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Tomás González
Tomás González
Professor of Electronics - University of Salamanca (Spain)
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Titel
Zitiert von
Zitiert von
Jahr
Voltage tuneable terahertz emission from a ballistic nanometer InGaAs∕ InAlAs transistor
J Lusakowski, W Knap, N Dyakonova, L Varani, J Mateos, T Gonzalez, ...
Journal of applied physics 97 (6), 2005
1842005
Monte Carlo simulator for the design optimization of low-noise HEMTs
J Mateos, T González, D Pardo, V Hoël, A Cappy
IEEE Transactions on Electron Devices 47 (10), 1950-1956, 2000
1332000
Microwave detection at 110 GHz by nanowires with broken symmetry
C Balocco, AM Song, M Åberg, A Forchel, T González, J Mateos, ...
Nano Letters 5 (7), 1423-1427, 2005
1232005
Improved Monte Carlo algorithm for the simulation of/spl delta/-doped AlInAs/GaInAs HEMTs
J Mateos, T González, D Pardo, V Hoel, H Happy, A Cappy
IEEE transactions on electron devices 47 (1), 250-253, 2000
1222000
Physical models of ohmic contact for Monte Carlo device simulation
T González, D Pardo
Solid-State Electronics 39 (4), 555-562, 1996
1121996
Operation and high-frequency performance of nanoscale unipolar rectifying diodes
J Mateos, BG Vasallo, D Pardo, T González
Applied Physics Letters 86 (21), 2005
1102005
Ballistic nanodevices for terahertz data processing: Monte Carlo simulations
J Mateos, BG Vasallo, D Pardo, T González, JS Galloo, Y Roelens, ...
Nanotechnology 14 (2), 117, 2003
1062003
Microscopic modeling of nonlinear transport in ballistic nanodevices
J Mateos, BG Vasallo, D Pardo, T González, JS Galloo, S Bollaert, ...
IEEE Transactions on Electron Devices 50 (9), 1897-1905, 2003
1052003
Microscopic simulation of electronic noise in semiconductor materials and devices
L Varani, L Reggiani, T Kuhn, T Gonzalez, D Pardo
IEEE transactions on electron devices 41 (11), 1916-1925, 1994
1031994
Terahertz Gunn-like oscillations in InGaAs/InAlAs planar diodes
S Pérez, T González, D Pardo, J Mateos
Journal of applied physics 103 (9), 2008
952008
Universality of the 1/3 shot-noise suppression factor in nondegenerate diffusive conductors
T González, C González, J Mateos, D Pardo, L Reggiani, OM Bulashenko, ...
Physical review letters 80 (13), 2901, 1998
931998
Comparison between the dynamic performance of double-and single-gate AlInAs/InGaAs HEMTs
BG Vasallo, N Wichmann, S Bollaert, Y Roelens, A Cappy, T González, ...
IEEE Transactions on Electron Devices 54 (11), 2815-2822, 2007
892007
Experimental demonstration of direct terahertz detection at room-temperature in AlGaN/GaN asymmetric nanochannels
P Sangaré, G Ducournau, B Grimbert, V Brandli, M Faucher, C Gaquière, ...
Journal of Applied Physics 113 (3), 2013
792013
Monte Carlo determination of the intrinsic small-signal equivalent circuit of MESFET's
T Gonzalez, D Pardo
IEEE Transactions on Electron Devices 42 (4), 605-611, 1995
781995
Effect of the T-gate on the performance of recessed HEMTs. A Monte Carlo analysis
J Mateos, T González, D Pardo, V Hoel, A Cappy
Semiconductor science and technology 14 (9), 864, 1999
721999
Influence of the surface charge on the operation of ballistic T-branch junctions: a self-consistent model for Monte Carlo simulations
I Iñiguez-De-La-Torre, J Mateos, T González, D Pardo, JS Galloo, ...
Semiconductor science and technology 22 (6), 663, 2007
672007
Nonlinear effects in T-branch junctions
J Mateos, BG Vasallo, D Pardo, T González, E Pichonat, JS Galloo, ...
IEEE Electron Device Letters 25 (5), 235-237, 2004
652004
Searching for THz Gunn oscillations in GaN planar nanodiodes
A Iniguez-De-La-Torre, I Íñiguez-De-La-Torre, J Mateos, T González, ...
Journal of Applied Physics 111 (11), 2012
632012
Electron transport in InP under high electric field conditions
TG Sanchez, JEV Perez, PMG Conde, DP Collantes
Semiconductor science and technology 7 (1), 31, 1992
531992
Design optimization of AlInAs-GaInAs HEMTs for high-frequency applications
JM Lopez, T González, D Pardo, S Bollaert, T Parenty, A Cappy
IEEE transactions on Electron Devices 51 (4), 521-528, 2004
512004
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