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Puja Ghosh
Puja Ghosh
Assistant Professor, IIIT Ranchi
Bestätigte E-Mail-Adresse bei iiitranchi.ac.in
Titel
Zitiert von
Zitiert von
Jahr
Optimization of ferroelectric tunnel junction TFET in presence of temperature and its RF analysis
P Ghosh, R Goswami, B Bhowmick
Microelectronics Journal 92, 104618, 2019
302019
Investigation of Electrical Characteristics in a Ferroelectric L-patterned Gate Dual Tunnel Diode TFET
P Ghosh, B Bhowmick
IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, 2020
262020
Low-frequency noise analysis of heterojunction SELBOX TFET
P Ghosh, B Bhowmick
Applied Physics A 124, 1-9, 2018
242018
Effect of temperature in selective buried oxide TFET in the presence of trap and its RF analysis
P Ghosh, B Bhowmick
International Journal of RF and Microwave Computer‐Aided Engineering 30 (8 …, 2020
152020
Analysis of kink reduction and reliability issues in low‐voltage DTD‐based SOI TFET
P Ghosh, B Bhowmick
Micro & Nano Letters 15 (3), 130-135, 2020
132020
Optimization of ferroelectric SELBOX TFET and ferroelectric SOI TFET
P Ghosh, B Bhowmick
ECS Journal of Solid State Science and Technology 9 (2), 023001, 2020
132020
Effect of temperature on reliability issues of ferroelectric dopant segregated Schottky barrier tunnel field effect transistor (Fe DS-SBTFET)
P Ghosh, B Bhowmick
Silicon 12 (5), 1137-1144, 2020
122020
Reduction of the kink effect in a SELBOX tunnel FET and its RF/analog performance
P Ghosh, B Bhowmick
Journal of Computational Electronics 18 (4), 1182-1191, 2019
122019
The impact of donor/acceptor types of interface traps on selective buried oxide TFET characteristics
P Ghosh, A Roy, B Bhowmick
Applied Physics A 126, 1-7, 2020
102020
Performance assessment of dielectrically modulated negative capacitance germanium source vertical tunnel FET biosensor for detection of breast cancer cell lines
K Vanlalawmpuia, P Ghosh
AEU-International Journal of Electronics and Communications 171, 154902, 2023
82023
Deep insight into material-dependent DC performance of Fe DS-SBTFET and its noise analysis in the presence of interface traps
P Ghosh, B Bhowmick
AEU-International Journal of Electronics and Communications 117, 153124, 2020
62020
Optimisation of electrical parameters in Fe DS-SBTFET and its application as a digital inverter
P Ghosh, B Bhowmick
International Journal of Electronics 106 (11), 1617-1631, 2019
62019
Noise behaviour of δp+ Si1−xGex layer SELBOX TFET
P Ghosh, B Bhowmick
Indian Journal of Physics 94 (4), 493-500, 2020
42020
The impact of interface traps (acceptor/donor) on fe ds-sbtfet characteristics
P Ghosh, B Bhowmick
TENCON 2019-2019 IEEE Region 10 Conference (TENCON), 73-77, 2019
42019
Electrical characteristics assessment and noise analysis of pocket-doped multi source T-shaped gate tunnel FET
S Kumari, P Ghosh
Microelectronics Journal 144, 106059, 2024
32024
An extended dual source double-gate TFET-based optical sensor for near-infrared-sensing applications
P Ghosh, S Tripathi, WV Devi
Applied Physics A 129 (11), 781, 2023
32023
Electrical performance and noise assessment of vertical ferroelectric tunnel junction based SELBOX TFET
P Ghosh
Physica Scripta 98 (2), 025008, 2023
32023
Performance enhancement of a FET device with ferroelectric tunnel junction and its application as a biosensor
P Ghosh, B Bhowmick
Journal of Computational Electronics 21 (6), 1416-1424, 2022
32022
Study of variability induced by random dopant fluctuation in Fe DS-SBTFET
P Ghosh, B Bhowmick
Microelectronics Journal 125, 105467, 2022
32022
Performance analysis and digital application of vertical L-pattern dual tunnel diode TFET
P Ghosh
Microelectronics Journal 129, 105604, 2022
22022
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