Artikel mit Open-Access-Mandaten - Tomás GonzálezWeitere Informationen
Nicht verfügbar: 14
Terahertz electronic devices
F Aniel, G Auton, D Cumming, M Feiginov, S Gebert, T González, C Li, ...
Springer Handbook of Semiconductor Devices, 807-849, 2022
Mandate: European Commission, Government of Spain
Optimization of the epilayer design for the fabrication of doped GaN planar Gunn diodes
S Garcia-Sanchez, I Iniguez-de-la-Torre, S Perez, T Gonzalez, J Mateos
IEEE Transactions on Electron Devices 69 (2), 514-520, 2021
Mandate: Government of Spain
Time-domain Monte Carlo simulations of resonant-circuit operation of GaN Gunn diodes
S García, BG Vasallo, J Mateos, T González
2013 Spanish Conference on Electron Devices, 79-82, 2013
Mandate: Government of Spain
Comparison of GaN and InGaAs high electron mobility transistors as zero-bias microwave detectors
G Paz-Martínez, I Íñiguez-De-La-Torre, H Sánchez-Martín, ...
Journal of Applied Physics 132 (13), 2022
Mandate: Government of Spain
Trap-assisted enhancement of the responsivity in asymmetric planar GaN-based nanodiodes at low temperature
E Pérez-Martín, H Sánchez-Martín, T González, J Mateos, ...
Nanotechnology 34 (32), 325201, 2023
Mandate: Government of Spain
Ballistic deflection transistor: Geometry dependence and boolean operations
I Iñiguez-de-la-Torre, J Mateos, T González, V Kaushal, M Margala
2013 Spanish Conference on Electron Devices, 187-190, 2013
Mandate: Government of Spain
Noise in terahertz detectors based on semiconductor nanochannels
JF Millithaler, I Iñiguez-de-la-Torre, T González, J Mateos, P Sangaré, ...
2013 22nd International Conference on Noise and Fluctuations (ICNF), 1-4, 2013
Mandate: Government of Spain
Modeling and study of two-BDT-nanostructure based sequential logic circuits
P Marthi, SR Reza, N Hossain, JF Millithaler, M Margala, ...
Proceedings of the 26th edition on Great Lakes Symposium on VLSI, 393-396, 2016
Mandate: US National Science Foundation
Noise and terahertz rectification in semiconductor diodes and transistors
J Mateos, I Iñiguez-de-la-Torre, T González
2011 21st International Conference on Noise and Fluctuations, 16-21, 2011
Mandate: Government of Spain
Role of impact ionization and self-consistent tunnel injection in Schottky-barrier diodes operating under strong reverse-bias conditions
T González, B Orfao, S Pérez, J Mateos, BG Vasallo
Applied Physics Express 16 (2), 024003, 2023
Mandate: Government of Spain
200 GHz communication system using unipolar InAs THz rectifiers
G Ducournau, A Westlund, P Sangare, C Gaquière, PA Nilsson, ...
2013 38th International Conference on Infrared, Millimeter, and Terahertz …, 2013
Mandate: Government of Spain
Accurate predictions of terahertz noise in ultra-small devices: A limiting factor for their practical application?
X Oriols, A Benali, SM Yaro, G Albareda, J Mateos, T González
2013 22nd International Conference on Noise and Fluctuations (ICNF), 1-4, 2013
Mandate: Government of Spain
Isolated-gate InAs/AlSb HEMTs: A Monte Carlo study
H Rodilla, T González, M Malmkvist, E Lefebvre, G Moschetti, J Grahn, ...
2010 22nd International Conference on Indium Phosphide and Related Materials …, 2010
Mandate: Swedish Research Council
Comparison of noise characteristics of GaAs and GaN Schottky diodes for millimeter and submillimeter applications
D Pardo, S Pérez, J Grajal, J Mateos, T González
2011 21st International Conference on Noise and Fluctuations, 106-109, 2011
Mandate: Government of Spain
Verfügbar: 80
Experimental demonstration of direct terahertz detection at room-temperature in AlGaN/GaN asymmetric nanochannels
P Sangaré, G Ducournau, B Grimbert, V Brandli, M Faucher, C Gaquière, ...
Journal of Applied Physics 113 (3), 2013
Mandate: Government of Spain
Searching for THz Gunn oscillations in GaN planar nanodiodes
A Iniguez-De-La-Torre, I Íñiguez-De-La-Torre, J Mateos, T González, ...
Journal of Applied Physics 111 (11), 2012
Mandate: Government of Spain
Comparative Monte Carlo analysis of InP-and GaN-based gunn diodes
S García, S Pérez, I Íñiguez-De-La-Torre, J Mateos, T González
Journal of Applied Physics 115 (4), 2014
Mandate: Government of Spain
Room temperature direct and heterodyne detection of 0.28–0.69-THz waves based on GaN 2-DEG unipolar nanochannels
C Daher, J Torres, I Iñiguez-De-La-Torre, P Nouvel, L Varani, P Sangaré, ...
IEEE Transactions on Electron Devices 63 (1), 353-359, 2015
Mandate: European Commission, Government of Spain
Impact of substrate and thermal boundary resistance on the performance of AlGaN/GaN HEMTs analyzed by means of electro-thermal Monte Carlo simulations
S García, I Íñiguez-de-la-Torre, J Mateos, T González, S Pérez
Semiconductor Science and Technology 31 (6), 065005, 2016
Mandate: Government of Spain
Optimized V-shape design of GaN nanodiodes for the generation of Gunn oscillations
JF Millithaler, I Íñiguez-de-la-Torre, A Iñiguez-de-la-Torre, T González, ...
Applied Physics Letters 104 (7), 2014
Mandate: Government of Spain
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