| A 65-nm CMOS fully integrated transceiver module for 60-GHz wireless HD applications A Siligaris, O Richard, B Martineau, C Mounet, F Chaix, R Ferragut, ... IEEE Journal of Solid-State Circuits 46 (12), 3005-3017, 2011 | 229 | 2011 |
| A 53-to-68GHz 18dBm power amplifier with an 8-way combiner in standard 65nm CMOS B Martineau, V Knopik, A Siligaris, F Gianesello, D Belot 2010 IEEE International Solid-State Circuits Conference-(ISSCC), 428-429, 2010 | 127 | 2010 |
| A 60 GHz power amplifier with 14.5 dBm saturation power and 25% peak PAE in CMOS 65 nm SOI A Siligaris, Y Hamada, C Mounet, C Raynaud, B Martineau, N Deparis, ... IEEE Journal of Solid-State Circuits 45 (7), 1286-1294, 2010 | 116 | 2010 |
| A 17.5-to-20.94 GHz and 35-to-41.88 GHz PLL in 65nm CMOS for wireless HD applications O Richard, A Siligaris, F Badets, C Dehos, C Dufis, P Busson, P Vincent, ... 2010 IEEE International Solid-State Circuits Conference-(ISSCC), 252-253, 2010 | 98 | 2010 |
| A programmable frequency multiplier-by-29 architecture for millimeter wave applications C Jany, A Siligaris, JL Gonzalez-Jimenez, P Vincent, P Ferrari IEEE Journal of Solid-State Circuits 50 (7), 1669-1679, 2015 | 65 | 2015 |
| Silicon interposer: A versatile platform towards full-3D integration of wireless systems at millimeter-wave frequencies O El Bouayadi, L Dussopt, Y Lamy, C Dehos, C Ferrandon, A Siligaris, ... 2015 IEEE 65th Electronic Components and Technology Conference (ECTC), 973-980, 2015 | 42 | 2015 |
| A low power 60-GHz 2.2-Gbps UWB transceiver with integrated antennas for short range communications A Siligaris, F Chaix, M Pelissier, V Puyal, J Zevallos, L Dussopt, P Vincent 2013 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 297-300, 2013 | 40 | 2013 |
| High-frequency and noise performances of 65-nm MOSFET at liquid nitrogen temperature A Siligaris, G Pailloncy, S Delcourt, R Valentin, S Lepilliet, F Danneville, ... IEEE Transactions on Electron Devices 53 (8), 1902-1908, 2006 | 39 | 2006 |
| A 125.5-157 GHz 8 dB NF and 16 dB of gain D-band low noise amplifier in CMOS SOI 45 nm A Hamani, A Siligaris, B Blampey, C Dehos, JLG Jimenez 2020 IEEE/MTT-S International Microwave Symposium (IMS), 197-200, 2020 | 38 | 2020 |
| Active properties of carbon nanotube field-effect transistors deduced from S parameters measurements JM Bethoux, H Happy, A Siligaris, G Dambrine, J Borghetti, V Derycke, ... IEEE transactions on nanotechnology 5 (4), 335-342, 2006 | 36 | 2006 |
| A D-Band Multichannel TX System-in-Package Achieving 84.48 Gb/s With 64-QAM Based on 45-nm CMOS and Low-Cost PCB Technology A Hamani, FF Manzillo, A Siligaris, N Cassiau, B Blampey, F Hameau, ... IEEE Transactions on Microwave Theory and Techniques 70 (7), 3385-3395, 2022 | 34* | 2022 |
| Performance improvement versus CPW and loss distribution analysis of slow-wave CPW in 65 nm HR-SOI CMOS technology XL Tang, AL Franc, E Pistono, A Siligaris, P Vincent, P Ferrari, ... IEEE Transactions on Electron Devices 59 (5), 1279-1285, 2012 | 34 | 2012 |
| A new empirical nonlinear model for sub-250 nm channel MOSFET A Siligaris, G Dambrine, D Schreurs, F Danneville IEEE Microwave and Wireless Components Letters 13 (10), 449-451, 2003 | 32 | 2003 |
| A Wideband and High-Linearity E-B and Transmitter Integrated in a 55-nm SiGe Technology for Backhaul Point-to-Point 10-Gb/s Links D del Rio, I Gurutzeaga, A Rezola, JF Sevillano, I Velez, SE Gunnarsson, ... IEEE Transactions on Microwave Theory and Techniques 65 (8), 2990-3001, 2017 | 31 | 2017 |
| A 60 GHz UWB impulse radio transmitter with integrated antenna in CMOS65nm SOI technology A Siligaris, N Deparis, R Pilard, D Gloria, C Loyez, N Rolland, L Dussopt, ... 2011 IEEE 11th topical meeting on silicon monolithic integrated circuits in …, 2011 | 30 | 2011 |
| High frequency low noise potentialities of down to 65 nm technology nodes MOSFETs G Dambrine, D Gloria, P Scheer, C Raynaud, F Danneville, S Lepilliet, ... European Gallium Arsenide and Other Semiconductor Application Symposium …, 2005 | 29 | 2005 |
| A 84.48-Gb/s 64-QAM CMOS D-band channel-bonding Tx front-end with integrated multi-LO frequency generation A Hamani, A Siligaris, F Barrera, C Dehos, N Cassiau, B Blampey, ... IEEE Solid-State Circuits Letters 3, 346-349, 2020 | 28 | 2020 |
| A multichannel programmable high order frequency multiplier for channel bonding and full duplex transceivers at 60 GHz band A Siligaris, JL Gonzalez-Jimenez, C Jany, B Blampey, A Boulmirat, ... 2020 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 259-262, 2020 | 28 | 2020 |
| A compact 3D silicon interposer package with integrated antenna for 60GHz wireless applications Y Lamy, L Dussopt, O El Bouayadi, C Ferrandon, A Siligaris, C Dehos, ... 2013 IEEE International 3D Systems Integration Conference (3DIC), 1-6, 2013 | 25 | 2013 |
| CMOS SOI Technology for WPAN: Application to 60 GHZ LNA A Siligaris, C Mounet, B Reig, P Vincent, A Michel Emerging Technologies and Circuits, 123-130, 2010 | 24 | 2010 |
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