Residual stress in Si nanocrystals embedded in a SiO2 matrix T Arguirov, T Mchedlidze, M Kittler, R Rölver, B Berghoff, M Först, ...
Applied Physics Letters 89 (5), 2006
84 2006 The Direct Observation of Grown‐in Laser Scattering Tomography Defects in Czochralski Silicon M Nishimura, S Yoshino, H Motoura, S Shimura, T Mchedlidze, T Hikone
Journal of the Electrochemical Society 143 (10), L243, 1996
80 1996 Regular dislocation networks in silicon as a tool for nanostructure devices used in optics, biology, and electronics M Kittler, X Yu, T Mchedlidze, T Arguirov, OF Vyvenko, W Seifert, ...
Small 3 (6), 964-973, 2007
79 2007 Influence of dislocation loops on the near-infrared light emission from silicon diodes T Hoang, J Holleman, P LeMinh, J Schmitz, T Mchedlidze, T Arguirov, ...
IEEE transactions on electron devices 54 (8), 1860-1866, 2007
40 2007 Temperature dependence of conduction by reconstructured dislocations in silicon and nonlinear effects VV Kveder, AE Koshelev, T Mchedlidze, AIS Yu. A. Osip’yan
Zh. Éksp. Teor. Fiz 83 (2), 699, 1989
36 * 1989 Electrical activity of defects induced by oxygen precipitation in Czochralski-grown silicon wafers T Mchedlidze, K Matsumoto, E Asano
Japanese journal of applied physics 38 (6R), 3426, 1999
35 1999 Direct detection of carrier traps in Si solar cells after light‐induced degradation T Mchedlidze, J Weber
physica status solidi (RRL)–Rapid Research Letters 9 (2), 108-110, 2015
34 2015 Effect of laser annealing on crystallinity of the Si layers in Si/SiO2 multiple quantum wells T Arguirov, T Mchedlidze, VD Akhmetov, S Kouteva-Arguirova, M Kittler, ...
Applied Surface Science 254 (4), 1083-1086, 2007
34 2007 Capability of photoluminescence for characterization of multi-crystalline silicon T Mchedlidze, W Seifert, M Kittler, AT Blumenau, B Birkmann, T Mono, ...
Journal of Applied Physics 111 (7), 2012
29 2012 Light-induced solid-to-solid phase transformation in Si nanolayers of T Mchedlidze, T Arguirov, S Kouteva-Arguirova, M Kittler, R Rölver, ...
Physical Review B—Condensed Matter and Materials Physics 77 (16), 161304, 2008
26 2008 Rapid dislocation‐related D1‐photoluminescence imaging of multicrystalline Si wafers at room temperature RP Schmid, D Mankovics, T Arguirov, M Ratzke, T Mchedlidze, M Kittler
physica status solidi (a) 208 (4), 888-892, 2011
25 2011 Electric‐Dipole Spin Resonance of Dislocations in Plastically Deformed p‐Type Silicon M Wattenbach, C Kisielowski‐Kemmerich, H Alexander, VV Kveder, ...
physica status solidi (b) 158 (1), K49-K53, 1990
25 1990 EPR Study of Hydrogen‐Related Radiation‐Induced Shallow Donors in Silicon VP Markevich, VP Markevich, T McHedlidze, M Suezawa, LI Murin
physica status solidi (b) 210 (2), 545-549, 1998
24 1998 Subsurface damage in single diamond tool machined Si wafers T Mchedlidze, I Yonenaga, K Sumino
Materials Science Forum 196, 1841-1846, 1995
20 1995 Defect states in Si containing dislocation nets SA Shevchenko, YA Ossipyan, TR Mchedlidze, EA Steinman, RA Batto
physica status solidi (a) 146 (2), 745-755, 1994
20 1994 Characterization of Deep Levels Introduced by RTA and by Subsequent Anneals in n-Type Silicon D Kot, T Mchedlidze, G Kissinger, W Von Ammon
Ecs Journal of Solid State Science and Technology 2 (1), P9, 2012
19 2012 Influence of electric field on spectral positions of dislocation-related luminescence peaks in silicon: Stark effect T Mchedlidze, T Arguirov, M Kittler, T Hoang, J Holleman, J Schmitz
Applied physics letters 91 (20), 2007
19 2007 Temperature dependence of conduction by reconstructed dislocations in silicon and nonlinear effects VV Kveder, AE Koshelev, TR Mchelidze, YA Osipyan, AI Shalynin
Soviet Physics-JETP 68 (1), 104-108, 1989
19 1989 High-resolution photoinduced transient spectroscopy of electrically active iron-related defects in electron irradiated high-resistivity silicon P Kaminski, R Kozlowski, A Jelenski, T Mchedlidze, M Suezawa
Japanese journal of applied physics 42 (9R), 5415, 2003
18 2003 Regular dislocation networks in silicon. Part I: Structure T Wilhelm, T Mchedlidze, X Yu, T Arguirov, M Kittler, M Reiche
Solid State Phenomena 131, 571-578, 2008
17 2008 
Vitaly KvederИФТТ РАНBestätigte E-Mail-Adresse bei issp.ac.ru
