| 13 mW operation of a 295–310 nm AlGaN UV-B LED with a p-AlGaN transparent contact layer for real world applications MA Khan, N Maeda, M Jo, Y Akamatsu, R Tanabe, Y Yamada, ... Journal of Materials Chemistry C 7 (1), 143-152, 2019 | 109 | 2019 |
| In-situ heavily p-type doping of over 1020 cm− 3 in semiconducting BaSi2 thin films for solar cells applications M Ajmal Khan, KO Hara, W Du, M Baba, K Nakamura, M Suzuno, K Toko, ... Applied physics letters 102 (11), 2013 | 98 | 2013 |
| Achieving 9.6% efficiency in 304 nm p-AlGaN UVB LED via increasing the holes injection and light reflectance MA Khan, N Maeda, J Yun, M Jo, Y Yamada, H Hirayama Scientific reports 12 (1), 2591, 2022 | 69 | 2022 |
| External Quantum Efficiency of 6.5% at 300 nm Emission and 4.7% at 310 nm Emission on Bare Wafer of AlGaN-Based UVB LEDs MA Khan, Y Itokazu, N Maeda, M Jo, Y Yamada, H Hirayama ACS Appl. Electron. Mater. 2 (7), 1892–1907, 2020 | 62 | 2020 |
| Improved photoresponsivity of semiconducting BaSi2 epitaxial films grown on a tunnel junction for thin-film solar cells W Du, M Suzuno, M Ajmal Khan, K Toh, M Baba, K Nakamura, K Toko, ... Applied physics letters 100 (15), 2012 | 62 | 2012 |
| Electrical characterization and conduction mechanism of impurity-doped BaSi2 films grown on Si (111) by molecular beam epitaxy MA Khan, T Saito, K Nakamura, M Baba, W Du, K Toh, K Toko, ... Thin Solid Films 522, 95-99, 2012 | 48 | 2012 |
| Precipitation control and activation enhancement in boron-doped p+-BaSi2 films grown by molecular beam epitaxy MA Khan, K Nakamura, W Du, K Toko, N Usami, T Suemasu Applied physics letters 104 (25), 2014 | 45 | 2014 |
| High internal quantum efficiency and optically pumped stimulated emission in AlGaN-based UV-C multiple quantum wells H Murotani, R Tanabe, K Hisanaga, A Hamada, K Beppu, N Maeda, ... Applied Physics Letters 117 (16), 2020 | 41 | 2020 |
| Fabrication and characterization of BaSi2 epitaxial films over 1 µm in thickness on Si (111) R Takabe, K Nakamura, M Baba, W Du, MA Khan, K Toko, M Sasase, ... Japanese Journal of Applied Physics 53 (4S), 04ER04, 2014 | 40 | 2014 |
| Influence of undoped‐AlGaN final barrier of MQWs on the performance of lateral‐type UVB LEDs M Ajmal Khan, E Matsuura, Y Kashima, H Hirayama physica status solidi (a) 216 (18), 1900185, 2019 | 38 | 2019 |
| Suppressing the efficiency droop in AlGaN-based UVB LEDs M Usman, S Malik, MA Khan, H Hirayama Nanotechnology 32 (21), 215703, 2021 | 36 | 2021 |
| Correlation between excitons recombination dynamics and internal quantum efficiency of AlGaN-based UV-A multiple quantum wells H Murotani, H Miyoshi, R Takeda, H Nakao, M Ajmal Khan, N Maeda, ... Journal of Applied Physics 128 (10), 2020 | 35 | 2020 |
| Beyond 53% internal quantum efficiency in a AlGaN quantum well at 326 nm UVA emission and single-peak operation of UVA LED MA Khan, R Takeda, Y Yamada, N Maeda, M Jo, H Hirayama Optics Letters 45 (2), 495-498, 2020 | 34 | 2020 |
| Performance enhancement of AlGaN deep-ultraviolet laser diode using compositional Al-grading of Si-doped layers MN Sharif, MA Khan, Q Wali, I Demir, F Wang, Y Liu Optics & Laser Technology 152, 108156, 2022 | 33 | 2022 |
| Improved external quantum efficiency of 293 nm AlGaN UVB LED grown on an AlN template MA Khan, T Matsumoto, N Maeda, N Kamata, H Hirayama Japanese Journal of Applied Physics 58 (SA), SAAF01, 2018 | 33 | 2018 |
| Spray pyrolysis developed Nd doped Co3O4 nanostructured thin films and their structural, and opto-nonlinear properties for optoelectronics applications M Shkir, A Khan, M Imran, MA Khan, RA Zargar, T Alshahrani, KDA Kumar, ... Optics & Laser Technology 150, 107959, 2022 | 32 | 2022 |
| Impact of Mg level on lattice relaxation in a p-AlGaN hole source layer and attempting excimer laser annealing on p-AlGaN HSL of UVB emitters MA Khan, JP Bermundo, Y Ishikawa, H Ikenoue, S Fujikawa, E Matsuura, ... Nanotechnology 32 (5), 055702, 2020 | 31 | 2020 |
| Milliwatt power UV-A LEDs developed by using n-AlGaN superlattice buffer layers grown on AlN templates T Matsumoto, MA Khan, N Maeda, S Fujikawa, N Kamata, H Hirayama Journal of Physics D: Applied Physics 52 (11), 115102, 2019 | 31 | 2019 |
| Molecular Beam Epitaxy of BaSi2 Films with Grain Size over 4 µm on Si (111) M Baba, K Nakamura, W Du, MA Khan, S Koike, K Toko, N Usami, N Saito, ... Japanese Journal of Applied Physics 51 (9R), 098003, 2012 | 31 | 2012 |
| Tackling food insecurity using remote sensing and machine learning based crop yield prediction U Shafi, R Mumtaz, Z Anwar, MM Ajmal, MA Khan, Z Mahmood, M Qamar, ... IEEE Access, 2023 | 29 | 2023 |
Hideki HirayamaRIKENBestätigte E-Mail-Adresse bei riken.jp
