A fluorescence resonance energy transfer-derived structure of a quantum dot-protein bioconjugate nanoassembly IL Medintz, JH Konnert, AR Clapp, I Stanish, ME Twigg, H Mattoussi, ...
Proceedings of the National Academy of Sciences 101 (26), 9612-9617, 2004
384 2004 Influence of MOVPE growth conditions on carbon and silicon concentrations in GaN DD Koleske, AE Wickenden, RL Henry, ME Twigg
Journal of crystal growth 242 (1-2), 55-69, 2002
367 2002 GaN decomposition in H2 and N2 at MOVPE temperatures and pressures DD Koleske, AE Wickenden, RL Henry, JC Culbertson, ME Twigg
Journal of crystal growth 223 (4), 466-483, 2001
278 2001 Thiol-terminated di-, tri-, and tetraethylene oxide functionalized gold nanoparticles: a water-soluble, charge-neutral cluster EE Foos, AW Snow, ME Twigg, MG Ancona
Chemistry of Materials 14 (5), 2401-2408, 2002
178 2002 Resistivity control in unintentionally doped GaN films grown by MOCVD AE Wickenden, DD Koleske, RL Henry, ME Twigg, M Fatemi
Journal of crystal growth 260 (1-2), 54-62, 2004
145 2004 Compliant substrates: a comparative study of the relaxation mechanisms of strained films bonded to high and low viscosity oxides KD Hobart, FJ Kub, M Fatemi, ME Twigg, PE Thompson, TS Kuan, ...
Journal of Electronic Materials 29, 897-900, 2000
117 2000 Enhanced GaN decomposition in H2 near atmospheric pressures DD Koleske, AE Wickenden, RL Henry, ME Twigg, JC Culbertson, ...
Applied physics letters 73 (14), 2018-2020, 1998
100 1998 Review of LiFePO4 phase transition mechanisms and new observations from x-ray absorption spectroscopy CT Love, A Korovina, CJ Patridge, KE Swider-Lyons, ME Twigg, ...
Journal of The Electrochemical Society 160 (5), A3153, 2013
81 2013 Technique for perfecting the active regions of wide bandgap semiconductor nitride devices M Peckerar, R Henry, D Koleske, A Wickenden, CR Eddy Jr, R Holm, ...
US Patent 7,198,970, 2007
76 2007 Lattice walks by long jumps JD Wrigley, ME Twigg, G Ehrlich
The Journal of chemical physics 93 (4), 2885-2902, 1990
75 1990 Structure of stacking faults formed during the forward bias of ME Twigg, RE Stahlbush, M Fatemi, SD Arthur, JB Fedison, JB Tucker, ...
Applied physics letters 82 (15), 2410-2412, 2003
74 2003 Surface segregation and structure of Sb-doped Si (100) films grown at low temperature by molecular beam epitaxy KD Hobart, DJ Godbey, ME Twigg, M Fatemi, PE Thompson, DS Simons
Surface Science 334 (1-3), 29-38, 1995
72 1995 The influence of OMVPE growth pressure on the morphology, compensation, and doping of GaN and related alloys AE Wickenden, DD Koleske, RL Henry, RJ Gorman, ME Twigg, M Fatemi, ...
Journal of Electronic Materials 29, 21-26, 2000
70 2000 Growth of high quality, epitaxial InSb nanowires HD Park, SM Prokes, ME Twigg, Y Ding, ZL Wang
Journal of Crystal Growth 304 (2), 399-401, 2007
68 2007 Nondestructive analysis of threading dislocations in GaN by electron channeling contrast imaging YN Picard, JD Caldwell, ME Twigg, CR Eddy, MA Mastro, RL Henry, ...
Applied Physics Letters 91 (9), 2007
66 2007 Low‐temperature cleaning processes for Si molecular beam epitaxy PE Thompson, ME Twigg, DJ Godbey, KD Hobart, DS Simons
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1993
65 1993 Defect mechanisms in degradation of 1.3-μm wavelength channeled-substrate buried heterostructure lasers SNG Chu, S Nakahara, ME Twigg, LA Koszi, EJ Flynn, AK Chin, ...
Journal of applied physics 63 (3), 611-623, 1988
65 1988 Resolving the Burgers vector for individual GaN dislocations by electron channeling contrast imaging YN Picard, ME Twigg, JD Caldwell, CR Eddy Jr, MA Mastro, RT Holm
Scripta Materialia 61 (8), 773-776, 2009
63 2009 Increasing efficiency of photoelectronic conversion by encapsulation of photosynthetic reaction center proteins in arrayed carbon nanotube electrode N Lebedev, SA Trammell, S Tsoi, A Spano, JH Kim, J Xu, ME Twigg, ...
Langmuir 24 (16), 8871-8876, 2008
63 2008 MOCVD growth of thick AlN and AlGaN superlattice structures on Si substrates MA Mastro, CR Eddy Jr, DK Gaskill, ND Bassim, J Casey, A Rosenberg, ...
Journal of crystal growth 287 (2), 610-614, 2006
62 2006 