Artikel mit Open-Access-Mandaten - Martin KittlerWeitere Informationen
Nicht verfügbar: 4
Direct band gap luminescence from Ge on Si pin diodes
E Kasper, M Oehme, J Werner, T Aguirov, M Kittler
Frontiers of Optoelectronics 5, 256-260, 2012
Mandate: Deutsche Forschungsgemeinschaft
Luminescence of strained Ge on GeSn virtual substrate grown on Si (001)
B Schwartz, M Oehme, R Koerner, S Bechler, J Schulze, M Kittler
Silicon Photonics XII 10108, 60-66, 2017
Mandate: Deutsche Forschungsgemeinschaft
Comparison of EL emitted by LEDs on Si substrates containing Ge and Ge/GeSn MQW as active layers
B Schwartz, T Arguirov, M Kittler, M Oehme, K Kostecki, E Kasper, ...
Silicon Photonics X 9367, 298-305, 2015
Mandate: Deutsche Forschungsgemeinschaft
Temperature dependence of luminescence from dislocated ge on si substrate
B Schwartz, M Reiche, M Kittler
Materials Today: Proceedings 5 (6), 14712-14721, 2018
Mandate: Deutsche Forschungsgemeinschaft
Verfügbar: 12
GeSn heterojunction LEDs on Si substrates
M Oehme, K Kostecki, T Arguirov, G Mussler, K Ye, M Gollhofer, M Schmid, ...
IEEE photonics technology letters 26 (2), 187-189, 2013
Mandate: Deutsche Forschungsgemeinschaft
GeSn/Ge multiquantum well photodetectors on Si substrates
M Oehme, D Widmann, K Kostecki, P Zaumseil, B Schwartz, M Gollhofer, ...
Optics letters 39 (16), 4711-4714, 2014
Mandate: Deutsche Forschungsgemeinschaft
Electroluminescence of GeSn/Ge MQW LEDs on Si substrate
B Schwartz, M Oehme, K Kostecki, D Widmann, M Gollhofer, R Koerner, ...
Optics letters 40 (13), 3209-3212, 2015
Mandate: Deutsche Forschungsgemeinschaft
Electroluminescence of germanium LEDs on silicon: Influence of antimony doping
B Schwartz, A Klossek, M Kittler, M Oehme, E Kasper, J Schulze
physica status solidi (c) 11 (11‐12), 1686-1691, 2014
Mandate: Deutsche Forschungsgemeinschaft
Room Temperature Direct Band Gap Emission from Ge p‐i‐n Heterojunction Photodiodes
E Kasper, M Oehme, T Arguirov, J Werner, M Kittler, J Schulze
Advances in optoelectronics 2012 (1), 916275, 2012
Mandate: Deutsche Forschungsgemeinschaft
Luminescence from germanium and germanium on silicon
T Arguirov, M Kittler, M Oehme, NV Abrosimov, OF Vyvenko, E Kasper, ...
Solid State Phenomena 205, 383-393, 2014
Mandate: Deutsche Forschungsgemeinschaft
Transport of charge carriers along dislocations in Si and Ge
M Kittler, M Reiche, B Schwartz, H Uebensee, H Kosina, Z Stanojevic, ...
physica status solidi (a) 216 (17), 1900287, 2019
Mandate: Deutsche Forschungsgemeinschaft
Light from germanium tin heterostructures on silicon
E Kasper, M Kittler, M Oehme, T Arguirov
Optoelectronic Integrated Circuits XV 8628, 70-80, 2013
Mandate: Deutsche Forschungsgemeinschaft
Analysis of EL emitted by LEDs on Si substrates containing GeSn/Ge multi quantum wells as active layers
B Schwartz, P Saring, T Arguirov, M Oehme, K Kostecki, E Kasper, ...
Solid State Phenomena 242, 361-367, 2016
Mandate: Deutsche Forschungsgemeinschaft
Influence of strain, donor concentration, carrier confinement, and dislocation density on the efficiency of luminescence of Ge‐based structures on Si substrate
B Schwartz, M Reiche, M Kittler
physica status solidi c 14 (7), 1700018, 2017
Mandate: Deutsche Forschungsgemeinschaft
Combined DLTS/MCTS investigations of deep electrical levels of regular dislocation networks in silicon
M Trushin, A Varlamov, A Loshachenko, O Vyvenko, M Kittler
Journal of Physics: Conference Series 1190 (1), 012005, 2019
Mandate: Deutsche Forschungsgemeinschaft
Ge and GeSn light emitters on Si
M Oehme, M Gollhofer, K Kostecki, R Koerner, S Bechler, D Widmann, ...
Solid State Phenomena 242, 353-360, 2016
Mandate: Deutsche Forschungsgemeinschaft
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