| Electrical properties of β-Ga2O3 single crystals grown by the Czochralski method K Irmscher, Z Galazka, M Pietsch, R Uecker, R Fornari Journal of Applied Physics 110 (6), 2011 | 607 | 2011 |
| Czochralski growth and characterization of β‐Ga2O3 single crystals Z Galazka, R Uecker, K Irmscher, M Albrecht, D Klimm, M Pietsch, ... Crystal Research and Technology 45 (12), 1229-1236, 2010 | 558 | 2010 |
| Experimental electronic structure of In2O3 and Ga2O3 C Janowitz, V Scherer, M Mohamed, A Krapf, H Dwelk, R Manzke, ... New Journal of Physics 13 (8), 085014, 2011 | 426 | 2011 |
| High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes WS Hwang, A Verma, H Peelaers, V Protasenko, S Rouvimov, ... Applied Physics Letters 104 (20), 2014 | 406 | 2014 |
| Schottky barrier height of Au on the transparent semiconducting oxide β-Ga2O3 M Mohamed, K Irmscher, C Janowitz, Z Galazka, R Manzke, R Fornari Applied Physics Letters 101 (13), 2012 | 381 | 2012 |
| The real structure of ε-Ga 2 O 3 and its relation to κ-phase I Cora, F Mezzadri, F Boschi, M Bosi, M Čaplovičová, G Calestani, ... CrystEngComm 19 (11), 1509-1516, 2017 | 347 | 2017 |
| Crystal Structure and Ferroelectric Properties of ε-Ga2O3 Films Grown on (0001)-Sapphire F Mezzadri, G Calestani, F Boschi, D Delmonte, M Bosi, R Fornari Inorganic chemistry 55 (22), 12079-12084, 2016 | 264 | 2016 |
| Comprehensive semiconductor science and technology P Bhattacharya, R Fornari, H Kamimura Newnes, 2011 | 264 | 2011 |
| Homoepitaxial growth of β‐Ga2O3 layers by metal‐organic vapor phase epitaxy G Wagner, M Baldini, D Gogova, M Schmidbauer, R Schewski, M Albrecht, ... physica status solidi (a) 211 (1), 27-33, 2014 | 249 | 2014 |
| The electronic structure of β-Ga2O3 M Mohamed, C Janowitz, I Unger, R Manzke, Z Galazka, R Uecker, ... Applied Physics Letters 97 (21), 2010 | 224 | 2010 |
| Hetero-epitaxy of ε-Ga2O3 layers by MOCVD and ALD F Boschi, M Bosi, T Berzina, E Buffagni, C Ferrari, R Fornari Journal of Crystal Growth 443, 25-30, 2016 | 200 | 2016 |
| Structural properties of Si-doped β-Ga2O3 layers grown by MOVPE D Gogova, G Wagner, M Baldini, M Schmidbauer, K Irmscher, R Schewski, ... Journal of Crystal Growth 401, 665-669, 2014 | 192 | 2014 |
| Properties of rare-earth scandate single crystals (Re= Nd− Dy) R Uecker, B Velickov, D Klimm, R Bertram, M Bernhagen, M Rabe, ... Journal of Crystal Growth 310 (10), 2649-2658, 2008 | 188 | 2008 |
| On the nature and temperature dependence of the fundamental band gap of In2O3 K Irmscher, M Naumann, M Pietsch, Z Galazka, R Uecker, T Schulz, ... physica status solidi (a) 211 (1), 54-58, 2014 | 137 | 2014 |
| Ga 2 O 3 polymorphs: tailoring the epitaxial growth conditions M Bosi, P Mazzolini, L Seravalli, R Fornari Journal of Materials Chemistry C 8 (32), 10975-10992, 2020 | 134 | 2020 |
| Epitaxial growth of ferroelectric oxide films J Schwarzkopf, R Fornari Progress in crystal growth and characterization of materials 52 (3), 159-212, 2006 | 128 | 2006 |
| Thermal stability of ε-Ga2O3 polymorph R Fornari, M Pavesi, V Montedoro, D Klimm, F Mezzadri, I Cora, B Pécz, ... Acta Materialia 140, 411-416, 2017 | 127 | 2017 |
| ε-Ga2O3 epilayers as a material for solar-blind UV photodetectors M Pavesi, F Fabbri, F Boschi, G Piacentini, A Baraldi, M Bosi, E Gombia, ... Materials chemistry and physics 205, 502-507, 2018 | 122 | 2018 |
| Analysis of the scattering mechanisms controlling electron mobility in β-Ga2O3 crystals A Parisini, R Fornari Semiconductor Science and Technology 31 (3), 035023, 2016 | 106 | 2016 |
| Theoretical and experimental investigation of optical absorption anisotropy in β-Ga2O3 F Ricci, F Boschi, A Baraldi, A Filippetti, M Higashiwaki, A Kuramata, ... Journal of Physics: Condensed Matter 28 (22), 224005, 2016 | 100 | 2016 |
Matteo BosiIMEM - CNR, Area delle Scienze 37A, 43124 Parma, ItalyBestätigte E-Mail-Adresse bei imem.cnr.it
