal thickness, overlayer and high-k surface treatment on the effective work function of metal electrode K Choi, HC Wen, H Alshareef, R Harris, P Lysaght, H Luan, P Majhi, ...
Proceedings of 35th European Solid-State Device Research Conference, 2005 …, 2005
58 2005 Enabling enhanced reliability and mobility for replacement gate planar and FinFET structures T Ando, EA Cartier, K Choi, WL Lai, V Narayanan, R Ramachandran
US Patent 9,099,393, 2015
57 2015 
Byoung Hun LeePohang University of Science and TechnologyBestätigte E-Mail-Adresse bei postech.ac.kr