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Christian Lavoie
Christian Lavoie
Manager Advanced Characterization, IBM T.J. Watson Research Center, Yorktown Heights, NY
Bestätigte E-Mail-Adresse bei us.ibm.com
Titel
Zitiert von
Zitiert von
Jahr
Ambipolar electrical transport in semiconducting single-wall carbon nanotubes
R Martel, V Derycke, C Lavoie, I Appenzeller, KK Chan, J Tersoff, ...
Phys. Rev. Lett. 87, 256805, 2001
10812001
Self-aligned process for nanotube/nanowire FETs
P Avouris, RA Carruthers, J Chen, CGMM Detavernier, C Lavoie, ...
US Patent 8,119,466, 2012
5462012
Towards implementation of a nickel silicide process for CMOS technologies
C Lavoie, FM d’Heurle, C Detavernier, C Cabral Jr
Microelectronic Engineering 70 (2-4), 144-157, 2003
5192003
Sharp reduction of contact resistivities by effective Schottky barrier lowering with silicides as diffusion sources
Z Zhang, F Pagette, C D'emic, B Yang, C Lavoie, Y Zhu, M Hopstaken, ...
IEEE Electron Device Letters 31 (7), 731-733, 2010
3112010
Thin film reaction of transition metals with germanium
S Gaudet, C Detavernier, AJ Kellock, P Desjardins, C Lavoie
Journal of Vacuum Science & Technology A 24 (3), 474-485, 2006
2872006
Metal-gate FinFET and fully-depleted SOI devices using total gate silicidation
J Kedzierski, E Nowak, T Kanarsky, Y Zhang, D Boyd, R Carruthers, ...
Digest. International Electron Devices Meeting,, 247-250, 2002
2822002
High-/Metal-Gate Fully Depleted SOI CMOS With Single-Silicide Schottky Source/Drain With Sub-30-nm Gate Length
MH Khater, Z Zhang, J Cai, C Lavoie, C D'Emic, Q Yang, B Yang, ...
IEEE Electron Device Letters 31 (4), 275-277, 2010
2642010
Field-emission SEM imaging of compositional and doping layer semiconductor superlattices
DD Perovic, MR Castell, A Howie, C Lavoie, T Tiedje, JSW Cole
Ultramicroscopy 58 (1), 104-113, 1995
2341995
An off-normal fibre-like texture in thin films on single-crystal substrates
C Detavernier, AS Özcan, J Jordan-Sweet, EA Stach, J Tersoff, FM Ross, ...
Nature 426 (6967), 641-645, 2003
2302003
In-situ X-ray diffraction study of metal induced crystallization of amorphous silicon
W Knaepen, C Detavernier, RL Van Meirhaeghe, JJ Sweet, C Lavoie
Thin Solid Films 516 (15), 4946-4952, 2008
1942008
Diffusion barrier properties of transition metal thin films grown by plasma-enhanced atomic-layer deposition
H Kim, C Cabral Jr, C Lavoie, SM Rossnagel
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2002
1762002
Effects of additive elements on the phase formation and morphological stability of nickel monosilicide films
C Lavoie, C Detavernier, C Cabral Jr, FM d’Heurle, AJ Kellock, ...
Microelectronic engineering 83 (11-12), 2042-2054, 2006
1542006
High-temperature degradation of NiSi films: Agglomeration versus NiSi2 nucleation
D Deduytsche, C Detavernier, RL Van Meirhaeghe, C Lavoie
Journal of applied physics 98 (3), 2005
1382005
In situ x-ray diffraction study of metal induced crystallization of amorphous germanium
W Knaepen, S Gaudet, C Detavernier, RL Van Meirhaeghe, JJ Sweet, ...
Journal of Applied Physics 105 (8), 2009
1262009
FinFET performance advantage at 22nm: An AC perspective
M Guillorn, J Chang, A Bryant, N Fuller, O Dokumaci, X Wang, J Newbury, ...
2008 Symposium on VLSI Technology, 12-13, 2008
1232008
Influence of Pt addition on the texture of NiSi on Si (001)
C Detavernier, C Lavoie
applied physics letters 84 (18), 3549-3551, 2004
1212004
Optical apparatus and method for measuring temperature of a substrate material with a temperature dependent band gap
SR Johnson, C Lavoie, MK Nissen, JT Tiedje
US Patent 5,388,909, 1995
1201995
Two gates are better than one [double-gate MOSFET process]
PM Solomon, KW Guarini, Y Zhang, K Chan, EC Jones, GM Cohen, ...
IEEE circuits and devices magazine 19 (1), 48-62, 2003
1162003
Semiconductor substrate temperature measurement by diffuse reflectance spectroscopy in molecular beam epitaxy
SR Johnson, C Lavoie, T Tiedje, JA Mackenzie
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1993
1161993
Triple-self-aligned, planar double-gate MOSFETs: devices and circuits
KW Guarini, PM Solomon, Y Zhang, KK Chan, EC Jones, GM Cohen, ...
International Electron Devices Meeting. Technical Digest (Cat. No. 01CH37224 …, 2001
1052001
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