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IEEE Transactions on nuclear science 60 (6), 4080-4086, 2013
122 2013 Effects of applied bias and high field stress on the radiation response of GaN/AlGaN HEMTs J Chen, YS Puzyrev, R Jiang, EX Zhang, MW McCurdy, DM Fleetwood, ...
IEEE Transactions on Nuclear Science 62 (6), 2423-2430, 2015
116 2015 Impact of proton irradiation on deep level states in n-GaN Z Zhang, AR Arehart, E Cinkilic, J Chen, EX Zhang, DM Fleetwood, ...
Applied Physics Letters 103 (4), 2013
78 2013 Total-ionizing-dose radiation effects in AlGaN/GaN HEMTs and MOS-HEMTs X Sun, OI Saadat, J Chen, EX Zhang, S Cui, T Palacios, DM Fleetwood, ...
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76 2013 Effects of proton-induced displacement damage on gallium nitride HEMTs in RF power amplifier applications NE Ives, J Chen, AF Witulski, RD Schrimpf, DM Fleetwood, RW Bruce, ...
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70 2015 Multiple defects cause degradation after high field stress in AlGaN/GaN HEMTs R Jiang, X Shen, J Fang, P Wang, EX Zhang, J Chen, DM Fleetwood, ...
IEEE Transactions on Device and Materials Reliability 18 (3), 364-376, 2018
64 2018 Worst-case bias for proton and 10-keV X-ray irradiation of AlGaN/GaN HEMTs R Jiang, EX Zhang, MW McCurdy, J Chen, X Shen, P Wang, ...
IEEE Transactions on Nuclear Science 64 (1), 218-225, 2016
58 2016 Gate bias dependence of defect-mediated hot-carrier degradation in GaN HEMTs Y Puzyrev, S Mukherjee, J Chen, T Roy, M Silvestri, RD Schrimpf, ...
IEEE Transactions on Electron Devices 61 (5), 1316-1320, 2014
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47 2016 Proton irradiation effects on deep level states in Mg-doped p-type GaN grown by ammonia-based molecular beam epitaxy Z Zhang, AR Arehart, ECH Kyle, J Chen, EX Zhang, DM Fleetwood, ...
Applied Physics Letters 106 (2), 2015
44 2015 Hot-carrier degradation in GaN HEMTs due to substitutional iron and its complexes S Mukherjee, Y Puzyrev, J Chen, DM Fleetwood, RD Schrimpf, ...
IEEE Transactions on Electron Devices 63 (4), 1486-1494, 2016
43 2016 Thermal stability of deep level defects induced by high energy proton irradiation in n-type GaN Z Zhang, E Farzana, WY Sun, J Chen, EX Zhang, DM Fleetwood, ...
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38 2016 Total ionizing dose (TID) effects in extremely scaled ultra-thin channel nanowire (NW) gate-all-around (GAA) InGaAs MOSFETs S Ren, M Si, K Ni, X Wan, J Chen, S Chang, X Sun, EX Zhang, RA Reed, ...
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36 2015 Correlation of proton irradiation induced threshold voltage shifts to deep level traps in AlGaN/GaN heterostructures Z Zhang, D Cardwell, A Sasikumar, ECH Kyle, J Chen, EX Zhang, ...
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34 2014 Degradation and annealing effects caused by oxygen in AlGaN/GaN high electron mobility transistors R Jiang, X Shen, J Chen, GX Duan, EX Zhang, DM Fleetwood, ...
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30 2016 Total Ionizing Dose Radiation Effects in Al2 O X Sun, F Xue, J Chen, EX Zhang, S Cui, J Lee, DM Fleetwood, TP Ma
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Gallium Nitride Materials and Devices IX 8986, 120-128, 2014
16 2014 