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Sami Alghamdi
Sami Alghamdi
Associate Professor at King Abdulaziz University - PhD, Purdue University
Bestätigte E-Mail-Adresse bei kau.edu.sa - Startseite
Titel
Zitiert von
Zitiert von
Jahr
High-Performance Depletion/Enhancement-ode -Ga2O3 on Insulator (GOOI) Field-Effect Transistors With Record Drain Currents of 600/450 mA/mm
H Zhou, M Si, S Alghamdi, G Qiu, L Yang, DY Peide
IEEE Electron Device Letters 38 (1), 103-106, 2016
3232016
Al2O3/ -Ga2O3(-201) Interface Improvement Through Piranha Pretreatment and Postdeposition Annealing
H Zhou, S Alghmadi, M Si, G Qiu, DY Peide
IEEE Electron Device Letters 37 (11), 1411-1414, 2016
1512016
High-performance InAlN/GaN MOSHEMTs enabled by atomic layer epitaxy MgCaO as gate dielectric
H Zhou, X Lou, NJ Conrad, M Si, H Wu, S Alghamdi, S Guo, RG Gordon, ...
IEEE Electron Device Letters 37 (5), 556-559, 2016
602016
Epitaxial Growth of MgxCa1–xO on GaN by Atomic Layer Deposition
X Lou, H Zhou, SB Kim, S Alghamdi, X Gong, J Feng, X Wang, PD Ye, ...
Nano letters 16 (12), 7650-7654, 2016
432016
Solar-Blind UV Photodetector Based on Atomic Layer-Deposited Cu2O and Nanomembrane β-Ga2O3 pn Oxide Heterojunction
H Bae, A Charnas, X Sun, J Noh, M Si, W Chung, G Qiu, X Lyu, ...
ACS omega 4 (24), 20756-20761, 2019
402019
Ultraviolet Light-Based Current–Voltage Method for Simultaneous Extraction of Donor- and Acceptor-Like Interface Traps in -Ga2O3 FETs
H Bae, J Noh, S Alghamdi, M Si, DY Peide
IEEE Electron Device Letters 39 (11), 1708-1711, 2018
252018
Demonstration of the β-Ga₂O₃ MOS-JFETs With Suppressed Gate Leakage Current and Large Gate Swing
C Wang, Q Yan, C Su, S Alghamdi, E Ghandourah, Z Liu, X Feng, ...
IEEE Electron Device Letters 44 (3), 380-383, 2023
192023
Recent Advanced Ultra‐Wide Bandgap β‐Ga2O3 Material and Device Technologies
S Sun, C Wang, S Alghamdi, H Zhou, Y Hao, J Zhang
Advanced Electronic Materials 11 (1), 2300844, 2025
172025
Proposal and Simulation of Ga2O3 MOSFET With PN Heterojunction Structure for High-Performance E-Mode Operation
W Lei, K Dang, H Zhou, J Zhang, C Wang, Q Xin, S Alghamdi, Z Liu, ...
IEEE Transactions on Electron Devices 69 (7), 3617-3622, 2022
172022
β-Ga2O3 Lateral Schottky Barrier Diodes with > 10 kV Breakdown Voltage and Anode Engineering
C Wang, Q Yan, C Zhang, C Su, K Zhang, S Sun, Z Liu, W Zhang, ...
IEEE Electron Device Letters, 2023
152023
Synergistic multi-functional N-doped carbon Nanocage@ CNT/ZnMn2O4/Ti3C2 MXene: Powering battery, supercapacitor, and catalyzing hydrogen evolution
AOM Alzahrani, H Hassan, MW Iqbal, AO Alosaimi, S Alghamdi, ...
International Journal of Hydrogen Energy 66, 415-429, 2024
132024
Low frequency noise in MOS2 negative capacitance field-effect transistor
S Alghamdi, M Si, L Yang, DY Peide
2018 IEEE International Reliability Physics Symposium (IRPS), P-TX. 1-1-P-TX …, 2018
132018
Single pulse charge pumping measurements on GaN MOS-HEMTs: Fast and reliable extraction of interface traps density
S Alghamdi, M Si, H Bae, H Zhou, DY Peide
IEEE Transactions on Electron Devices 67 (2), 444-448, 2020
122020
X-shaped exposed core highly sensitive plasmonic sensor for cancer cell detection
A Rahman, MS Islam, M Alharbi, MH Pappu, IM Mehedi, S Alghamdi, ...
Optical and Quantum Electronics 56 (5), 718, 2024
92024
Surface plasmon resonance voltage sensor based on a liquid crystal-infiltrated hollow fiber
MS Islam, MA Mollah, AF Alkhateeb, W Zouch, S Alghamdi
Optical Materials Express 12 (12), 4630-4642, 2022
72022
Low frequency noise in MOS
S Alghamdi, M Si, L Yang, PD Ye
Proc. IEEE Int. Rel. Phys. Symp.(IRPS), 1-5, 0
6
High index core flat fiber surface plasmon resonance bio-sensor
AF Alkhateeb, MS Islam, MY Ali, RJ Usha, S Tasnim, S Alghamdi, ...
Applied Optics 61 (20), 5885-5893, 2022
42022
Rice husk-derived P-doped CNTs on Cu–ZnO/NPC as a binder-free electrodes for aqueous supercapacitors and oxygen evolution
AOM Alzahrani, H Hassan, MW Iqbal, AO Alosaimi, S Alghamdi, ...
Inorganic Chemistry Communications 168, 112860, 2024
32024
Real-time energy management simulation for enhanced integration of renewable energy resources in DC microgrids
H Hadi H. Awaji, AA Alhussainy, AH Alobaidi, S Alghamdi, S Alghamdi, ...
Frontiers in Energy Research 12, 1458115, 2024
32024
1.56 kV/30 A vertical β-Ga2O3 Schottky barrier diodes with composite edge terminations
Y Feng, H Zhou, S Alghamdi, H Fang, X Zhang, Y Chen, G Tian, S Wasly, ...
Science China Information Sciences 68 (2), 129401, 2025
22025
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