Artikel mit Open-Access-Mandaten - Koen MartensWeitere Informationen
Nicht verfügbar: 12
The VO2 interface, the metal-insulator transition tunnel junction, and the metal-insulator transition switch On-Off resistance
K Martens, IP Radu, S Mertens, X Shi, L Nyns, S Cosemans, P Favia, ...
Journal of Applied Physics 112 (12), 2012
Mandate: Research Foundation (Flanders)
Determining weak Fermi-level pinning in MOS devices by conductance and capacitance analysis and application to GaAs MOS devices
K Martens, WF Wang, A Dimoulas, G Borghs, M Meuris, G Groeseneken, ...
Solid-state electronics 51 (8), 1101-1108, 2007
Mandate: Research Foundation (Flanders)
BioFET technology: Aggressively scaled pMOS FinFET as biosensor
K Martens, S Santermans, M Gupta, G Hellings, R Wuytens, B Du Bois, ...
2019 IEEE International Electron Devices Meeting (IEDM), 18.6. 1-18.6. 4, 2019
Mandate: European Commission
Impact of processing and stack optimization on the reliability of perpendicular STT-MRAM
S Van Beek, K Martens, P Roussel, S Couet, L Souriau, J Swerts, W Kim, ...
2017 IEEE International Reliability Physics Symposium (IRPS), 5A-1.1-5A-1.5, 2017
Mandate: Research Foundation (Flanders)
Four point probe ramped voltage stress as an efficient method to understand breakdown of STT-MRAM MgO tunnel junctions
S Van Beek, K Martens, P Roussel, G Donadio, J Swerts, S Mertens, ...
2015 IEEE International Reliability Physics Symposium, MY. 4.1-MY. 4.6, 2015
Mandate: Research Foundation (Flanders)
A fast and accurate method to study the impact of interface traps on germanium MOS performance
G Hellings, G Eneman, J Mitard, K Martens, WE Wang, T Hoffmann, ...
IEEE Transactions on Electron Devices 58 (4), 938-944, 2011
Mandate: Research Foundation (Flanders)
Electronic voltage control of magnetic anisotropy at room temperature in high- trilayer
BF Vermeulen, J Swerts, S Couet, M Popovici, IP Radu, J Van de Vondel, ...
Physical Review Materials 4 (11), 114415, 2020
Mandate: Research Foundation (Flanders)
Negative bias temperature instability on Si-passivated Ge-interface
M Aoulaiche, B Kaczer, B De Jaeger, M Houssa, K Martens, R Degraeve, ...
2008 IEEE International Reliability Physics Symposium, 358-362, 2008
Mandate: Research Foundation (Flanders)
Electrical Characterization of Leaky Charge-Trapping High- MOS Devices Using Pulsed –
K Martens, M Rosmeulen, B Kaczer, G Groeseneken, HE Maes
IEEE electron device letters 28 (5), 436-439, 2007
Mandate: Research Foundation (Flanders)
Voltage acceleration and pulse dependence of barrier breakdown in MgO based magnetic tunnel junctions
S Van Beek, K Martens, P Roussel, G Donadio, J Swerts, S Mertens, ...
2016 IEEE International Reliability Physics Symposium (IRPS), MY-4-1-MY-4-4, 2016
Mandate: Research Foundation (Flanders)
BioFETs and Nanopore FETs: Nanoscale Silicon Field-Effect Transistors for Single-Molecule Sensing
K Martens, D Barge, L Liu, S Santermans, J Delport, K Willems, J Gevers, ...
ECS Transactions 111 (1), 235, 2023
Mandate: Research Foundation (Flanders)
Signal to noise ratio in nanoscale bioFETs
CAB Mori, K Martens, E Simoen, P Van Dorpe, PG Der Agopian, ...
Solid-State Electronics 194, 108358, 2022
Mandate: Fundação de Amparo à Pesquisa do Estado de São Paulo
Verfügbar: 23
High-performance deep submicron Ge pMOSFETs with halo implants
G Nicholas, B De Jaeger, DP Brunco, P Zimmerman, G Eneman, ...
IEEE Transactions on Electron Devices 54 (9), 2503-2511, 2007
Mandate: Research Foundation (Flanders)
Metal‐Insulator Transition in ALD VO2 Ultrathin Films and Nanoparticles: Morphological Control
AP Peter, K Martens, G Rampelberg, M Toeller, JM Ablett, J Meersschaut, ...
Advanced Functional Materials 25 (5), 679-686, 2015
Mandate: Research Foundation (Flanders)
In situ X-ray diffraction study of the controlled oxidation and reduction in the V–O system for the synthesis of VO 2 and V 2 O 3 thin films
G Rampelberg, B De Schutter, W Devulder, K Martens, I Radu, ...
Journal of Materials Chemistry C 3 (43), 11357-11365, 2015
Mandate: Research Foundation (Flanders)
Atomic layer deposition of vanadium oxides: process and application review
VP Prasadam, N Bahlawane, F Mattelaer, G Rampelberg, C Detavernier, ...
Materials Today Chemistry 12, 396-423, 2019
Mandate: Research Foundation (Flanders), National Natural Science Foundation of China …
Switching mechanism in two-terminal vanadium dioxide devices
IP Radu, B Govoreanu, S Mertens, X Shi, M Cantoro, M Schaekers, ...
Nanotechnology 26 (16), 165202, 2015
Mandate: Research Foundation (Flanders)
Contact resistivity and Fermi-level pinning in n-type Ge contacts with epitaxial Si-passivation
K Martens, R Rooyackers, A Firrincieli, B Vincent, R Loo, B De Jaeger, ...
Applied Physics Letters 98 (1), 2011
Mandate: Research Foundation (Flanders)
Transition metal contacts to graphene
M Politou, I Asselberghs, I Radu, T Conard, O Richard, CS Lee, K Martens, ...
Applied Physics Letters 107 (15), 2015
Mandate: Research Foundation (Flanders)
Field Effect and Strongly Localized Carriers in the Metal-Insulator Transition Material
K Martens, JW Jeong, N Aetukuri, C Rettner, N Shukla, E Freeman, ...
Physical Review Letters 115 (19), 196401, 2015
Mandate: Research Foundation (Flanders)
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