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Gregor Koblmüller
Gregor Koblmüller
Walter Schottky Institut and Physics Department, Technical University of Munich
Bestätigte E-Mail-Adresse bei wsi.tum.de - Startseite
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Zitiert von
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Lasing from individual GaAs-AlGaAs core-shell nanowires up to room temperature
B Mayer, D Rudolph, J Schnell, S Morkötter, J Winnerl, J Treu, K Müller, ...
Nature communications 4 (1), 2931, 2013
2802013
In-polar InN grown by plasma-assisted molecular beam epitaxy
CS Gallinat, G Koblmüller, JS Brown, S Bernardis, JS Speck, GD Chern, ...
Applied physics letters 89 (3), 2006
2012006
Growth kinetics in position-controlled and catalyst-free InAs nanowire arrays on Si (111) grown by selective area molecular beam epitaxy
S Hertenberger, D Rudolph, M Bichler, JJ Finley, G Abstreiter, ...
Journal of Applied Physics 108 (11), 2010
1982010
A growth diagram for plasma-assisted molecular beam epitaxy of In-face InN
CS Gallinat, G Koblmüller, JS Brown, JS Speck
Journal of Applied Physics 102 (6), 2007
1702007
Monolithically integrated high-β nanowire lasers on silicon
B Mayer, L Janker, B Loitsch, J Treu, T Kostenbader, S Lichtmannecker, ...
Nano letters 16 (1), 152-156, 2016
1672016
Growth diagram and morphologies of AlN thin films grown by molecular beam epitaxy
G Koblmueller, R Averbeck, L Geelhaar, H Riechert, W Hösler, P Pongratz
Journal of Applied Physics 93 (12), 9591-9596, 2003
1632003
Direct observation of a noncatalytic growth regime for GaAs nanowires
D Rudolph, S Hertenberger, S Bolte, W Paosangthong, D Spirkoska, ...
Nano Letters 11 (9), 3848-3854, 2011
1602011
Spontaneous alloy composition ordering in GaAs-AlGaAs core–shell nanowires
D Rudolph, S Funk, M Döblinger, S Morkötter, S Hertenberger, ...
Nano letters 13 (4), 1522-1527, 2013
1542013
Self-induced growth of vertical free-standing InAs nanowires on Si (111) by molecular beam epitaxy
G Koblmüller, S Hertenberger, K Vizbaras, M Bichler, F Bao, JP Zhang, ...
Nanotechnology 21 (36), 365602, 2010
1522010
In situ GaN decomposition analysis by quadrupole mass spectrometry and reflection high-energy electron diffraction
S Fernández-Garrido, G Koblmüller, E Calleja, JS Speck
Journal of applied physics 104 (3), 2008
1362008
Optimization of the surface and structural quality of N-face InN grown by molecular beam epitaxy
G Koblmüller, CS Gallinat, S Bernardis, JS Speck, GD Chern, ...
Applied physics letters 89 (7), 2006
1292006
Direct observation of different equilibrium Ga adlayer coverages and their desorption kinetics on GaN (0001) and surfaces
G Koblmüller, R Averbeck, H Riechert, P Pongratz
Physical Review B 69 (3), 035325, 2004
1272004
Thermal conductivity of GaAs nanowires studied by micro-Raman spectroscopy combined with laser heating
M Soini, I Zardo, E Uccelli, S Funk, G Koblmüller, A Fontcuberta i Morral, ...
Applied Physics Letters 97 (26), 2010
1232010
In situ investigation of growth modes during plasma-assisted molecular beam epitaxy of (0001) GaN
G Koblmüller, S Fernández-Garrido, E Calleja, JS Speck
Applied Physics Letters 91 (16), 2007
1202007
Surface kinetics and thermal instability of N-face InN grown by plasma-assisted molecular beam epitaxy
G Koblmüller, CS Gallinat, JS Speck
Journal of applied physics 101 (8), 2007
1132007
Excitation wavelength dependence of terahertz emission from InN and InAs
GD Chern, ED Readinger, H Shen, M Wraback, CS Gallinat, G Koblmüller, ...
Applied physics letters 89 (14), 2006
1032006
Dislocation-induced thermal transport anisotropy in single-crystal group-III nitride films
B Sun, G Haunschild, C Polanco, J Ju, L Lindsay, G Koblmüller, YK Koh
Nature materials 18 (2), 136-140, 2019
1002019
Effect of charged dislocation scattering on electrical and electrothermal transport in -type InN
N Miller, EE Haller, G Koblmüller, C Gallinat, JS Speck, WJ Schaff, ...
Physical Review B—Condensed Matter and Materials Physics 84 (7), 075315, 2011
962011
Enhanced luminescence properties of InAs–InAsP core–shell nanowires
J Treu, M Bormann, H Schmeiduch, M Döblinger, S Morkötter, ...
Nano letters 13 (12), 6070-6077, 2013
922013
High electron mobility GaN grown under N-rich conditions by plasma-assisted molecular beam epitaxy
G Koblmüller, F Wu, T Mates, JS Speck, S Fernández-Garrido, E Calleja
Applied Physics Letters 91 (22), 2007
912007
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