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Renato Giacomini
Renato Giacomini
FEI
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Zitiert von
Zitiert von
Jahr
Modeling silicon on insulator MOS transistors with nonrectangular-gate layouts
R Giacomini, JA Martino
Journal of the Electrochemical Society 153 (3), G218, 2006
392006
Trapezoidal cross-sectional influence on FinFET threshold voltage and corner effects
R Giacomini, JA Martino
Journal of the Electrochemical Society 155 (4), H213, 2008
382008
Ionizing radiation hardness tests of GaN HEMTs for harsh environments
ACV Bôas, MAA de Melo, RBB Santos, R Giacomini, NH Medina, ...
Microelectronics Reliability 116, 114000, 2021
332021
Illuminated to dark ratio improvement in lateral SOI PIN photodiodes at high temperatures
C Novo, R Giacomini, R Doria, A Afzalian, D Flandre
Semiconductor Science and Technology 29 (7), 075008, 2014
292014
Ionizing radiation effects on a COTS low-cost RISC microcontroller
FGH Leite, RBB Santos, NH Medina, VAP Aguiar, RC Giacomini, N Added, ...
2017 18th IEEE Latin American Test Symposium (LATS), 1-4, 2017
272017
Trapezoidal SOI FinFET analog parameters' dependence on cross-section shape
RT Bühler, R Giacomini, MA Pavanello, JA Martino
Semiconductor science and technology 24 (11), 115017, 2009
222009
Bio-Amplifier based on MOS bipolar Pseudo-Resistors: A New Approach using its non-linear characteristic
PL Benko, M Galeti, CF Pereira, JC Lucchi, RC Giacomini
Journal of Integrated Circuits and Systems 11 (2), 132-139, 2016
162016
Innovative approach for electrical characterisation of pseudo‐resistors
PL Benko, M Galeti, CF Pereira, JC Lucchi, R Giacomini
Electronics Letters 52 (25), 2031-2032, 2016
122016
Transitory recovery time of bio-potential amplifiers that include CMOS pseudo-resistors
CF Pereira, PL Benko, JC Lucchi, RC Giacomini
2014 International Caribbean Conference on Devices, Circuits and Systems …, 2014
122014
Fin shape influence on the analog performance of standard and strained MuGFETs
RT Bühler, JA Martino, PGD Agopian, R Giacomini, E Simoen, C Claeys
2010 IEEE International SOI Conference (SOI), 1-2, 2010
122010
Radiation Hardness of GaN HEMTs to TID Effects: COTS for harsh environments
ACV Bôas, MAA De Melo, RBB Santos, R Giacomini, NH Medina, ...
2019 19th European Conference on Radiation and Its Effects on Components and …, 2019
102019
Teraohm pseudo-resistor experimental characterization aiming at implementation of bio-amplifiers
CF Pereira, PL Benko, JC Lucchi, RC Giacomini
2016 31st Symposium on Microelectronics Technology and Devices (SBMicro), 1-4, 2016
102016
Operation of lateral SOI PIN photodiodes with back-gate bias and intrinsic length variation
C Novo, R Giacomini, A Afzalian, D Flandre
ECS Transactions 53 (5), 121, 2013
102013
Experimental study and modeling of pseudo-resistor's non-linearity
CF Pereira, PL Benko, M Galeti, JC Lucchi, RC Giacomini
2017 32nd Symposium on Microelectronics Technology and Devices (SBMicro), 1-4, 2017
92017
First successful SEE measurements with heavy ions in Brazil
NH Medina, MAG Silveira, N Added, VAP Aguiar, R Giacomini, ...
2014 IEEE Radiation Effects Data Workshop (REDW), 1-3, 2014
92014
Filter-free color pixel sensor using gated PIN photodiodes and machine learning techniques
JB Junior, A Pereira, R Buhler, A Perin, C Novo, M Galeti, J Oliveira, ...
Microelectronics Journal 120, 105337, 2022
82022
Assessment of ionizing radiation hardness of a GaN field-effect transistor
ACV Bôas, MAA de Melo, RBB Santos, RC Giacomini, NH Medina, ...
2019 34th Symposium on Microelectronics Technology and Devices (SBMicro), 1-4, 2019
82019
Sensing magnetic fields in any direction using FinFETs and L-gate FinFETs
AL Perin, R Giacomini
2012 IEEE International SOI Conference (SOI), 1-2, 2012
82012
An analytical estimation model for the spreading resistance of Double-Gate FinFETs
CT Malheiro, ASN Pereira, R Giacomini
2012 8th International Caribbean Conference on Devices, Circuits and Systems …, 2012
82012
A Commercial off-the-shelf pMOS Transistor as X-ray and Heavy Ion Detector
MAG Silveira, MAA Melo, VAP Aguiar, A Rallo, RBB Santos, NH Medina, ...
Journal of Physics: Conference Series 630 (1), 012012, 2015
72015
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