Folgen
Stephen McDonnell
Stephen McDonnell
University of Virginia
Bestätigte E-Mail-Adresse bei virginia.edu - Startseite
Titel
Zitiert von
Zitiert von
Jahr
The effect of chemical residues on the physical and electrical properties of chemical vapor deposited graphene transferred to SiO2
A Pirkle, J Chan, A Venugopal, D Hinojos, CW Magnuson, S McDonnell, ...
Applied Physics Letters 99 (12), 2011
11652011
Defect-Dominated Doping and Contact Resistance in MoS2
S McDonnell, R Addou, C Buie, RM Wallace, CL Hinkle
ACS nano 8 (3), 2880-2888, 2014
9122014
MoS2 P-type Transistors and Diodes Enabled by High Work Function MoOx Contacts
S Chuang, C Battaglia, A Azcatl, S McDonnell, JS Kang, X Yin, M Tosun, ...
Nano letters 14 (3), 1337-1342, 2014
6532014
Hole Selective MoOx Contact for Silicon Solar Cells
C Battaglia, X Yin, M Zheng, ID Sharp, T Chen, S McDonnell, A Azcatl, ...
Nano letters 14 (2), 967-971, 2014
6362014
2D materials advances: from large scale synthesis and controlled heterostructures to improved characterization techniques, defects and applications
Z Lin, A McCreary, N Briggs, S Subramanian, K Zhang, Y Sun, X Li, ...
2D Materials 3 (4), 042001, 2016
5572016
GaAs interfacial self-cleaning by atomic layer deposition
CL Hinkle, AM Sonnet, EM Vogel, S McDonnell, GJ Hughes, M Milojevic, ...
Applied Physics Letters 92 (7), 2008
4942008
Highly Scalable, Atomically Thin WSe2 Grown via Metal–Organic Chemical Vapor Deposition
SM Eichfeld, L Hossain, YC Lin, AF Piasecki, B Kupp, AG Birdwell, ...
ACS nano 9 (2), 2080-2087, 2015
4652015
Nitrogen doping of graphene and its effect on quantum capacitance, and a new insight on the enhanced capacitance of N-doped carbon
LL Zhang, X Zhao, H Ji, MD Stoller, L Lai, S Murali, S Mcdonnell, ...
Energy & Environmental Science 5 (11), 9618-9625, 2012
4482012
Toward the controlled synthesis of hexagonal boron nitride films
A Ismach, H Chou, DA Ferrer, Y Wu, S McDonnell, HC Floresca, ...
ACS nano 6 (7), 6378-6385, 2012
3862012
HfO2 on MoS2 by Atomic Layer Deposition: Adsorption Mechanisms and Thickness Scalability
S McDonnell, B Brennan, A Azcatl, N Lu, H Dong, C Buie, J Kim, ...
ACS nano 7 (11), 10354-10361, 2013
3312013
Impurities and Electronic Property Variations of Natural MoS2 Crystal Surfaces
R Addou, S McDonnell, D Barrera, Z Guo, A Azcatl, J Wang, H Zhu, ...
ACS nano 9 (9), 9124-9133, 2015
3082015
Air Stable p-Doping of WSe2 by Covalent Functionalization
P Zhao, D Kiriya, A Azcatl, C Zhang, M Tosun, YS Liu, M Hettick, JS Kang, ...
ACS nano 8 (10), 10808-10814, 2014
2812014
Reducing extrinsic performance-limiting factors in graphene grown by chemical vapor deposition
J Chan, A Venugopal, A Pirkle, S McDonnell, D Hinojos, CW Magnuson, ...
ACS nano 6 (4), 3224-3229, 2012
2772012
HfSe2 Thin Films: 2D Transition Metal Dichalcogenides Grown by Molecular Beam Epitaxy
R Yue, AT Barton, H Zhu, A Azcatl, LF Pena, J Wang, X Peng, N Lu, ...
ACS nano 9 (1), 474-480, 2015
2582015
MoS2 functionalization for ultra-thin atomic layer deposited dielectrics
A Azcatl, S McDonnell, S KC, X Peng, H Dong, X Qin, R Addou, GI Mordi, ...
Applied Physics Letters 104 (11), 2014
2392014
Hole contacts on transition metal dichalcogenides: Interface chemistry and band alignments
S McDonnell, A Azcatl, R Addou, C Gong, C Battaglia, S Chuang, K Cho, ...
ACS nano 8 (6), 6265-6272, 2014
2232014
Passivation of a corrosion resistant high entropy alloy in non-oxidizing sulfate solutions
KF Quiambao, SJ McDonnell, DK Schreiber, AY Gerard, KM Freedy, P Lu, ...
Acta materialia 164, 362-376, 2019
1912019
Contact Metal–MoS2 Interfacial Reactions and Potential Implications on MoS2-Based Device Performance
CM Smyth, R Addou, S McDonnell, CL Hinkle, RM Wallace
The Journal of Physical Chemistry C 120 (27), 14719-14729, 2016
1672016
MoS2–Titanium Contact Interface Reactions
S McDonnell, C Smyth, CL Hinkle, RM Wallace
ACS applied materials & interfaces 8 (12), 8289-8294, 2016
1612016
Atomically-thin layered films for device applications based upon 2D TMDC materials
SJ McDonnell, RM Wallace
Thin Solid Films 616, 482-501, 2016
1602016
Das System kann den Vorgang jetzt nicht ausführen. Versuchen Sie es später erneut.
Artikel 1–20