Luminescence from excited states in strain-induced H Lipsanen, M Sopanen, J Ahopelto
Physical Review B 51 (19), 13868, 1995
236 1995 Self-assembled GaInNAs quantum dots for 1.3 and 1.55 μm emission on GaAs M Sopanen, HP Xin, CW Tu
Applied Physics Letters 76 (8), 994-996, 2000
226 2000 A single-pixel wireless contact lens display AR Lingley, M Ali, Y Liao, R Mirjalili, M Klonner, M Sopanen, S Suihkonen, ...
Journal of Micromechanics and Microengineering 21 (12), 125014, 2011
225 2011 Carrier relaxation dynamics in quantum dots: Scattering mechanisms and state-filling effects S Grosse, JHH Sandmann, G Von Plessen, J Feldmann, H Lipsanen, ...
Physical Review B 55 (7), 4473, 1997
160 1997 Zeeman effect in parabolic quantum dots R Rinaldi, PV Giugno, R Cingolani, H Lipsanen, M Sopanen, J Tulkki, ...
Physical review letters 77 (2), 342, 1996
145 1996 Strain‐induced quantum dots by self‐organized stressors M Sopanen, H Lipsanen, J Ahopelto
Applied physics letters 66 (18), 2364-2366, 1995
128 1995 High quality GaAs nanowires grown on glass substrates V Dhaka, T Haggren, H Jussila, H Jiang, E Kauppinen, T Huhtio, ...
Nano letters 12 (4), 1912-1918, 2012
114 2012 Self‐organized InP islands on (100) GaAs by metalorganic vapor phase epitaxy M Sopanen, H Lipsanen, J Ahopelto
Applied physics letters 67 (25), 3768-3770, 1995
110 1995 Observation of defect complexes containing Ga vacancies in GaAsN J Toivonen, T Hakkarainen, M Sopanen, H Lipsanen, J Oila, K Saarinen
Applied Physics Letters 82 (1), 40-42, 2003
103 2003 Photocatalytic degradation of dyes by CdS microspheres under near UV and blue LED radiation E Repo, S Rengaraj, S Pulkka, E Castangnoli, S Suihkonen, M Sopanen, ...
Separation and Purification Technology 120, 206-214, 2013
97 2013 Temperature dependence of carrier relaxation in strain-induced quantum dots M Brasken, M Lindberg, M Sopanen, H Lipsanen, J Tulkki
Physical Review B 58 (24), R15993, 1998
96 1998 Optical properties of quantum dots induced by self-assembled stressors, in Optics of Quantum Dots and Wires J Tulkki, H Lipsanen, M Sopanen
Artec House, 2004
78 2004 High nitrogen composition GaAsN by atmospheric pressure metalorganic vapor-phase epitaxy J Toivonen, T Hakkarainen, M Sopanen, H Lipsanen
Journal of crystal growth 221 (1-4), 456-460, 2000
77 2000 Low energy electron beam induced vacancy activation in GaN H Nykänen, S Suihkonen, L Kilanski, M Sopanen, F Tuomisto
Applied Physics Letters 100 (12), 2012
71 2012 Self-organized InAs islands on (100) InP by metalorganic vapor-phase epitaxy M Taskinen, M Sopanen, H Lipsanen, J Tulkki, T Tuomi, J Ahopelto
Surface science 376 (1-3), 60-68, 1997
65 1997 GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride M Bosund, P Mattila, A Aierken, T Hakkarainen, H Koskenvaara, ...
Applied Surface Science 256 (24), 7434-7437, 2010
63 2010 Selective growth of InGaAs on nanoscale InP islands J Ahopelto, H Lipsanen, M Sopanen, T Koljonen, HEM Niemi
Applied physics letters 65 (13), 1662-1664, 1994
58 1994 Atomic layer etching of gallium nitride (0001) C Kauppinen, SA Khan, J Sundqvist, DB Suyatin, S Suihkonen, ...
Journal of Vacuum Science & Technology A 35 (6), 2017
57 2017 Grass-like alumina with low refractive index for scalable, broadband, omnidirectional antireflection coatings on glass using atomic layer deposition C Kauppinen, K Isakov, M Sopanen
ACS applied materials & interfaces 9 (17), 15038-15043, 2017
57 2017 Control of the morphology of InGaN/GaN quantum wells grown by metalorganic chemical vapor deposition S Suihkonen, T Lang, O Svensk, J Sormunen, PT Törmä, M Sopanen, ...
Journal of crystal growth 300 (2), 324-329, 2007
49 2007 