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Raghuveer Makala
Raghuveer Makala
NC State, Rensselaer Polytechnic Institute, Novellus, SanDisk/WDC, Applied Materials
Bestätigte E-Mail-Adresse bei amat.com
Titel
Zitiert von
Zitiert von
Jahr
Three-dimensional memory device with discrete self-aligned charge storage elements and method of making thereof
M Tsutsumi, K Kajiwara, RS Makala
US Patent 9,991,277, 2018
4212018
Method of making a vertical NAND device using sequential etching of multilayer stacks
RS Makala, YS Lee, J Pachamuthu, J Alsmeier, H Chien
US Patent 8,946,023, 2015
3292015
Bottom electrodes for use with metal oxide resistivity switching layers
DC Sekar, F Kreupl, RS Makala
US Patent 8,354,660, 2013
2752013
Compact three dimensional vertical NAND and method of making thereof
J Alsmeier, RS Makala, X Costa, Y Zhang
US Patent 8,878,278, 2014
2702014
Three dimensional NAND device and method of charge trap layer separation and floating gate formation in the NAND device
RS Makala, J Alsmeier, YS Lee
US Patent 8,658,499, 2014
2272014
Methods of fabricating a three-dimensional non-volatile memory device
J Pachamuthu, J Alsmeier, RS Makala, YS Lee
US Patent 9,230,973, 2016
2122016
Microwave-assisted single-step functionalization and in situ derivatization of carbon nanotubes with gold nanoparticles
MS Raghuveer, S Agrawal, N Bishop, G Ramanath
Chemistry of materials 18 (6), 1390-1393, 2006
1982006
Vertical NAND and method of making thereof using sequential stack etching and self-aligned landing pad
J Liu, Y Zhang, M Chowdhury, RS Makala, J Alsmeier
US Patent 9,698,153, 2017
1752017
Pulsed laser deposition of Bi2Te3-based thermoelectric thin films
RS Makala, K Jagannadham, BC Sales
Journal of Applied physics 94 (6), 3907-3918, 2003
1562003
Three dimensional NAND device with semiconductor, metal or silicide floating gates and method of making thereof
RS Makala, J Alsmeier
US Patent 9,397,093, 2016
1522016
Cobalt-containing conductive layers for control gate electrodes in a memory structure
RS Makala, R Sharangpani, K Sateesh, G Mizuno, N Takeguchi, ...
US Patent 10,128,261, 2018
1432018
High aspect ratio memory hole channel contact formation
J Pachamuthu, J Alsmeier, RS Makala, YS Lee
US Patent 9,023,719, 2015
1392015
High aspect ratio memory hole channel contact formation
J Pachamuthu, J Alsmeier, RS Makala, YS Lee
US Patent 9,460,931, 2016
1202016
Method of selectively depositing floating gate material in a memory device
M Gunji-Yoneoka, A Suyama, K Yamaguchi, H Kinoshita, RS Makala, ...
US Patent 9,768,270, 2017
1192017
Nanomachining carbon nanotubes with ion beams
MS Raghuveer, PG Ganesan, J D'Arcy-Gall, G Ramanath, M Marshall, ...
Applied Physics Letters 84 (22), 4484, 2004
1182004
Method of making a vertical NAND device using a sacrificial layer with air gap and sequential etching of multilayer stacks
Z Lu, K Sateesh, J Kai, RS Makala, YS Lee, J Pachamuthu, J Alsmeier, ...
US Patent 9,449,982, 2016
1142016
Monolithic three-dimensional NAND strings and methods of fabrication thereof
Y Zhang, J Kai, RS Makala, J Liu, M Chowdhury, C Huang, J Alsmeier
US Patent 9,576,975, 2017
1052017
Floating gate ultrahigh density vertical NAND flash memory
RS Makala, Y Zhang, YS Lee, SK Kanakamedala, R Sharangpani, ...
US Patent 9,159,739, 2015
1032015
Three-dimensional memory device containing vertically isolated charge storage regions and method of making thereof
R Sharangpani, RS Makala, S Kanakamedala, F Zhou, S Peri, M Tsutsumi, ...
US Patent 9,812,463, 2017
992017
Defect-induced electrical conductivity increase in individual multiwalled carbon nanotubes
S Agrawal, MS Raghuveer, H Li, G Ramanath
Applied physics letters 90 (19), 2007
942007
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